Abstract
The oxynitridation of Si(100) by various sequences of NO, N2O and O2 exposures have been examined using high resolution medium energy ion scattering (MEIS) to determine accurate N and O concentrations and depth profiles. The results demonstrate that: 1) NO-produced oxynitride films have a higher concentration of N in them relative to N2O films, 2) N, once incorporated, significantly retards the rate of continued oxidation (or nitridation) in proportion to the N concentration, and 3) concurrent to nitridation near the interface, under certain conditions N2O exposure may remove N from a film in the overlayer beyond the near-interfacial (∼1.5nm) region, whereas NO is much less effective at removing N.
| Original language | English |
|---|---|
| Pages (from-to) | 29-32 |
| Number of pages | 4 |
| Journal | Microelectronic Engineering |
| Volume | 36 |
| Issue number | 1-4 |
| Publication status | Published - Jun 1997 |
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ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
- Atomic and Molecular Physics, and Optics
Cite this
Compositional and mechanistic aspects of ultrathin oxynitride film growth on Si(100). / Lu, H. C.; Gusev, E. P.; Gustafsson, T.; Brasen, D.; Green, M. L.; Garfunkel, Eric.
In: Microelectronic Engineering, Vol. 36, No. 1-4, 06.1997, p. 29-32.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Compositional and mechanistic aspects of ultrathin oxynitride film growth on Si(100)
AU - Lu, H. C.
AU - Gusev, E. P.
AU - Gustafsson, T.
AU - Brasen, D.
AU - Green, M. L.
AU - Garfunkel, Eric
PY - 1997/6
Y1 - 1997/6
N2 - The oxynitridation of Si(100) by various sequences of NO, N2O and O2 exposures have been examined using high resolution medium energy ion scattering (MEIS) to determine accurate N and O concentrations and depth profiles. The results demonstrate that: 1) NO-produced oxynitride films have a higher concentration of N in them relative to N2O films, 2) N, once incorporated, significantly retards the rate of continued oxidation (or nitridation) in proportion to the N concentration, and 3) concurrent to nitridation near the interface, under certain conditions N2O exposure may remove N from a film in the overlayer beyond the near-interfacial (∼1.5nm) region, whereas NO is much less effective at removing N.
AB - The oxynitridation of Si(100) by various sequences of NO, N2O and O2 exposures have been examined using high resolution medium energy ion scattering (MEIS) to determine accurate N and O concentrations and depth profiles. The results demonstrate that: 1) NO-produced oxynitride films have a higher concentration of N in them relative to N2O films, 2) N, once incorporated, significantly retards the rate of continued oxidation (or nitridation) in proportion to the N concentration, and 3) concurrent to nitridation near the interface, under certain conditions N2O exposure may remove N from a film in the overlayer beyond the near-interfacial (∼1.5nm) region, whereas NO is much less effective at removing N.
UR - http://www.scopus.com/inward/record.url?scp=0031150218&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031150218&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0031150218
VL - 36
SP - 29
EP - 32
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
IS - 1-4
ER -