Compositional and mechanistic aspects of ultrathin oxynitride film growth on Si(100)

H. C. Lu; E. P. Gusev; T. Gustafsson; D. Brasen; M. L. Green; Eric Garfunkel

Compositional and mechanistic aspects of ultrathin oxynitride film growth on Si(100)

H. C. Lu, E. P. Gusev, T. Gustafsson, D. Brasen, M. L. Green, Eric Garfunkel

Rutgers University

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The oxynitridation of Si(100) by various sequences of NO, N₂O and O₂ exposures have been examined using high resolution medium energy ion scattering (MEIS) to determine accurate N and O concentrations and depth profiles. The results demonstrate that: 1) NO-produced oxynitride films have a higher concentration of N in them relative to N₂O films, 2) N, once incorporated, significantly retards the rate of continued oxidation (or nitridation) in proportion to the N concentration, and 3) concurrent to nitridation near the interface, under certain conditions N₂O exposure may remove N from a film in the overlayer beyond the near-interfacial (∼1.5nm) region, whereas NO is much less effective at removing N.

Original language	English
Pages (from-to)	29-32
Number of pages	4
Journal	Microelectronic Engineering
Volume	36
Issue number	1-4
Publication status	Published - Jun 1997

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Surfaces, Coatings and Films
Atomic and Molecular Physics, and Optics

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title = "Compositional and mechanistic aspects of ultrathin oxynitride film growth on Si(100)",

abstract = "The oxynitridation of Si(100) by various sequences of NO, N2O and O2 exposures have been examined using high resolution medium energy ion scattering (MEIS) to determine accurate N and O concentrations and depth profiles. The results demonstrate that: 1) NO-produced oxynitride films have a higher concentration of N in them relative to N2O films, 2) N, once incorporated, significantly retards the rate of continued oxidation (or nitridation) in proportion to the N concentration, and 3) concurrent to nitridation near the interface, under certain conditions N2O exposure may remove N from a film in the overlayer beyond the near-interfacial (∼1.5nm) region, whereas NO is much less effective at removing N.",

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T1 - Compositional and mechanistic aspects of ultrathin oxynitride film growth on Si(100)

AU - Lu, H. C.

AU - Gusev, E. P.

AU - Gustafsson, T.

AU - Brasen, D.

AU - Green, M. L.

AU - Garfunkel, Eric

PY - 1997/6

Y1 - 1997/6

N2 - The oxynitridation of Si(100) by various sequences of NO, N2O and O2 exposures have been examined using high resolution medium energy ion scattering (MEIS) to determine accurate N and O concentrations and depth profiles. The results demonstrate that: 1) NO-produced oxynitride films have a higher concentration of N in them relative to N2O films, 2) N, once incorporated, significantly retards the rate of continued oxidation (or nitridation) in proportion to the N concentration, and 3) concurrent to nitridation near the interface, under certain conditions N2O exposure may remove N from a film in the overlayer beyond the near-interfacial (∼1.5nm) region, whereas NO is much less effective at removing N.

AB - The oxynitridation of Si(100) by various sequences of NO, N2O and O2 exposures have been examined using high resolution medium energy ion scattering (MEIS) to determine accurate N and O concentrations and depth profiles. The results demonstrate that: 1) NO-produced oxynitride films have a higher concentration of N in them relative to N2O films, 2) N, once incorporated, significantly retards the rate of continued oxidation (or nitridation) in proportion to the N concentration, and 3) concurrent to nitridation near the interface, under certain conditions N2O exposure may remove N from a film in the overlayer beyond the near-interfacial (∼1.5nm) region, whereas NO is much less effective at removing N.

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