Compositional and mechanistic aspects of ultrathin oxynitride film growth on Si(100)

H. C. Lu, E. P. Gusev, T. Gustafsson, D. Brasen, M. L. Green, Eric Garfunkel

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


The oxynitridation of Si(100) by various sequences of NO, N2O and O2 exposures have been examined using high resolution medium energy ion scattering (MEIS) to determine accurate N and O concentrations and depth profiles. The results demonstrate that: 1) NO-produced oxynitride films have a higher concentration of N in them relative to N2O films, 2) N, once incorporated, significantly retards the rate of continued oxidation (or nitridation) in proportion to the N concentration, and 3) concurrent to nitridation near the interface, under certain conditions N2O exposure may remove N from a film in the overlayer beyond the near-interfacial (∼1.5nm) region, whereas NO is much less effective at removing N.

Original languageEnglish
Pages (from-to)29-32
Number of pages4
JournalMicroelectronic Engineering
Issue number1-4
Publication statusPublished - Jun 1997

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics

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