Abstract
The oxynitridation of Si(100) by various sequences of NO, N2O and O2 exposures have been examined using high resolution medium energy ion scattering (MEIS) to determine accurate N and O concentrations and depth profiles. The results demonstrate that: 1) NO-produced oxynitride films have a higher concentration of N in them relative to N2O films, 2) N, once incorporated, significantly retards the rate of continued oxidation (or nitridation) in proportion to the N concentration, and 3) concurrent to nitridation near the interface, under certain conditions N2O exposure may remove N from a film in the overlayer beyond the near-interfacial (∼1.5nm) region, whereas NO is much less effective at removing N.
Original language | English |
---|---|
Pages (from-to) | 29-32 |
Number of pages | 4 |
Journal | Microelectronic Engineering |
Volume | 36 |
Issue number | 1-4 |
Publication status | Published - Jun 1997 |
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
- Atomic and Molecular Physics, and Optics