Compositional and structural modifications in ternary bismuth chalcogenides and their thermoelectric properties

D. Y. Chung, M. A. Lane, J. R. Ireland, P. W. Brazis, C. R. Kannewurf, Mercouri G Kanatzidis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Based on the versatile combination of PbQ- and Bi2Q3-type (Q = S, Se, Te) fragments, we explored new compounds in the Pb/Bi/Se ternary system. The new class of compounds, Pb5Bi6Se14, Pb5Pb12Se23, and PbBi8Se13 are homologues with different combination of alternating Bi2Se3- and PbSe-type layers. α- and β-Pb6Bi2Se9 were obtained in different synthetic conditions and the former is isostructural to heyrovskyite (Pb6Bi2S9) while the latter is a NaCl-type cubic phase. Pb5Bi6Se14 shows a power factor of 11.2 μW/cm·K2 with electrical conductivity of 657 S/cm and thermopower of -131 μV/K at 271 K. The most significant characteristic of this material is the extremely low thermal conductivity of less than 1.0 W/m·K at room temperature. On the basis of these properties, a preliminary doping study for Pb5Bi6Se14 with Sn, Sb, and SbBr3 as dopants was undertaken and the results are presented in this report.

Original languageEnglish
Title of host publicationProceedings - IEEE International Symposium on Circuits and Systems
Volume4
Publication statusPublished - 2001
EventIEEE International Symposium on Circuits and Systems (ISCAS 2001) - Sydney, NSW, Australia
Duration: May 6 2001May 9 2001

Other

OtherIEEE International Symposium on Circuits and Systems (ISCAS 2001)
CountryAustralia
CitySydney, NSW
Period5/6/015/9/01

Fingerprint

Chalcogenides
Bismuth
Doping (additives)
Thermoelectric power
Ternary systems
Thermal conductivity
Temperature
Electric Conductivity
lead selenide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Chung, D. Y., Lane, M. A., Ireland, J. R., Brazis, P. W., Kannewurf, C. R., & Kanatzidis, M. G. (2001). Compositional and structural modifications in ternary bismuth chalcogenides and their thermoelectric properties. In Proceedings - IEEE International Symposium on Circuits and Systems (Vol. 4)

Compositional and structural modifications in ternary bismuth chalcogenides and their thermoelectric properties. / Chung, D. Y.; Lane, M. A.; Ireland, J. R.; Brazis, P. W.; Kannewurf, C. R.; Kanatzidis, Mercouri G.

Proceedings - IEEE International Symposium on Circuits and Systems. Vol. 4 2001.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chung, DY, Lane, MA, Ireland, JR, Brazis, PW, Kannewurf, CR & Kanatzidis, MG 2001, Compositional and structural modifications in ternary bismuth chalcogenides and their thermoelectric properties. in Proceedings - IEEE International Symposium on Circuits and Systems. vol. 4, IEEE International Symposium on Circuits and Systems (ISCAS 2001), Sydney, NSW, Australia, 5/6/01.
Chung DY, Lane MA, Ireland JR, Brazis PW, Kannewurf CR, Kanatzidis MG. Compositional and structural modifications in ternary bismuth chalcogenides and their thermoelectric properties. In Proceedings - IEEE International Symposium on Circuits and Systems. Vol. 4. 2001
Chung, D. Y. ; Lane, M. A. ; Ireland, J. R. ; Brazis, P. W. ; Kannewurf, C. R. ; Kanatzidis, Mercouri G. / Compositional and structural modifications in ternary bismuth chalcogenides and their thermoelectric properties. Proceedings - IEEE International Symposium on Circuits and Systems. Vol. 4 2001.
@inproceedings{d856bebb9fb247268b8ff1d57f065acd,
title = "Compositional and structural modifications in ternary bismuth chalcogenides and their thermoelectric properties",
abstract = "Based on the versatile combination of PbQ- and Bi2Q3-type (Q = S, Se, Te) fragments, we explored new compounds in the Pb/Bi/Se ternary system. The new class of compounds, Pb5Bi6Se14, Pb5Pb12Se23, and PbBi8Se13 are homologues with different combination of alternating Bi2Se3- and PbSe-type layers. α- and β-Pb6Bi2Se9 were obtained in different synthetic conditions and the former is isostructural to heyrovskyite (Pb6Bi2S9) while the latter is a NaCl-type cubic phase. Pb5Bi6Se14 shows a power factor of 11.2 μW/cm·K2 with electrical conductivity of 657 S/cm and thermopower of -131 μV/K at 271 K. The most significant characteristic of this material is the extremely low thermal conductivity of less than 1.0 W/m·K at room temperature. On the basis of these properties, a preliminary doping study for Pb5Bi6Se14 with Sn, Sb, and SbBr3 as dopants was undertaken and the results are presented in this report.",
author = "Chung, {D. Y.} and Lane, {M. A.} and Ireland, {J. R.} and Brazis, {P. W.} and Kannewurf, {C. R.} and Kanatzidis, {Mercouri G}",
year = "2001",
language = "English",
volume = "4",
booktitle = "Proceedings - IEEE International Symposium on Circuits and Systems",

}

TY - GEN

T1 - Compositional and structural modifications in ternary bismuth chalcogenides and their thermoelectric properties

AU - Chung, D. Y.

AU - Lane, M. A.

AU - Ireland, J. R.

AU - Brazis, P. W.

AU - Kannewurf, C. R.

AU - Kanatzidis, Mercouri G

PY - 2001

Y1 - 2001

N2 - Based on the versatile combination of PbQ- and Bi2Q3-type (Q = S, Se, Te) fragments, we explored new compounds in the Pb/Bi/Se ternary system. The new class of compounds, Pb5Bi6Se14, Pb5Pb12Se23, and PbBi8Se13 are homologues with different combination of alternating Bi2Se3- and PbSe-type layers. α- and β-Pb6Bi2Se9 were obtained in different synthetic conditions and the former is isostructural to heyrovskyite (Pb6Bi2S9) while the latter is a NaCl-type cubic phase. Pb5Bi6Se14 shows a power factor of 11.2 μW/cm·K2 with electrical conductivity of 657 S/cm and thermopower of -131 μV/K at 271 K. The most significant characteristic of this material is the extremely low thermal conductivity of less than 1.0 W/m·K at room temperature. On the basis of these properties, a preliminary doping study for Pb5Bi6Se14 with Sn, Sb, and SbBr3 as dopants was undertaken and the results are presented in this report.

AB - Based on the versatile combination of PbQ- and Bi2Q3-type (Q = S, Se, Te) fragments, we explored new compounds in the Pb/Bi/Se ternary system. The new class of compounds, Pb5Bi6Se14, Pb5Pb12Se23, and PbBi8Se13 are homologues with different combination of alternating Bi2Se3- and PbSe-type layers. α- and β-Pb6Bi2Se9 were obtained in different synthetic conditions and the former is isostructural to heyrovskyite (Pb6Bi2S9) while the latter is a NaCl-type cubic phase. Pb5Bi6Se14 shows a power factor of 11.2 μW/cm·K2 with electrical conductivity of 657 S/cm and thermopower of -131 μV/K at 271 K. The most significant characteristic of this material is the extremely low thermal conductivity of less than 1.0 W/m·K at room temperature. On the basis of these properties, a preliminary doping study for Pb5Bi6Se14 with Sn, Sb, and SbBr3 as dopants was undertaken and the results are presented in this report.

UR - http://www.scopus.com/inward/record.url?scp=0035018969&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035018969&partnerID=8YFLogxK

M3 - Conference contribution

VL - 4

BT - Proceedings - IEEE International Symposium on Circuits and Systems

ER -