Computational band-structure engineering of III-V semiconductor alloys

Clint B. Geller, Walter Wolf, Silvia Picozzi, Alessandra Continenza, Ryoji Asahi, Wolfgang Mannstadt, Arthur J Freeman, Erich Wimmer

Research output: Contribution to journalArticle

87 Citations (Scopus)

Abstract

The calculations for energy-band structures and excitation energies of binary semiconductors using an all-electron screened exchange method were presented. The screen exchange method was implemented in full-potential linearized augmented plane-wave (FLAPW) method. Screen exchange method showed better performance for calculating conduction-band effective masses. The sX-FLAPW method showed improved approach for the description of fundamental band gaps, effective masses and higher-lying states.

Original languageEnglish
Pages (from-to)368-370
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number3
DOIs
Publication statusPublished - Jul 16 2001

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plane waves
engineering
energy bands
conduction bands
excitation
electrons
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Geller, C. B., Wolf, W., Picozzi, S., Continenza, A., Asahi, R., Mannstadt, W., ... Wimmer, E. (2001). Computational band-structure engineering of III-V semiconductor alloys. Applied Physics Letters, 79(3), 368-370. https://doi.org/10.1063/1.1383282

Computational band-structure engineering of III-V semiconductor alloys. / Geller, Clint B.; Wolf, Walter; Picozzi, Silvia; Continenza, Alessandra; Asahi, Ryoji; Mannstadt, Wolfgang; Freeman, Arthur J; Wimmer, Erich.

In: Applied Physics Letters, Vol. 79, No. 3, 16.07.2001, p. 368-370.

Research output: Contribution to journalArticle

Geller, CB, Wolf, W, Picozzi, S, Continenza, A, Asahi, R, Mannstadt, W, Freeman, AJ & Wimmer, E 2001, 'Computational band-structure engineering of III-V semiconductor alloys', Applied Physics Letters, vol. 79, no. 3, pp. 368-370. https://doi.org/10.1063/1.1383282
Geller CB, Wolf W, Picozzi S, Continenza A, Asahi R, Mannstadt W et al. Computational band-structure engineering of III-V semiconductor alloys. Applied Physics Letters. 2001 Jul 16;79(3):368-370. https://doi.org/10.1063/1.1383282
Geller, Clint B. ; Wolf, Walter ; Picozzi, Silvia ; Continenza, Alessandra ; Asahi, Ryoji ; Mannstadt, Wolfgang ; Freeman, Arthur J ; Wimmer, Erich. / Computational band-structure engineering of III-V semiconductor alloys. In: Applied Physics Letters. 2001 ; Vol. 79, No. 3. pp. 368-370.
@article{cb42661426f24b41942f67a0908d3015,
title = "Computational band-structure engineering of III-V semiconductor alloys",
abstract = "The calculations for energy-band structures and excitation energies of binary semiconductors using an all-electron screened exchange method were presented. The screen exchange method was implemented in full-potential linearized augmented plane-wave (FLAPW) method. Screen exchange method showed better performance for calculating conduction-band effective masses. The sX-FLAPW method showed improved approach for the description of fundamental band gaps, effective masses and higher-lying states.",
author = "Geller, {Clint B.} and Walter Wolf and Silvia Picozzi and Alessandra Continenza and Ryoji Asahi and Wolfgang Mannstadt and Freeman, {Arthur J} and Erich Wimmer",
year = "2001",
month = "7",
day = "16",
doi = "10.1063/1.1383282",
language = "English",
volume = "79",
pages = "368--370",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "3",

}

TY - JOUR

T1 - Computational band-structure engineering of III-V semiconductor alloys

AU - Geller, Clint B.

AU - Wolf, Walter

AU - Picozzi, Silvia

AU - Continenza, Alessandra

AU - Asahi, Ryoji

AU - Mannstadt, Wolfgang

AU - Freeman, Arthur J

AU - Wimmer, Erich

PY - 2001/7/16

Y1 - 2001/7/16

N2 - The calculations for energy-band structures and excitation energies of binary semiconductors using an all-electron screened exchange method were presented. The screen exchange method was implemented in full-potential linearized augmented plane-wave (FLAPW) method. Screen exchange method showed better performance for calculating conduction-band effective masses. The sX-FLAPW method showed improved approach for the description of fundamental band gaps, effective masses and higher-lying states.

AB - The calculations for energy-band structures and excitation energies of binary semiconductors using an all-electron screened exchange method were presented. The screen exchange method was implemented in full-potential linearized augmented plane-wave (FLAPW) method. Screen exchange method showed better performance for calculating conduction-band effective masses. The sX-FLAPW method showed improved approach for the description of fundamental band gaps, effective masses and higher-lying states.

UR - http://www.scopus.com/inward/record.url?scp=0035898421&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035898421&partnerID=8YFLogxK

U2 - 10.1063/1.1383282

DO - 10.1063/1.1383282

M3 - Article

AN - SCOPUS:0035898421

VL - 79

SP - 368

EP - 370

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 3

ER -