Conductive atomic force microscope nanopatterning of hydrogen-passivated silicon in inert organic solvents

C. Reagan Kinser, Matthew J. Schmitz, Mark C Hersam

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

Ambient liquid phase atomic force microscope (AFM) techniques for nanopatterning organic molecules on silicon through direct Si-C bonds rely on reactions that are in direct competition with spurious oxidation. We study the effectiveness of an inert hydrophobic organic solvent at suppressing oxidation of hydrogen-passivated silicon under ambient conditions. Nanometer scale features were fabricated on an H:Si(111) substrate using a conductive AFM in hexadecane. The patterned features show chemical and kinetic behavior consistent with field induced oxidation (FIO) in air. The mechanism for FIO in hexadecane is discussed.

Original languageEnglish
Pages (from-to)91-95
Number of pages5
JournalNano Letters
Volume5
Issue number1
DOIs
Publication statusPublished - Jan 2005

Fingerprint

Silicon
Organic solvents
Hydrogen
Microscopes
microscopes
Oxidation
oxidation
silicon
hydrogen
liquid phases
Molecules
Kinetics
air
kinetics
Liquids
Substrates
Air
molecules
n-hexadecane

ASJC Scopus subject areas

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Chemistry (miscellaneous)

Cite this

Conductive atomic force microscope nanopatterning of hydrogen-passivated silicon in inert organic solvents. / Kinser, C. Reagan; Schmitz, Matthew J.; Hersam, Mark C.

In: Nano Letters, Vol. 5, No. 1, 01.2005, p. 91-95.

Research output: Contribution to journalArticle

@article{5949f0890cbd4fc1ad604847f7e90671,
title = "Conductive atomic force microscope nanopatterning of hydrogen-passivated silicon in inert organic solvents",
abstract = "Ambient liquid phase atomic force microscope (AFM) techniques for nanopatterning organic molecules on silicon through direct Si-C bonds rely on reactions that are in direct competition with spurious oxidation. We study the effectiveness of an inert hydrophobic organic solvent at suppressing oxidation of hydrogen-passivated silicon under ambient conditions. Nanometer scale features were fabricated on an H:Si(111) substrate using a conductive AFM in hexadecane. The patterned features show chemical and kinetic behavior consistent with field induced oxidation (FIO) in air. The mechanism for FIO in hexadecane is discussed.",
author = "Kinser, {C. Reagan} and Schmitz, {Matthew J.} and Hersam, {Mark C}",
year = "2005",
month = "1",
doi = "10.1021/nl048275q",
language = "English",
volume = "5",
pages = "91--95",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "1",

}

TY - JOUR

T1 - Conductive atomic force microscope nanopatterning of hydrogen-passivated silicon in inert organic solvents

AU - Kinser, C. Reagan

AU - Schmitz, Matthew J.

AU - Hersam, Mark C

PY - 2005/1

Y1 - 2005/1

N2 - Ambient liquid phase atomic force microscope (AFM) techniques for nanopatterning organic molecules on silicon through direct Si-C bonds rely on reactions that are in direct competition with spurious oxidation. We study the effectiveness of an inert hydrophobic organic solvent at suppressing oxidation of hydrogen-passivated silicon under ambient conditions. Nanometer scale features were fabricated on an H:Si(111) substrate using a conductive AFM in hexadecane. The patterned features show chemical and kinetic behavior consistent with field induced oxidation (FIO) in air. The mechanism for FIO in hexadecane is discussed.

AB - Ambient liquid phase atomic force microscope (AFM) techniques for nanopatterning organic molecules on silicon through direct Si-C bonds rely on reactions that are in direct competition with spurious oxidation. We study the effectiveness of an inert hydrophobic organic solvent at suppressing oxidation of hydrogen-passivated silicon under ambient conditions. Nanometer scale features were fabricated on an H:Si(111) substrate using a conductive AFM in hexadecane. The patterned features show chemical and kinetic behavior consistent with field induced oxidation (FIO) in air. The mechanism for FIO in hexadecane is discussed.

UR - http://www.scopus.com/inward/record.url?scp=12844250030&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=12844250030&partnerID=8YFLogxK

U2 - 10.1021/nl048275q

DO - 10.1021/nl048275q

M3 - Article

C2 - 15792419

AN - SCOPUS:12844250030

VL - 5

SP - 91

EP - 95

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 1

ER -