Confirmation of the Dominant Defect Mechanism in Amorphous In-Zn-O Through the Application of in Situ Brouwer Analysis

Stephanie L. Moffitt, Alexander U. Adler, Thomas Gennett, David S. Ginley, John D. Perkins, Thomas O Mason

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The dominant point defect mechanism of amorphous (a-) indium zinc oxide (IZO) was probed through in situ electrical characterization of sputtered a-IZO thin films in response to changes in oxygen partial pressure (pO2) at 300°C. The results yielded a power law dependence of conductivity (σ) versus pO2 of ∼1/6. This experimental method, known as Brouwer analysis, confirms doubly-charged oxygen vacancies as the dominant defect species in a-IZO. The success of this study suggests that Brouwer analysis is a viable method for studying the defect mechanisms of amorphous oxides.

Original languageEnglish
Pages (from-to)2099-2103
Number of pages5
JournalJournal of the American Ceramic Society
Volume98
Issue number7
DOIs
Publication statusPublished - Jul 1 2015

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Zinc Oxide
Indium
Zinc oxide
Defects
Point defects
Oxygen vacancies
Partial pressure
Oxides
Oxide films
Oxygen
Thin films

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

Cite this

Confirmation of the Dominant Defect Mechanism in Amorphous In-Zn-O Through the Application of in Situ Brouwer Analysis. / Moffitt, Stephanie L.; Adler, Alexander U.; Gennett, Thomas; Ginley, David S.; Perkins, John D.; Mason, Thomas O.

In: Journal of the American Ceramic Society, Vol. 98, No. 7, 01.07.2015, p. 2099-2103.

Research output: Contribution to journalArticle

Moffitt, Stephanie L. ; Adler, Alexander U. ; Gennett, Thomas ; Ginley, David S. ; Perkins, John D. ; Mason, Thomas O. / Confirmation of the Dominant Defect Mechanism in Amorphous In-Zn-O Through the Application of in Situ Brouwer Analysis. In: Journal of the American Ceramic Society. 2015 ; Vol. 98, No. 7. pp. 2099-2103.
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