Confirmation of the Dominant Defect Mechanism in Amorphous In-Zn-O Through the Application of in Situ Brouwer Analysis

Stephanie L. Moffitt, Alexander U. Adler, Thomas Gennett, David S. Ginley, John D. Perkins, Thomas O Mason

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5 Citations (Scopus)


The dominant point defect mechanism of amorphous (a-) indium zinc oxide (IZO) was probed through in situ electrical characterization of sputtered a-IZO thin films in response to changes in oxygen partial pressure (pO2) at 300°C. The results yielded a power law dependence of conductivity (σ) versus pO2 of ∼1/6. This experimental method, known as Brouwer analysis, confirms doubly-charged oxygen vacancies as the dominant defect species in a-IZO. The success of this study suggests that Brouwer analysis is a viable method for studying the defect mechanisms of amorphous oxides.

Original languageEnglish
Pages (from-to)2099-2103
Number of pages5
JournalJournal of the American Ceramic Society
Issue number7
Publication statusPublished - Jul 1 2015


ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

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