TY - JOUR
T1 - Conformal SnO: X heterojunction coatings for stabilized photoelectrochemical water oxidation using arrays of silicon microcones
AU - Moreno-Hernandez, Ivan A.
AU - Yalamanchili, Sisir
AU - Fu, Harold J.
AU - Atwater, Harry A.
AU - Brunschwig, Bruce S.
AU - Lewis, Nathan S.
N1 - Funding Information:
This work was supported through the Office of Science of the U.S. Department of Energy (DOE) under award no. DESC0004993 to the Joint Center for Articial Photosynthesis, a DOE Energy Innovation Hub, and in part by the National Science Foundation (NSF) and the Department of Energy (DOE) under NSF CA No. EEC-1041895. Any opinions, ndings and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reect those of NSF or DOE. Fabrication was performed in Kavli Nanoscience Institute (KNI) at Caltech, and we thank KNI staff for their assistance during fabrication. I. M. H acknowledges a National Science Foundation Graduate Research Fellowship under Grant No. DGE-1144469. We thank C. Garland for assistance with transmission-electron microscopy measurements.
PY - 2020/5/14
Y1 - 2020/5/14
N2 - The efficiency of photoelectrodes towards fuel-forming reactions is strongly affected by surface-based charge recombination, charge-transfer losses, and parasitic light absorption by electrocatalysts. We report a protective tin oxide (SnOx) layer formed by atomic-layer deposition that limits surface recombination at n-Si/SnOx heterojunctions and produces ∼620 mV of photovoltage on planar n-Si photoanodes. The SnOx layer can be deposited conformally on high aspect-ratio three-dimensional structures such as Si microcone arrays. Atomic-level control of the SnOx thickness enabled highly conductive contacts to electrolytes, allowing the direct electrodeposition of NiFeOOH, CoOx, and IrOx electrocatalysts for photoelectrochemical water oxidation with minimal parasitic absorption losses. SnOx-coated n-Si microcone arrays coupled to electrodeposited catalysts exhibited photocurrent densities of ∼42 mA cm-2 and a photovoltage of ∼490 mV under 100 mW cm-2 of simulated solar illumination. The SnOx layer can be integrated with amorphous TiO2 to form a protective SnOx/TiO2 bilayer that exhibits the beneficial properties of both materials. Photoanodes coated with SnOx/TiO2 exhibited a similar photovoltage to that of SnOx-coated photoanodes, and showed >480 h of stable photocurrent for planar photoelectrodes and >140 h of stable photocurrent for n-Si microcone arrays under continuous simulated solar illumination in alkaline electrolytes.
AB - The efficiency of photoelectrodes towards fuel-forming reactions is strongly affected by surface-based charge recombination, charge-transfer losses, and parasitic light absorption by electrocatalysts. We report a protective tin oxide (SnOx) layer formed by atomic-layer deposition that limits surface recombination at n-Si/SnOx heterojunctions and produces ∼620 mV of photovoltage on planar n-Si photoanodes. The SnOx layer can be deposited conformally on high aspect-ratio three-dimensional structures such as Si microcone arrays. Atomic-level control of the SnOx thickness enabled highly conductive contacts to electrolytes, allowing the direct electrodeposition of NiFeOOH, CoOx, and IrOx electrocatalysts for photoelectrochemical water oxidation with minimal parasitic absorption losses. SnOx-coated n-Si microcone arrays coupled to electrodeposited catalysts exhibited photocurrent densities of ∼42 mA cm-2 and a photovoltage of ∼490 mV under 100 mW cm-2 of simulated solar illumination. The SnOx layer can be integrated with amorphous TiO2 to form a protective SnOx/TiO2 bilayer that exhibits the beneficial properties of both materials. Photoanodes coated with SnOx/TiO2 exhibited a similar photovoltage to that of SnOx-coated photoanodes, and showed >480 h of stable photocurrent for planar photoelectrodes and >140 h of stable photocurrent for n-Si microcone arrays under continuous simulated solar illumination in alkaline electrolytes.
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U2 - 10.1039/d0ta01144d
DO - 10.1039/d0ta01144d
M3 - Article
AN - SCOPUS:85085985536
VL - 8
SP - 9292
EP - 9301
JO - Journal of Materials Chemistry A
JF - Journal of Materials Chemistry A
SN - 2050-7488
IS - 18
ER -