Abstract
The purpose of this study is to experimentally determine the effect of electron injection on the minority carrier lifetime in Gallium Nitride. Earlier studies of electron injection in GaN have provided an indirect proof of lifetime enhancement through the increase of minority carrier diffusion length and the decrease in the cathodoluminescence intensity. These changes in the minority transport properties, caused by electron injection, are brought forth through defect and trap levels in the bandgap. Furthermore, a thorough discussion of the electron injection model and role of these trap levels is presented.
| Original language | English |
|---|---|
| Title of host publication | NATO Science for Peace and Security Series B |
| Subtitle of host publication | Physics and Biophysics |
| Publisher | Springer |
| Pages | 109-117 |
| Number of pages | 9 |
| DOIs | |
| Publication status | Published - 2020 |
Publication series
| Name | NATO Science for Peace and Security Series B: Physics and Biophysics |
|---|---|
| ISSN (Print) | 1874-6500 |
| ISSN (Electronic) | 1874-6535 |
Keywords
- Electron injection
- Gallium nitride
- Lifetime
- Minority carrier transport
ASJC Scopus subject areas
- Biotechnology
- Biophysics
- Physics and Astronomy(all)
- Electrical and Electronic Engineering
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Cite this
Modak, S., Chernyak, L., Lubomirsky, I., & Khodorov, S. (2020). Continuous and Time-Resolved Cathodoluminescence Studies of Electron Injection Induced Effects in Gallium Nitride. In NATO Science for Peace and Security Series B: Physics and Biophysics (pp. 109-117). (NATO Science for Peace and Security Series B: Physics and Biophysics). Springer. https://doi.org/10.1007/978-94-024-2021-0_11