Continuously Tuning Electronic Properties of Few-Layer Molybdenum Ditelluride with in Situ Aluminum Modification toward Ultrahigh Gain Complementary Inverters

Dianyu Qi, Cheng Han, Ximing Rong, Xiu Wen Zhang, Manish Chhowalla, Andrew T.S. Wee, Wenjing Zhang

Research output: Contribution to journalArticle

Abstract

Semiconducting molybdenum ditelluride (2H-MoTe2), a two-dimensional (2D) transition metal dichalcogenide, has attracted extensive research attention due to its favorable physical properties for future electronic devices, such as appropriate bandgap, ambipolar transport characteristic, and good chemical stability. The rational tuning of its electronic properties is a key point to achieve MoTe2-based complementary electronic and optoelectronic devices. Herein, we demonstrate the dynamic and effective control of the electronic properties of few-layer MoTe2, through the in situ surface modification with aluminum (Al) adatoms, with a view toward high-performance complementary inverter devices. MoTe2 is found to be significantly electron doped by Al, exhibiting a continuous transport transition from p-dominated ambipolar to n-type unipolar with enhanced electron mobility. Using a spatially controlled Al doping technique, both p- and n-channels are established on a single MoTe2 nanosheet, which gives complementary inverters with a record-high gain of ∼195, which stands out in the 2D family of materials due to the balanced p- and n-transport in Al-modified MoTe2. Our studies coupled with the tunable nature of in situ modification enable MoTe2 to be a promising candidate for high-performance complementary electronics.

Original languageEnglish
Pages (from-to)9464-9472
Number of pages9
JournalACS nano
Volume13
Issue number8
DOIs
Publication statusPublished - Aug 27 2019

Fingerprint

inverters
Molybdenum
Aluminum
Electronic properties
molybdenum
Tuning
tuning
aluminum
electronics
Adatoms
Nanosheets
Electron mobility
Chemical stability
dynamic control
Optoelectronic devices
Transition metals
Surface treatment
optoelectronic devices
high gain
Energy gap

Keywords

  • aluminum
  • bandgap tuning
  • complementary inverter
  • electron doping
  • MoTe

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Continuously Tuning Electronic Properties of Few-Layer Molybdenum Ditelluride with in Situ Aluminum Modification toward Ultrahigh Gain Complementary Inverters. / Qi, Dianyu; Han, Cheng; Rong, Ximing; Zhang, Xiu Wen; Chhowalla, Manish; Wee, Andrew T.S.; Zhang, Wenjing.

In: ACS nano, Vol. 13, No. 8, 27.08.2019, p. 9464-9472.

Research output: Contribution to journalArticle

Qi, Dianyu ; Han, Cheng ; Rong, Ximing ; Zhang, Xiu Wen ; Chhowalla, Manish ; Wee, Andrew T.S. ; Zhang, Wenjing. / Continuously Tuning Electronic Properties of Few-Layer Molybdenum Ditelluride with in Situ Aluminum Modification toward Ultrahigh Gain Complementary Inverters. In: ACS nano. 2019 ; Vol. 13, No. 8. pp. 9464-9472.
@article{5e758c69249b43ccac502873f5991b3f,
title = "Continuously Tuning Electronic Properties of Few-Layer Molybdenum Ditelluride with in Situ Aluminum Modification toward Ultrahigh Gain Complementary Inverters",
abstract = "Semiconducting molybdenum ditelluride (2H-MoTe2), a two-dimensional (2D) transition metal dichalcogenide, has attracted extensive research attention due to its favorable physical properties for future electronic devices, such as appropriate bandgap, ambipolar transport characteristic, and good chemical stability. The rational tuning of its electronic properties is a key point to achieve MoTe2-based complementary electronic and optoelectronic devices. Herein, we demonstrate the dynamic and effective control of the electronic properties of few-layer MoTe2, through the in situ surface modification with aluminum (Al) adatoms, with a view toward high-performance complementary inverter devices. MoTe2 is found to be significantly electron doped by Al, exhibiting a continuous transport transition from p-dominated ambipolar to n-type unipolar with enhanced electron mobility. Using a spatially controlled Al doping technique, both p- and n-channels are established on a single MoTe2 nanosheet, which gives complementary inverters with a record-high gain of ∼195, which stands out in the 2D family of materials due to the balanced p- and n-transport in Al-modified MoTe2. Our studies coupled with the tunable nature of in situ modification enable MoTe2 to be a promising candidate for high-performance complementary electronics.",
keywords = "aluminum, bandgap tuning, complementary inverter, electron doping, MoTe",
author = "Dianyu Qi and Cheng Han and Ximing Rong and Zhang, {Xiu Wen} and Manish Chhowalla and Wee, {Andrew T.S.} and Wenjing Zhang",
year = "2019",
month = "8",
day = "27",
doi = "10.1021/acsnano.9b04416",
language = "English",
volume = "13",
pages = "9464--9472",
journal = "ACS Nano",
issn = "1936-0851",
publisher = "American Chemical Society",
number = "8",

}

TY - JOUR

T1 - Continuously Tuning Electronic Properties of Few-Layer Molybdenum Ditelluride with in Situ Aluminum Modification toward Ultrahigh Gain Complementary Inverters

AU - Qi, Dianyu

AU - Han, Cheng

AU - Rong, Ximing

AU - Zhang, Xiu Wen

AU - Chhowalla, Manish

AU - Wee, Andrew T.S.

AU - Zhang, Wenjing

PY - 2019/8/27

Y1 - 2019/8/27

N2 - Semiconducting molybdenum ditelluride (2H-MoTe2), a two-dimensional (2D) transition metal dichalcogenide, has attracted extensive research attention due to its favorable physical properties for future electronic devices, such as appropriate bandgap, ambipolar transport characteristic, and good chemical stability. The rational tuning of its electronic properties is a key point to achieve MoTe2-based complementary electronic and optoelectronic devices. Herein, we demonstrate the dynamic and effective control of the electronic properties of few-layer MoTe2, through the in situ surface modification with aluminum (Al) adatoms, with a view toward high-performance complementary inverter devices. MoTe2 is found to be significantly electron doped by Al, exhibiting a continuous transport transition from p-dominated ambipolar to n-type unipolar with enhanced electron mobility. Using a spatially controlled Al doping technique, both p- and n-channels are established on a single MoTe2 nanosheet, which gives complementary inverters with a record-high gain of ∼195, which stands out in the 2D family of materials due to the balanced p- and n-transport in Al-modified MoTe2. Our studies coupled with the tunable nature of in situ modification enable MoTe2 to be a promising candidate for high-performance complementary electronics.

AB - Semiconducting molybdenum ditelluride (2H-MoTe2), a two-dimensional (2D) transition metal dichalcogenide, has attracted extensive research attention due to its favorable physical properties for future electronic devices, such as appropriate bandgap, ambipolar transport characteristic, and good chemical stability. The rational tuning of its electronic properties is a key point to achieve MoTe2-based complementary electronic and optoelectronic devices. Herein, we demonstrate the dynamic and effective control of the electronic properties of few-layer MoTe2, through the in situ surface modification with aluminum (Al) adatoms, with a view toward high-performance complementary inverter devices. MoTe2 is found to be significantly electron doped by Al, exhibiting a continuous transport transition from p-dominated ambipolar to n-type unipolar with enhanced electron mobility. Using a spatially controlled Al doping technique, both p- and n-channels are established on a single MoTe2 nanosheet, which gives complementary inverters with a record-high gain of ∼195, which stands out in the 2D family of materials due to the balanced p- and n-transport in Al-modified MoTe2. Our studies coupled with the tunable nature of in situ modification enable MoTe2 to be a promising candidate for high-performance complementary electronics.

KW - aluminum

KW - bandgap tuning

KW - complementary inverter

KW - electron doping

KW - MoTe

UR - http://www.scopus.com/inward/record.url?scp=85071713440&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85071713440&partnerID=8YFLogxK

U2 - 10.1021/acsnano.9b04416

DO - 10.1021/acsnano.9b04416

M3 - Article

VL - 13

SP - 9464

EP - 9472

JO - ACS Nano

JF - ACS Nano

SN - 1936-0851

IS - 8

ER -