TY - JOUR
T1 - Continuously Tuning Electronic Properties of Few-Layer Molybdenum Ditelluride with in Situ Aluminum Modification toward Ultrahigh Gain Complementary Inverters
AU - Qi, Dianyu
AU - Han, Cheng
AU - Rong, Ximing
AU - Zhang, Xiu Wen
AU - Chhowalla, Manish
AU - Wee, Andrew T.S.
AU - Zhang, Wenjing
N1 - Funding Information:
This work was supported by the National Science Foundation of China (No. 51472164), the 1000 Talents Program for Young Scientists of China, Shenzhen Peacock Plan (No. KQTD2016053112042971), Fundamental Research Foundation of Shenzhen (No. JCYJ20170817100405375), the Educational Commission of Guangdong Province project (No. 2015KGJHZ006), the Science and Technology Project of Guangdong Province (No. 2016B050501005), the Educational Commission of Guangdong Province (No. 2016KCXTD006), the Natural Science Foundation of SZU (No. 000050 and No. 2017029), the Shenzhen Science and Technology Innovation Commission (No. ZDSYS201707271554071), MOE Tier 2 grant (R 144000382112), A*STAR Pharos Program Grant (No. 1527300025), cleanroom facility support from the NUS Centre for Advanced 2D Materials (CA2DM), and the Photonics Center of Shenzhen University.
Funding Information:
This work was supported by the National Science Foundation of China (No. 51472164), the 1000 Talents Program for Young Scientists of China, Shenzhen Peacock Plan (No. KQTD2016053112042971) Fundamental Research Foundation of Shenzhen (No. JCYJ20170817100405375) the Educational Commission of Guangdong Province project (No. 2015KGJHZ006) the Science and Technology Project of Guangdong Province (No. 2016B050501005) the Educational Commission of Guangdong Province (No. 2016KCXTD006) the Natural Science Foundation of SZU (No. 000050 and No. 2017029) the Shenzhen Science and Technology Innovation Commission (No. ZDSYS201707271554071) MOE Tier 2 grant (R 144000382112), A-STAR Pharos Program Grant (No. 1527300025), cleanroom facility support from the NUS Centre for Advanced 2D Materials (CA2DM), and the Photonics Center of Shenzhen University.
PY - 2019/8/27
Y1 - 2019/8/27
N2 - Semiconducting molybdenum ditelluride (2H-MoTe2), a two-dimensional (2D) transition metal dichalcogenide, has attracted extensive research attention due to its favorable physical properties for future electronic devices, such as appropriate bandgap, ambipolar transport characteristic, and good chemical stability. The rational tuning of its electronic properties is a key point to achieve MoTe2-based complementary electronic and optoelectronic devices. Herein, we demonstrate the dynamic and effective control of the electronic properties of few-layer MoTe2, through the in situ surface modification with aluminum (Al) adatoms, with a view toward high-performance complementary inverter devices. MoTe2 is found to be significantly electron doped by Al, exhibiting a continuous transport transition from p-dominated ambipolar to n-type unipolar with enhanced electron mobility. Using a spatially controlled Al doping technique, both p- A nd n-channels are established on a single MoTe2 nanosheet, which gives complementary inverters with a record-high gain of â195, which stands out in the 2D family of materials due to the balanced p- A nd n-transport in Al-modified MoTe2. Our studies coupled with the tunable nature of in situ modification enable MoTe2 to be a promising candidate for high-performance complementary electronics.
AB - Semiconducting molybdenum ditelluride (2H-MoTe2), a two-dimensional (2D) transition metal dichalcogenide, has attracted extensive research attention due to its favorable physical properties for future electronic devices, such as appropriate bandgap, ambipolar transport characteristic, and good chemical stability. The rational tuning of its electronic properties is a key point to achieve MoTe2-based complementary electronic and optoelectronic devices. Herein, we demonstrate the dynamic and effective control of the electronic properties of few-layer MoTe2, through the in situ surface modification with aluminum (Al) adatoms, with a view toward high-performance complementary inverter devices. MoTe2 is found to be significantly electron doped by Al, exhibiting a continuous transport transition from p-dominated ambipolar to n-type unipolar with enhanced electron mobility. Using a spatially controlled Al doping technique, both p- A nd n-channels are established on a single MoTe2 nanosheet, which gives complementary inverters with a record-high gain of â195, which stands out in the 2D family of materials due to the balanced p- A nd n-transport in Al-modified MoTe2. Our studies coupled with the tunable nature of in situ modification enable MoTe2 to be a promising candidate for high-performance complementary electronics.
KW - MoTe
KW - aluminum
KW - bandgap tuning
KW - complementary inverter
KW - electron doping
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U2 - 10.1021/acsnano.9b04416
DO - 10.1021/acsnano.9b04416
M3 - Article
C2 - 31328916
AN - SCOPUS:85071713440
VL - 13
SP - 9464
EP - 9472
JO - ACS Nano
JF - ACS Nano
SN - 1936-0851
IS - 8
ER -