Controlled n-type doping of carbon nanotube transistors by an organorhodium dimer

Michael L. Geier, Karttikay Moudgil, Stephen Barlow, Seth R. Marder, Mark C Hersam

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

Single-walled carbon nanotube (SWCNT) transistors are among the most developed nanoelectronic devices for high-performance computing applications. While p-type SWCNT transistors are easily achieved through adventitious adsorption of atmospheric oxygen, n-type SWCNT transistors require extrinsic doping schemes. Existing n-type doping strategies for SWCNT transistors suffer from one or more issues including environmental instability, limited carrier concentration modulation, undesirable threshold voltage control, and/or poor morphology. In particular, commonly employed benzyl viologen n-type doping layers possess large thicknesses, which preclude top-gate transistor designs that underlie high-density integrated circuit layouts. To overcome these limitations, we report here the controlled n-type doping of SWCNT thin-film transistors with a solution-processed pentamethylrhodocene dimer. The charge transport properties of organorhodium-treated SWCNT thin films show consistent n-type behavior when characterized in both Hall effect and thin-film transistor geometries. Due to the molecular-scale thickness of the organorhodium adlayer, large-area arrays of top-gated, n-type SWCNT transistors are fabricated with high yield. This work will thus facilitate ongoing efforts to realize high-density SWCNT integrated circuits.

Original languageEnglish
Pages (from-to)4329-4334
Number of pages6
JournalNano Letters
Volume16
Issue number7
DOIs
Publication statusPublished - Jul 13 2016

Keywords

  • chemical doping
  • n-type
  • Single-walled carbon nanotubes
  • thin-film transistors
  • top-gate

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanical Engineering

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