Controlled n-type doping of carbon nanotube transistors by an organorhodium dimer

Michael L. Geier, Karttikay Moudgil, Stephen Barlow, Seth R. Marder, Mark C Hersam

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Single-walled carbon nanotube (SWCNT) transistors are among the most developed nanoelectronic devices for high-performance computing applications. While p-type SWCNT transistors are easily achieved through adventitious adsorption of atmospheric oxygen, n-type SWCNT transistors require extrinsic doping schemes. Existing n-type doping strategies for SWCNT transistors suffer from one or more issues including environmental instability, limited carrier concentration modulation, undesirable threshold voltage control, and/or poor morphology. In particular, commonly employed benzyl viologen n-type doping layers possess large thicknesses, which preclude top-gate transistor designs that underlie high-density integrated circuit layouts. To overcome these limitations, we report here the controlled n-type doping of SWCNT thin-film transistors with a solution-processed pentamethylrhodocene dimer. The charge transport properties of organorhodium-treated SWCNT thin films show consistent n-type behavior when characterized in both Hall effect and thin-film transistor geometries. Due to the molecular-scale thickness of the organorhodium adlayer, large-area arrays of top-gated, n-type SWCNT transistors are fabricated with high yield. This work will thus facilitate ongoing efforts to realize high-density SWCNT integrated circuits.

Original languageEnglish
Pages (from-to)4329-4334
Number of pages6
JournalNano Letters
Volume16
Issue number7
DOIs
Publication statusPublished - Jul 13 2016

Fingerprint

Carbon Nanotubes
Single-walled carbon nanotubes (SWCN)
Dimers
Carbon nanotubes
Transistors
transistors
carbon nanotubes
dimers
Doping (additives)
Thin film transistors
integrated circuits
Benzyl Viologen
thin films
Integrated circuit layout
Nanoelectronics
Hall effect
Threshold voltage
Voltage control
threshold voltage
layouts

Keywords

  • chemical doping
  • n-type
  • Single-walled carbon nanotubes
  • thin-film transistors
  • top-gate

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanical Engineering

Cite this

Controlled n-type doping of carbon nanotube transistors by an organorhodium dimer. / Geier, Michael L.; Moudgil, Karttikay; Barlow, Stephen; Marder, Seth R.; Hersam, Mark C.

In: Nano Letters, Vol. 16, No. 7, 13.07.2016, p. 4329-4334.

Research output: Contribution to journalArticle

Geier, Michael L. ; Moudgil, Karttikay ; Barlow, Stephen ; Marder, Seth R. ; Hersam, Mark C. / Controlled n-type doping of carbon nanotube transistors by an organorhodium dimer. In: Nano Letters. 2016 ; Vol. 16, No. 7. pp. 4329-4334.
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