Controlling film growth with selective excitation

Chemical vapor deposition growth of silicon

Biao Wu, Philip I. Cohen, Leonard C Feldman, Zhenyu Zhang

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A thin film growth control method called selectively enhanced adatom diffusion (SEAD) was proposed, which is used to promote the step-flow growth. The geometric frequency difference at a surface was used in an infrared laser to selectively excite only blocking adatoms at steps. It was stated that key to the method is to selectively excite blocking adatoms and enhance their mobility by properly tuning the laser frequency. The methods feasability for the chemical vapor desposition (CVD) growth of silicon was also discussed.

Original languageEnglish
Pages (from-to)2175-2177
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number12
DOIs
Publication statusPublished - Mar 22 2004

Fingerprint

adatoms
vapor deposition
silicon
excitation
infrared lasers
tuning
vapors
thin films
lasers

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Controlling film growth with selective excitation : Chemical vapor deposition growth of silicon. / Wu, Biao; Cohen, Philip I.; Feldman, Leonard C; Zhang, Zhenyu.

In: Applied Physics Letters, Vol. 84, No. 12, 22.03.2004, p. 2175-2177.

Research output: Contribution to journalArticle

Wu, Biao ; Cohen, Philip I. ; Feldman, Leonard C ; Zhang, Zhenyu. / Controlling film growth with selective excitation : Chemical vapor deposition growth of silicon. In: Applied Physics Letters. 2004 ; Vol. 84, No. 12. pp. 2175-2177.
@article{a4f7d2e7473a4941bb002abd59c9260b,
title = "Controlling film growth with selective excitation: Chemical vapor deposition growth of silicon",
abstract = "A thin film growth control method called selectively enhanced adatom diffusion (SEAD) was proposed, which is used to promote the step-flow growth. The geometric frequency difference at a surface was used in an infrared laser to selectively excite only blocking adatoms at steps. It was stated that key to the method is to selectively excite blocking adatoms and enhance their mobility by properly tuning the laser frequency. The methods feasability for the chemical vapor desposition (CVD) growth of silicon was also discussed.",
author = "Biao Wu and Cohen, {Philip I.} and Feldman, {Leonard C} and Zhenyu Zhang",
year = "2004",
month = "3",
day = "22",
doi = "10.1063/1.1687452",
language = "English",
volume = "84",
pages = "2175--2177",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "12",

}

TY - JOUR

T1 - Controlling film growth with selective excitation

T2 - Chemical vapor deposition growth of silicon

AU - Wu, Biao

AU - Cohen, Philip I.

AU - Feldman, Leonard C

AU - Zhang, Zhenyu

PY - 2004/3/22

Y1 - 2004/3/22

N2 - A thin film growth control method called selectively enhanced adatom diffusion (SEAD) was proposed, which is used to promote the step-flow growth. The geometric frequency difference at a surface was used in an infrared laser to selectively excite only blocking adatoms at steps. It was stated that key to the method is to selectively excite blocking adatoms and enhance their mobility by properly tuning the laser frequency. The methods feasability for the chemical vapor desposition (CVD) growth of silicon was also discussed.

AB - A thin film growth control method called selectively enhanced adatom diffusion (SEAD) was proposed, which is used to promote the step-flow growth. The geometric frequency difference at a surface was used in an infrared laser to selectively excite only blocking adatoms at steps. It was stated that key to the method is to selectively excite blocking adatoms and enhance their mobility by properly tuning the laser frequency. The methods feasability for the chemical vapor desposition (CVD) growth of silicon was also discussed.

UR - http://www.scopus.com/inward/record.url?scp=1942444568&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1942444568&partnerID=8YFLogxK

U2 - 10.1063/1.1687452

DO - 10.1063/1.1687452

M3 - Article

VL - 84

SP - 2175

EP - 2177

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 12

ER -