A thin film growth control method called selectively enhanced adatom diffusion (SEAD) was proposed, which is used to promote the step-flow growth. The geometric frequency difference at a surface was used in an infrared laser to selectively excite only blocking adatoms at steps. It was stated that key to the method is to selectively excite blocking adatoms and enhance their mobility by properly tuning the laser frequency. The methods feasability for the chemical vapor desposition (CVD) growth of silicon was also discussed.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)