Controlling the threshold voltage of a metal-oxide-semiconductor field effect transistor by molecular protonation of the Si: SiO2 interface

Jinman Yang, L. De La Garza, T. J. Thornton, M. Kozicki, D. Gust

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

An overview is given on results from a hybrid molecular/MOSFET that is sensitive to the presence of molecular layers attached to its surface. Numerical simulations of the device suggest that the shift in threshold voltage of the device after attachment of the molecular layer is due to protonation of the native oxide, and this is explained in terms of the greater acidity of the caboxylic acid.

Original languageEnglish
Pages (from-to)1706-1709
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number4
DOIs
Publication statusPublished - Jul 2002

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Protonation
MOSFET devices
Threshold voltage
Acidity
metal oxide semiconductors
threshold voltage
field effect transistors
Oxides
Acids
Computer simulation
acidity
attachment
acids
oxides
shift
simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Controlling the threshold voltage of a metal-oxide-semiconductor field effect transistor by molecular protonation of the Si : SiO2 interface. / Yang, Jinman; De La Garza, L.; Thornton, T. J.; Kozicki, M.; Gust, D.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 4, 07.2002, p. 1706-1709.

Research output: Contribution to journalArticle

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