Abstract
Several copper vanadium oxide melts were tested for possible application as the active medium in phase-change optical data storage devices. These materials were melted in the bulk and then quenched. Their phase development was characterized to help determine their applicability to optical data storage. It was found that they satisfy many of the criteria necessary for successful phase-change data storage; further studies of their behavior in thin film geometry would be warranted.
| Original language | English |
|---|---|
| Pages (from-to) | 741-744 |
| Number of pages | 4 |
| Journal | Journal of Materials Research |
| Volume | 7 |
| Issue number | 3 |
| Publication status | Published - Mar 1992 |
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ASJC Scopus subject areas
- Materials Science(all)
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Copper vanadates as candidate materials for phase change optical memory. / Birnie, Dunbar P; Weinberg, J. D.; Swanson, D. G.
In: Journal of Materials Research, Vol. 7, No. 3, 03.1992, p. 741-744.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Copper vanadates as candidate materials for phase change optical memory
AU - Birnie, Dunbar P
AU - Weinberg, J. D.
AU - Swanson, D. G.
PY - 1992/3
Y1 - 1992/3
N2 - Several copper vanadium oxide melts were tested for possible application as the active medium in phase-change optical data storage devices. These materials were melted in the bulk and then quenched. Their phase development was characterized to help determine their applicability to optical data storage. It was found that they satisfy many of the criteria necessary for successful phase-change data storage; further studies of their behavior in thin film geometry would be warranted.
AB - Several copper vanadium oxide melts were tested for possible application as the active medium in phase-change optical data storage devices. These materials were melted in the bulk and then quenched. Their phase development was characterized to help determine their applicability to optical data storage. It was found that they satisfy many of the criteria necessary for successful phase-change data storage; further studies of their behavior in thin film geometry would be warranted.
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UR - http://www.scopus.com/inward/citedby.url?scp=0026835150&partnerID=8YFLogxK
M3 - Article
VL - 7
SP - 741
EP - 744
JO - Journal of Materials Research
JF - Journal of Materials Research
SN - 0884-2914
IS - 3
ER -