Correlation between defect density and process variables in step-graded, relaxed Si0.7Ge0.3 grown on Si by RTCVD

Patrick G. Watson; Eugene A. Fitzgerald; Bahram Jalali; Ya Hong Xie; Bonnie Weir; Leonard C. Feldman

Correlation between defect density and process variables in step-graded, relaxed Si_0.7Ge_0.3 grown on Si by RTCVD

Patrick G. Watson, Eugene A. Fitzgerald, Bahram Jalali, Ya Hong Xie, Bonnie Weir, Leonard C. Feldman

Rutgers University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The effect of the average grading rate and of the number of incremental Ge alloy steps on the threading dislocation density has been studied in 30% Ge relaxed films formed by rapid thermal chemical vapor deposition (RTCVD) on Si substrates. Electron beam induced current (EBIC) images and transmission electron microscopy (TEM) show that threading defects fall in two categories: individual threading dislocation (dark spot defects), and organized clusters of these threads (pile-ups, or dark line defects). The overall surface defect density must include both categories to properly characterize the material. The lowest defect density, 4 × 10⁵ cm^-2, was found in specimens grown at an average grading rate of 10% Ge per μm thickness.

Original language	English
Title of host publication	Rapid Thermal and Integrated Processing II
Editors	Jeffrey C. Gelpey, Kiefer J. Elliott, Jimmie J. Wortman, Atul Ajmera
Publisher	Publ by Materials Research Society
Pages	15-17
Number of pages	3
ISBN (Print)	1558991999
Publication status	Published - Dec 1 1993
Event	Proceedings of the 1993 Spring Meeting of the Materials Research Society - San Francisco, CA, USA Duration: Apr 12 1993 → Apr 15 1993

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	303
ISSN (Print)	0272-9172

Other

Other	Proceedings of the 1993 Spring Meeting of the Materials Research Society
City	San Francisco, CA, USA
Period	4/12/93 → 4/15/93

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ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Watson, P. G., Fitzgerald, E. A., Jalali, B., Xie, Y. H., Weir, B., & Feldman, L. C. (1993). Correlation between defect density and process variables in step-graded, relaxed Si_0.7Ge_0.3 grown on Si by RTCVD. In J. C. Gelpey, K. J. Elliott, J. J. Wortman, & A. Ajmera (Eds.), Rapid Thermal and Integrated Processing II (pp. 15-17). (Materials Research Society Symposium Proceedings; Vol. 303). Publ by Materials Research Society.

Correlation between defect density and process variables in step-graded, relaxed Si_0.7Ge_0.3 grown on Si by RTCVD. / Watson, Patrick G.; Fitzgerald, Eugene A.; Jalali, Bahram; Xie, Ya Hong; Weir, Bonnie; Feldman, Leonard C.

Rapid Thermal and Integrated Processing II. ed. / Jeffrey C. Gelpey; Kiefer J. Elliott; Jimmie J. Wortman; Atul Ajmera. Publ by Materials Research Society, 1993. p. 15-17 (Materials Research Society Symposium Proceedings; Vol. 303).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Watson, PG, Fitzgerald, EA, Jalali, B, Xie, YH, Weir, B & Feldman, LC 1993, Correlation between defect density and process variables in step-graded, relaxed Si_0.7Ge_0.3 grown on Si by RTCVD. in JC Gelpey, KJ Elliott, JJ Wortman & A Ajmera (eds), Rapid Thermal and Integrated Processing II. Materials Research Society Symposium Proceedings, vol. 303, Publ by Materials Research Society, pp. 15-17, Proceedings of the 1993 Spring Meeting of the Materials Research Society, San Francisco, CA, USA, 4/12/93.

Watson PG, Fitzgerald EA, Jalali B, Xie YH, Weir B, Feldman LC. Correlation between defect density and process variables in step-graded, relaxed Si_0.7Ge_0.3 grown on Si by RTCVD. In Gelpey JC, Elliott KJ, Wortman JJ, Ajmera A, editors, Rapid Thermal and Integrated Processing II. Publ by Materials Research Society. 1993. p. 15-17. (Materials Research Society Symposium Proceedings).

Watson, Patrick G. ; Fitzgerald, Eugene A. ; Jalali, Bahram ; Xie, Ya Hong ; Weir, Bonnie ; Feldman, Leonard C. / Correlation between defect density and process variables in step-graded, relaxed Si_0.7Ge_0.3 grown on Si by RTCVD. Rapid Thermal and Integrated Processing II. editor / Jeffrey C. Gelpey ; Kiefer J. Elliott ; Jimmie J. Wortman ; Atul Ajmera. Publ by Materials Research Society, 1993. pp. 15-17 (Materials Research Society Symposium Proceedings).

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abstract = "The effect of the average grading rate and of the number of incremental Ge alloy steps on the threading dislocation density has been studied in 30% Ge relaxed films formed by rapid thermal chemical vapor deposition (RTCVD) on Si substrates. Electron beam induced current (EBIC) images and transmission electron microscopy (TEM) show that threading defects fall in two categories: individual threading dislocation (dark spot defects), and organized clusters of these threads (pile-ups, or dark line defects). The overall surface defect density must include both categories to properly characterize the material. The lowest defect density, 4 × 105 cm-2, was found in specimens grown at an average grading rate of 10% Ge per μm thickness.",

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