Correlation between defect density and process variables in step-graded, relaxed Si0.7Ge0.3 grown on Si by RTCVD

Patrick G. Watson, Eugene A. Fitzgerald, Bahram Jalali, Ya Hong Xie, Bonnie Weir, Leonard C Feldman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effect of the average grading rate and of the number of incremental Ge alloy steps on the threading dislocation density has been studied in 30% Ge relaxed films formed by rapid thermal chemical vapor deposition (RTCVD) on Si substrates. Electron beam induced current (EBIC) images and transmission electron microscopy (TEM) show that threading defects fall in two categories: individual threading dislocation (dark spot defects), and organized clusters of these threads (pile-ups, or dark line defects). The overall surface defect density must include both categories to properly characterize the material. The lowest defect density, 4 × 105 cm-2, was found in specimens grown at an average grading rate of 10% Ge per μm thickness.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsJeffrey C. Gelpey, Kiefer J. Elliott, Jimmie J. Wortman, Atul Ajmera
PublisherPubl by Materials Research Society
Pages15-17
Number of pages3
Volume303
ISBN (Print)1558991999
Publication statusPublished - 1993
EventProceedings of the 1993 Spring Meeting of the Materials Research Society - San Francisco, CA, USA
Duration: Apr 12 1993Apr 15 1993

Other

OtherProceedings of the 1993 Spring Meeting of the Materials Research Society
CitySan Francisco, CA, USA
Period4/12/934/15/93

Fingerprint

Defect density
Chemical vapor deposition
Defects
Surface defects
Induced currents
Piles
Electron beams
Transmission electron microscopy
Substrates
Hot Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Watson, P. G., Fitzgerald, E. A., Jalali, B., Xie, Y. H., Weir, B., & Feldman, L. C. (1993). Correlation between defect density and process variables in step-graded, relaxed Si0.7Ge0.3 grown on Si by RTCVD. In J. C. Gelpey, K. J. Elliott, J. J. Wortman, & A. Ajmera (Eds.), Materials Research Society Symposium Proceedings (Vol. 303, pp. 15-17). Publ by Materials Research Society.

Correlation between defect density and process variables in step-graded, relaxed Si0.7Ge0.3 grown on Si by RTCVD. / Watson, Patrick G.; Fitzgerald, Eugene A.; Jalali, Bahram; Xie, Ya Hong; Weir, Bonnie; Feldman, Leonard C.

Materials Research Society Symposium Proceedings. ed. / Jeffrey C. Gelpey; Kiefer J. Elliott; Jimmie J. Wortman; Atul Ajmera. Vol. 303 Publ by Materials Research Society, 1993. p. 15-17.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Watson, PG, Fitzgerald, EA, Jalali, B, Xie, YH, Weir, B & Feldman, LC 1993, Correlation between defect density and process variables in step-graded, relaxed Si0.7Ge0.3 grown on Si by RTCVD. in JC Gelpey, KJ Elliott, JJ Wortman & A Ajmera (eds), Materials Research Society Symposium Proceedings. vol. 303, Publ by Materials Research Society, pp. 15-17, Proceedings of the 1993 Spring Meeting of the Materials Research Society, San Francisco, CA, USA, 4/12/93.
Watson PG, Fitzgerald EA, Jalali B, Xie YH, Weir B, Feldman LC. Correlation between defect density and process variables in step-graded, relaxed Si0.7Ge0.3 grown on Si by RTCVD. In Gelpey JC, Elliott KJ, Wortman JJ, Ajmera A, editors, Materials Research Society Symposium Proceedings. Vol. 303. Publ by Materials Research Society. 1993. p. 15-17
Watson, Patrick G. ; Fitzgerald, Eugene A. ; Jalali, Bahram ; Xie, Ya Hong ; Weir, Bonnie ; Feldman, Leonard C. / Correlation between defect density and process variables in step-graded, relaxed Si0.7Ge0.3 grown on Si by RTCVD. Materials Research Society Symposium Proceedings. editor / Jeffrey C. Gelpey ; Kiefer J. Elliott ; Jimmie J. Wortman ; Atul Ajmera. Vol. 303 Publ by Materials Research Society, 1993. pp. 15-17
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abstract = "The effect of the average grading rate and of the number of incremental Ge alloy steps on the threading dislocation density has been studied in 30{\%} Ge relaxed films formed by rapid thermal chemical vapor deposition (RTCVD) on Si substrates. Electron beam induced current (EBIC) images and transmission electron microscopy (TEM) show that threading defects fall in two categories: individual threading dislocation (dark spot defects), and organized clusters of these threads (pile-ups, or dark line defects). The overall surface defect density must include both categories to properly characterize the material. The lowest defect density, 4 × 105 cm-2, was found in specimens grown at an average grading rate of 10{\%} Ge per μm thickness.",
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