Abstract
The effect of the average grading rate and of the number of incremental Ge alloy steps on the threading dislocation density has been studied in 30% Ge relaxed films formed by rapid thermal chemical vapor deposition (RTCVD) on Si substrates. Electron beam induced current (EBIC) images and transmission electron microscopy (TEM) show that threading defects fall in two categories: individual threading dislocation (dark spot defects), and organized clusters of these threads (pile-ups, or dark line defects). The overall surface defect density must include both categories to properly characterize the material. The lowest defect density, 4 × 105 cm-2, was found in specimens grown at an average grading rate of 10% Ge per μm thickness.
Original language | English |
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Title of host publication | Rapid Thermal and Integrated Processing II |
Editors | Jeffrey C. Gelpey, Kiefer J. Elliott, Jimmie J. Wortman, Atul Ajmera |
Publisher | Publ by Materials Research Society |
Pages | 15-17 |
Number of pages | 3 |
ISBN (Print) | 1558991999 |
Publication status | Published - Dec 1 1993 |
Event | Proceedings of the 1993 Spring Meeting of the Materials Research Society - San Francisco, CA, USA Duration: Apr 12 1993 → Apr 15 1993 |
Publication series
Name | Materials Research Society Symposium Proceedings |
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Volume | 303 |
ISSN (Print) | 0272-9172 |
Other
Other | Proceedings of the 1993 Spring Meeting of the Materials Research Society |
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City | San Francisco, CA, USA |
Period | 4/12/93 → 4/15/93 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering