Abstract
The effect of the average grading rate and of the number of incremental Ge alloy steps on the threading dislocation density has been studied in 30% Ge relaxed films formed by rapid thermal chemical vapor deposition (RTCVD) on Si substrates. Electron beam induced current (EBIC) images and transmission electron microscopy (TEM) show that threading defects fall in two categories: individual threading dislocation (dark spot defects), and organized clusters of these threads (pile-ups, or dark line defects). The overall surface defect density must include both categories to properly characterize the material. The lowest defect density, 4 × 105 cm-2, was found in specimens grown at an average grading rate of 10% Ge per μm thickness.
| Original language | English |
|---|---|
| Title of host publication | Materials Research Society Symposium Proceedings |
| Editors | Jeffrey C. Gelpey, Kiefer J. Elliott, Jimmie J. Wortman, Atul Ajmera |
| Publisher | Publ by Materials Research Society |
| Pages | 15-17 |
| Number of pages | 3 |
| Volume | 303 |
| ISBN (Print) | 1558991999 |
| Publication status | Published - 1993 |
| Event | Proceedings of the 1993 Spring Meeting of the Materials Research Society - San Francisco, CA, USA Duration: Apr 12 1993 → Apr 15 1993 |
Other
| Other | Proceedings of the 1993 Spring Meeting of the Materials Research Society |
|---|---|
| City | San Francisco, CA, USA |
| Period | 4/12/93 → 4/15/93 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
Cite this
Correlation between defect density and process variables in step-graded, relaxed Si0.7Ge0.3 grown on Si by RTCVD. / Watson, Patrick G.; Fitzgerald, Eugene A.; Jalali, Bahram; Xie, Ya Hong; Weir, Bonnie; Feldman, Leonard C.
Materials Research Society Symposium Proceedings. ed. / Jeffrey C. Gelpey; Kiefer J. Elliott; Jimmie J. Wortman; Atul Ajmera. Vol. 303 Publ by Materials Research Society, 1993. p. 15-17.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Correlation between defect density and process variables in step-graded, relaxed Si0.7Ge0.3 grown on Si by RTCVD
AU - Watson, Patrick G.
AU - Fitzgerald, Eugene A.
AU - Jalali, Bahram
AU - Xie, Ya Hong
AU - Weir, Bonnie
AU - Feldman, Leonard C
PY - 1993
Y1 - 1993
N2 - The effect of the average grading rate and of the number of incremental Ge alloy steps on the threading dislocation density has been studied in 30% Ge relaxed films formed by rapid thermal chemical vapor deposition (RTCVD) on Si substrates. Electron beam induced current (EBIC) images and transmission electron microscopy (TEM) show that threading defects fall in two categories: individual threading dislocation (dark spot defects), and organized clusters of these threads (pile-ups, or dark line defects). The overall surface defect density must include both categories to properly characterize the material. The lowest defect density, 4 × 105 cm-2, was found in specimens grown at an average grading rate of 10% Ge per μm thickness.
AB - The effect of the average grading rate and of the number of incremental Ge alloy steps on the threading dislocation density has been studied in 30% Ge relaxed films formed by rapid thermal chemical vapor deposition (RTCVD) on Si substrates. Electron beam induced current (EBIC) images and transmission electron microscopy (TEM) show that threading defects fall in two categories: individual threading dislocation (dark spot defects), and organized clusters of these threads (pile-ups, or dark line defects). The overall surface defect density must include both categories to properly characterize the material. The lowest defect density, 4 × 105 cm-2, was found in specimens grown at an average grading rate of 10% Ge per μm thickness.
UR - http://www.scopus.com/inward/record.url?scp=0027814270&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0027814270&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0027814270
SN - 1558991999
VL - 303
SP - 15
EP - 17
BT - Materials Research Society Symposium Proceedings
A2 - Gelpey, Jeffrey C.
A2 - Elliott, Kiefer J.
A2 - Wortman, Jimmie J.
A2 - Ajmera, Atul
PB - Publ by Materials Research Society
ER -