Correlation between defect density and process variables in step-graded, relaxed Si0.7Ge0.3 grown on Si by RTCVD

Patrick G. Watson, Eugene A. Fitzgerald, Bahram Jalali, Ya Hong Xie, Bonnie Weir, Leonard C. Feldman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effect of the average grading rate and of the number of incremental Ge alloy steps on the threading dislocation density has been studied in 30% Ge relaxed films formed by rapid thermal chemical vapor deposition (RTCVD) on Si substrates. Electron beam induced current (EBIC) images and transmission electron microscopy (TEM) show that threading defects fall in two categories: individual threading dislocation (dark spot defects), and organized clusters of these threads (pile-ups, or dark line defects). The overall surface defect density must include both categories to properly characterize the material. The lowest defect density, 4 × 105 cm-2, was found in specimens grown at an average grading rate of 10% Ge per μm thickness.

Original languageEnglish
Title of host publicationRapid Thermal and Integrated Processing II
EditorsJeffrey C. Gelpey, Kiefer J. Elliott, Jimmie J. Wortman, Atul Ajmera
PublisherPubl by Materials Research Society
Pages15-17
Number of pages3
ISBN (Print)1558991999
Publication statusPublished - Dec 1 1993
EventProceedings of the 1993 Spring Meeting of the Materials Research Society - San Francisco, CA, USA
Duration: Apr 12 1993Apr 15 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume303
ISSN (Print)0272-9172

Other

OtherProceedings of the 1993 Spring Meeting of the Materials Research Society
CitySan Francisco, CA, USA
Period4/12/934/15/93

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Watson, P. G., Fitzgerald, E. A., Jalali, B., Xie, Y. H., Weir, B., & Feldman, L. C. (1993). Correlation between defect density and process variables in step-graded, relaxed Si0.7Ge0.3 grown on Si by RTCVD. In J. C. Gelpey, K. J. Elliott, J. J. Wortman, & A. Ajmera (Eds.), Rapid Thermal and Integrated Processing II (pp. 15-17). (Materials Research Society Symposium Proceedings; Vol. 303). Publ by Materials Research Society.