@inproceedings{8754deea83154a8faf0861e317640a0e,
title = "Correlation between defect density and process variables in step-graded, relaxed Si0.7Ge0.3 grown on Si by RTCVD",
abstract = "The effect of the average grading rate and of the number of incremental Ge alloy steps on the threading dislocation density has been studied in 30% Ge relaxed films formed by rapid thermal chemical vapor deposition (RTCVD) on Si substrates. Electron beam induced current (EBIC) images and transmission electron microscopy (TEM) show that threading defects fall in two categories: individual threading dislocation (dark spot defects), and organized clusters of these threads (pile-ups, or dark line defects). The overall surface defect density must include both categories to properly characterize the material. The lowest defect density, 4 × 105 cm-2, was found in specimens grown at an average grading rate of 10% Ge per μm thickness.",
author = "Watson, {Patrick G.} and Fitzgerald, {Eugene A.} and Bahram Jalali and Xie, {Ya Hong} and Bonnie Weir and Feldman, {Leonard C.}",
year = "1993",
month = dec,
day = "1",
language = "English",
isbn = "1558991999",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "15--17",
editor = "Gelpey, {Jeffrey C.} and Elliott, {Kiefer J.} and Wortman, {Jimmie J.} and Atul Ajmera",
booktitle = "Rapid Thermal and Integrated Processing II",
note = "Proceedings of the 1993 Spring Meeting of the Materials Research Society ; Conference date: 12-04-1993 Through 15-04-1993",
}