Semiconductor/liquid junctions derived from 0. 5 mu m thick films of amorphous hydrogenated silicon, a-Si:H, have been investigated in CH//3OH solvent. It is found that a-Si:H anodes in 0. 02M ferrocene, FeCp//2/0. 5mM FeCp//2** plus /1. 5M LiClO//4/CH//3OH solutions exhibit poor short-circuit quantum yields and low fill factors with 632. 8 nm irradiation, but that these junctions display internal quantum yields of close to unity and high fill factors with short wavelength irradiation. The observed photoelectrochemical behavior of these a-Si:H films is consistent with documented bulk transport and carrier collection properties of a-Si:H, and does not show evidence for series resistance losses, unusual spectral response characteristics, or recombination sites at the semiconductor/liquid junction. Manipulation of the electronic properties of the a-Si:H films can thus lead to improved energy conversion parameters and a clearer picture of the chemistry at the a-Si:H/liquid interface.
|Number of pages||8|
|Journal||Journal of the Electrochemical Society|
|Publication status||Published - Dec 1984|
ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Surfaces and Interfaces