CORRELATION OF THE PHOTOELECTROCHEMISTRY OF THE AMORPHOUS HYDROGENATED SILICON/METHANOL INTERFACE WITH BULK SEMICONDUCTOR PROPERTIES.

Chris M. Gronet, Nathan S Lewis, George W. Cogan, James F. Gibbons, Garret R. Moddel, Harold Wiesmann

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Semiconductor/liquid junctions derived from 0. 5 mu m thick films of amorphous hydrogenated silicon, a-Si:H, have been investigated in CH//3OH solvent. It is found that a-Si:H anodes in 0. 02M ferrocene, FeCp//2/0. 5mM FeCp//2** plus /1. 5M LiClO//4/CH//3OH solutions exhibit poor short-circuit quantum yields and low fill factors with 632. 8 nm irradiation, but that these junctions display internal quantum yields of close to unity and high fill factors with short wavelength irradiation. The observed photoelectrochemical behavior of these a-Si:H films is consistent with documented bulk transport and carrier collection properties of a-Si:H, and does not show evidence for series resistance losses, unusual spectral response characteristics, or recombination sites at the semiconductor/liquid junction. Manipulation of the electronic properties of the a-Si:H films can thus lead to improved energy conversion parameters and a clearer picture of the chemistry at the a-Si:H/liquid interface.

Original languageEnglish
Pages (from-to)2873-2880
Number of pages8
JournalJournal of the Electrochemical Society
Volume131
Issue number12
Publication statusPublished - Dec 1984

Fingerprint

photoelectrochemistry
Amorphous silicon
amorphous silicon
Methanol
methyl alcohol
Quantum yield
Semiconductor materials
Liquids
liquids
Irradiation
methylidyne
irradiation
short circuits
energy conversion
spectral sensitivity
Energy conversion
Thick films
Electronic properties
Short circuit currents
thick films

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

CORRELATION OF THE PHOTOELECTROCHEMISTRY OF THE AMORPHOUS HYDROGENATED SILICON/METHANOL INTERFACE WITH BULK SEMICONDUCTOR PROPERTIES. / Gronet, Chris M.; Lewis, Nathan S; Cogan, George W.; Gibbons, James F.; Moddel, Garret R.; Wiesmann, Harold.

In: Journal of the Electrochemical Society, Vol. 131, No. 12, 12.1984, p. 2873-2880.

Research output: Contribution to journalArticle

Gronet, Chris M. ; Lewis, Nathan S ; Cogan, George W. ; Gibbons, James F. ; Moddel, Garret R. ; Wiesmann, Harold. / CORRELATION OF THE PHOTOELECTROCHEMISTRY OF THE AMORPHOUS HYDROGENATED SILICON/METHANOL INTERFACE WITH BULK SEMICONDUCTOR PROPERTIES. In: Journal of the Electrochemical Society. 1984 ; Vol. 131, No. 12. pp. 2873-2880.
@article{100e634ae46c44068e5de1180f704a86,
title = "CORRELATION OF THE PHOTOELECTROCHEMISTRY OF THE AMORPHOUS HYDROGENATED SILICON/METHANOL INTERFACE WITH BULK SEMICONDUCTOR PROPERTIES.",
abstract = "Semiconductor/liquid junctions derived from 0. 5 mu m thick films of amorphous hydrogenated silicon, a-Si:H, have been investigated in CH//3OH solvent. It is found that a-Si:H anodes in 0. 02M ferrocene, FeCp//2/0. 5mM FeCp//2** plus /1. 5M LiClO//4/CH//3OH solutions exhibit poor short-circuit quantum yields and low fill factors with 632. 8 nm irradiation, but that these junctions display internal quantum yields of close to unity and high fill factors with short wavelength irradiation. The observed photoelectrochemical behavior of these a-Si:H films is consistent with documented bulk transport and carrier collection properties of a-Si:H, and does not show evidence for series resistance losses, unusual spectral response characteristics, or recombination sites at the semiconductor/liquid junction. Manipulation of the electronic properties of the a-Si:H films can thus lead to improved energy conversion parameters and a clearer picture of the chemistry at the a-Si:H/liquid interface.",
author = "Gronet, {Chris M.} and Lewis, {Nathan S} and Cogan, {George W.} and Gibbons, {James F.} and Moddel, {Garret R.} and Harold Wiesmann",
year = "1984",
month = "12",
language = "English",
volume = "131",
pages = "2873--2880",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "12",

}

TY - JOUR

T1 - CORRELATION OF THE PHOTOELECTROCHEMISTRY OF THE AMORPHOUS HYDROGENATED SILICON/METHANOL INTERFACE WITH BULK SEMICONDUCTOR PROPERTIES.

AU - Gronet, Chris M.

AU - Lewis, Nathan S

AU - Cogan, George W.

AU - Gibbons, James F.

AU - Moddel, Garret R.

AU - Wiesmann, Harold

PY - 1984/12

Y1 - 1984/12

N2 - Semiconductor/liquid junctions derived from 0. 5 mu m thick films of amorphous hydrogenated silicon, a-Si:H, have been investigated in CH//3OH solvent. It is found that a-Si:H anodes in 0. 02M ferrocene, FeCp//2/0. 5mM FeCp//2** plus /1. 5M LiClO//4/CH//3OH solutions exhibit poor short-circuit quantum yields and low fill factors with 632. 8 nm irradiation, but that these junctions display internal quantum yields of close to unity and high fill factors with short wavelength irradiation. The observed photoelectrochemical behavior of these a-Si:H films is consistent with documented bulk transport and carrier collection properties of a-Si:H, and does not show evidence for series resistance losses, unusual spectral response characteristics, or recombination sites at the semiconductor/liquid junction. Manipulation of the electronic properties of the a-Si:H films can thus lead to improved energy conversion parameters and a clearer picture of the chemistry at the a-Si:H/liquid interface.

AB - Semiconductor/liquid junctions derived from 0. 5 mu m thick films of amorphous hydrogenated silicon, a-Si:H, have been investigated in CH//3OH solvent. It is found that a-Si:H anodes in 0. 02M ferrocene, FeCp//2/0. 5mM FeCp//2** plus /1. 5M LiClO//4/CH//3OH solutions exhibit poor short-circuit quantum yields and low fill factors with 632. 8 nm irradiation, but that these junctions display internal quantum yields of close to unity and high fill factors with short wavelength irradiation. The observed photoelectrochemical behavior of these a-Si:H films is consistent with documented bulk transport and carrier collection properties of a-Si:H, and does not show evidence for series resistance losses, unusual spectral response characteristics, or recombination sites at the semiconductor/liquid junction. Manipulation of the electronic properties of the a-Si:H films can thus lead to improved energy conversion parameters and a clearer picture of the chemistry at the a-Si:H/liquid interface.

UR - http://www.scopus.com/inward/record.url?scp=0021625734&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021625734&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0021625734

VL - 131

SP - 2873

EP - 2880

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 12

ER -