Correlations between the interfacial chemistry and current-voltage behavior of n-GaAs/liquid junctions

Bruce J. Tufts, Louis G. Casagrande, Nathan S Lewis, Frank J. Grunthaner

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Correlations between the surface chemistry of etched, (100) oriented n-GaAs electrodes and their subsequent photoelectrochemical behavior have been probed by high-resolution x-ray photoelectron spectroscopy. GaAs photoanodes were chemically treated to prepare either an oxide-free near stoichiometric surface, a surface enriched in zero-valent arsenic (As0), or a substrate-oxide terminated surface. The current-voltage (I-V) behavior of each surface type was subsequently monitored in contact with several electrolytes.

Original languageEnglish
Pages (from-to)1242-1244
Number of pages3
JournalApplied Physics Letters
Volume57
Issue number12
DOIs
Publication statusPublished - 1990

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chemistry
electric potential
liquids
oxides
arsenic
x ray spectroscopy
photoelectron spectroscopy
electrolytes
electrodes
high resolution

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Correlations between the interfacial chemistry and current-voltage behavior of n-GaAs/liquid junctions. / Tufts, Bruce J.; Casagrande, Louis G.; Lewis, Nathan S; Grunthaner, Frank J.

In: Applied Physics Letters, Vol. 57, No. 12, 1990, p. 1242-1244.

Research output: Contribution to journalArticle

Tufts, Bruce J. ; Casagrande, Louis G. ; Lewis, Nathan S ; Grunthaner, Frank J. / Correlations between the interfacial chemistry and current-voltage behavior of n-GaAs/liquid junctions. In: Applied Physics Letters. 1990 ; Vol. 57, No. 12. pp. 1242-1244.
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