Correlations between the interfacial chemistry and current-voltage behavior of n-GaAs/liquid junctions

Bruce J. Tufts; Louis G. Casagrande; Nathan S. Lewis; Frank J. Grunthaner

doi:10.1063/1.103497

Correlations between the interfacial chemistry and current-voltage behavior of n-GaAs/liquid junctions

Bruce J. Tufts, Louis G. Casagrande, Nathan S. Lewis, Frank J. Grunthaner

California Institute of Technology

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Correlations between the surface chemistry of etched, (100) oriented n-GaAs electrodes and their subsequent photoelectrochemical behavior have been probed by high-resolution x-ray photoelectron spectroscopy. GaAs photoanodes were chemically treated to prepare either an oxide-free near stoichiometric surface, a surface enriched in zero-valent arsenic (As⁰), or a substrate-oxide terminated surface. The current-voltage (I-V) behavior of each surface type was subsequently monitored in contact with several electrolytes.

Original language	English
Pages (from-to)	1242-1244
Number of pages	3
Journal	Applied Physics Letters
Volume	57
Issue number	12
DOIs	https://doi.org/10.1063/1.103497
Publication status	Published - 1990

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{1ae5e3a4efa5401e85da152c14f839d6,

title = "Correlations between the interfacial chemistry and current-voltage behavior of n-GaAs/liquid junctions",

abstract = "Correlations between the surface chemistry of etched, (100) oriented n-GaAs electrodes and their subsequent photoelectrochemical behavior have been probed by high-resolution x-ray photoelectron spectroscopy. GaAs photoanodes were chemically treated to prepare either an oxide-free near stoichiometric surface, a surface enriched in zero-valent arsenic (As0), or a substrate-oxide terminated surface. The current-voltage (I-V) behavior of each surface type was subsequently monitored in contact with several electrolytes.",

author = "Tufts, {Bruce J.} and Casagrande, {Louis G.} and Lewis, {Nathan S.} and Grunthaner, {Frank J.}",

year = "1990",

doi = "10.1063/1.103497",

language = "English",

volume = "57",

pages = "1242--1244",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "12",

}

TY - JOUR

T1 - Correlations between the interfacial chemistry and current-voltage behavior of n-GaAs/liquid junctions

AU - Tufts, Bruce J.

AU - Casagrande, Louis G.

AU - Lewis, Nathan S.

AU - Grunthaner, Frank J.

PY - 1990

Y1 - 1990

N2 - Correlations between the surface chemistry of etched, (100) oriented n-GaAs electrodes and their subsequent photoelectrochemical behavior have been probed by high-resolution x-ray photoelectron spectroscopy. GaAs photoanodes were chemically treated to prepare either an oxide-free near stoichiometric surface, a surface enriched in zero-valent arsenic (As0), or a substrate-oxide terminated surface. The current-voltage (I-V) behavior of each surface type was subsequently monitored in contact with several electrolytes.

AB - Correlations between the surface chemistry of etched, (100) oriented n-GaAs electrodes and their subsequent photoelectrochemical behavior have been probed by high-resolution x-ray photoelectron spectroscopy. GaAs photoanodes were chemically treated to prepare either an oxide-free near stoichiometric surface, a surface enriched in zero-valent arsenic (As0), or a substrate-oxide terminated surface. The current-voltage (I-V) behavior of each surface type was subsequently monitored in contact with several electrolytes.

UR - http://www.scopus.com/inward/record.url?scp=0343420581&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0343420581&partnerID=8YFLogxK

U2 - 10.1063/1.103497

DO - 10.1063/1.103497

M3 - Article

AN - SCOPUS:0343420581

VL - 57

SP - 1242

EP - 1244

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 12

ER -

Correlations between the interfacial chemistry and current-voltage behavior of n-GaAs/liquid junctions

Abstract

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