TY - JOUR
T1 - Correlations between the interfacial chemistry and current-voltage behavior of n-GaAs/liquid junctions
AU - Tufts, Bruce J.
AU - Casagrande, Louis G.
AU - Lewis, Nathan S
AU - Grunthaner, Frank J.
PY - 1990
Y1 - 1990
N2 - Correlations between the surface chemistry of etched, (100) oriented n-GaAs electrodes and their subsequent photoelectrochemical behavior have been probed by high-resolution x-ray photoelectron spectroscopy. GaAs photoanodes were chemically treated to prepare either an oxide-free near stoichiometric surface, a surface enriched in zero-valent arsenic (As0), or a substrate-oxide terminated surface. The current-voltage (I-V) behavior of each surface type was subsequently monitored in contact with several electrolytes.
AB - Correlations between the surface chemistry of etched, (100) oriented n-GaAs electrodes and their subsequent photoelectrochemical behavior have been probed by high-resolution x-ray photoelectron spectroscopy. GaAs photoanodes were chemically treated to prepare either an oxide-free near stoichiometric surface, a surface enriched in zero-valent arsenic (As0), or a substrate-oxide terminated surface. The current-voltage (I-V) behavior of each surface type was subsequently monitored in contact with several electrolytes.
UR - http://www.scopus.com/inward/record.url?scp=0343420581&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0343420581&partnerID=8YFLogxK
U2 - 10.1063/1.103497
DO - 10.1063/1.103497
M3 - Article
AN - SCOPUS:0343420581
VL - 57
SP - 1242
EP - 1244
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 12
ER -