Abstract
Correlations between the surface chemistry of etched, (100) oriented n-GaAs electrodes and their subsequent photoelectrochemical behavior have been probed by high-resolution x-ray photoelectron spectroscopy. GaAs photoanodes were chemically treated to prepare either an oxide-free near stoichiometric surface, a surface enriched in zero-valent arsenic (As0), or a substrate-oxide terminated surface. The current-voltage (I-V) behavior of each surface type was subsequently monitored in contact with several electrolytes.
| Original language | English |
|---|---|
| Pages (from-to) | 1242-1244 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 57 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 1990 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Tufts, B. J., Casagrande, L. G., Lewis, N. S., & Grunthaner, F. J. (1990). Correlations between the interfacial chemistry and current-voltage behavior of n-GaAs/liquid junctions. Applied Physics Letters, 57(12), 1242-1244. https://doi.org/10.1063/1.103497