Correlations between the interfacial chemistry and current-voltage behavior of n-GaAs/liquid junctions

Bruce J. Tufts; Louis G. Casagrande; Nathan S Lewis; Frank J. Grunthaner

doi:10.1063/1.103497

Correlations between the interfacial chemistry and current-voltage behavior of n-GaAs/liquid junctions

Bruce J. Tufts, Louis G. Casagrande, Nathan S Lewis, Frank J. Grunthaner

California Institute of Technology

Research output: Contribution to journal › Article

7 Citations (Scopus)

Abstract

Correlations between the surface chemistry of etched, (100) oriented n-GaAs electrodes and their subsequent photoelectrochemical behavior have been probed by high-resolution x-ray photoelectron spectroscopy. GaAs photoanodes were chemically treated to prepare either an oxide-free near stoichiometric surface, a surface enriched in zero-valent arsenic (As⁰), or a substrate-oxide terminated surface. The current-voltage (I-V) behavior of each surface type was subsequently monitored in contact with several electrolytes.

Original language	English
Pages (from-to)	1242-1244
Number of pages	3
Journal	Applied Physics Letters
Volume	57
Issue number	12
DOIs	https://doi.org/10.1063/1.103497
Publication status	Published - 1990

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ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Tufts, B. J., Casagrande, L. G., Lewis, N. S., & Grunthaner, F. J. (1990). Correlations between the interfacial chemistry and current-voltage behavior of n-GaAs/liquid junctions. Applied Physics Letters, 57(12), 1242-1244. https://doi.org/10.1063/1.103497

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10.1063/1.103497