Abstract
Correlations between the surface chemistry of etched, (100) oriented n-GaAs electrodes and their subsequent photoelectrochemical behavior have been probed by high-resolution x-ray photoelectron spectroscopy. GaAs photoanodes were chemically treated to prepare either an oxide-free near stoichiometric surface, a surface enriched in zero-valent arsenic (As0), or a substrate-oxide terminated surface. The current-voltage (I-V) behavior of each surface type was subsequently monitored in contact with several electrolytes.
| Original language | English |
|---|---|
| Pages (from-to) | 1242-1244 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 57 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 1990 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Correlations between the interfacial chemistry and current-voltage behavior of n-GaAs/liquid junctions. / Tufts, Bruce J.; Casagrande, Louis G.; Lewis, Nathan S; Grunthaner, Frank J.
In: Applied Physics Letters, Vol. 57, No. 12, 1990, p. 1242-1244.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Correlations between the interfacial chemistry and current-voltage behavior of n-GaAs/liquid junctions
AU - Tufts, Bruce J.
AU - Casagrande, Louis G.
AU - Lewis, Nathan S
AU - Grunthaner, Frank J.
PY - 1990
Y1 - 1990
N2 - Correlations between the surface chemistry of etched, (100) oriented n-GaAs electrodes and their subsequent photoelectrochemical behavior have been probed by high-resolution x-ray photoelectron spectroscopy. GaAs photoanodes were chemically treated to prepare either an oxide-free near stoichiometric surface, a surface enriched in zero-valent arsenic (As0), or a substrate-oxide terminated surface. The current-voltage (I-V) behavior of each surface type was subsequently monitored in contact with several electrolytes.
AB - Correlations between the surface chemistry of etched, (100) oriented n-GaAs electrodes and their subsequent photoelectrochemical behavior have been probed by high-resolution x-ray photoelectron spectroscopy. GaAs photoanodes were chemically treated to prepare either an oxide-free near stoichiometric surface, a surface enriched in zero-valent arsenic (As0), or a substrate-oxide terminated surface. The current-voltage (I-V) behavior of each surface type was subsequently monitored in contact with several electrolytes.
UR - http://www.scopus.com/inward/record.url?scp=0343420581&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0343420581&partnerID=8YFLogxK
U2 - 10.1063/1.103497
DO - 10.1063/1.103497
M3 - Article
VL - 57
SP - 1242
EP - 1244
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 12
ER -