Co2MnX (X=Si, Ge, Sn) Heusler compounds: An ab-initio study

S. Picozzi; A. Continenza; Arthur J Freeman

doi:10.1109/INTMAG.2002.1001331

Co₂MnX (X=Si, Ge, Sn) Heusler compounds: An ab-initio study

S. Picozzi, A. Continenza, Arthur J Freeman

Northwestern University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

All-electron full-potential linearized augmented plane wave (FLAPW) calculations have been performed for Co₂MnX (X=Si, Ge, Sn) Heusler compounds, focusing on structural, electronic and magnetic properties. The comparison between the local spin density approximation (LSDA) and the generalized gradient approximation (GGA) for the exchange-correlation functional shows that GGA is essential to give an accurate description of the equilibrium volumes and of the electronic and magnetic properties of these systems.

Original language	English
Title of host publication	INTERMAG Europe 2002 - IEEE International Magnetics Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	0780373650, 9780780373655
DOIs	https://doi.org/10.1109/INTMAG.2002.1001331
Publication status	Published - 2002
Event	2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 - Amsterdam, Netherlands Duration: Apr 28 2002 → May 2 2002

Other

Other	2002 IEEE International Magnetics Conference, INTERMAG Europe 2002
Country	Netherlands
City	Amsterdam
Period	4/28/02 → 5/2/02

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Surfaces, Coatings and Films

Access to Document

10.1109/INTMAG.2002.1001331

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Picozzi, S, Continenza, A & Freeman, AJ 2002, Co₂MnX (X=Si, Ge, Sn) Heusler compounds: An ab-initio study. in INTERMAG Europe 2002 - IEEE International Magnetics Conference., 1001331, Institute of Electrical and Electronics Engineers Inc., 2002 IEEE International Magnetics Conference, INTERMAG Europe 2002, Amsterdam, Netherlands, 4/28/02. https://doi.org/10.1109/INTMAG.2002.1001331

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