Co2MnX (X=Si, Ge, Sn) Heusler compounds: An ab-initio study

S. Picozzi, A. Continenza, Arthur J Freeman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

All-electron full-potential linearized augmented plane wave (FLAPW) calculations have been performed for Co2MnX (X=Si, Ge, Sn) Heusler compounds, focusing on structural, electronic and magnetic properties. The comparison between the local spin density approximation (LSDA) and the generalized gradient approximation (GGA) for the exchange-correlation functional shows that GGA is essential to give an accurate description of the equilibrium volumes and of the electronic and magnetic properties of these systems.

Original languageEnglish
Title of host publicationINTERMAG Europe 2002 - IEEE International Magnetics Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)0780373650, 9780780373655
DOIs
Publication statusPublished - 2002
Event2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 - Amsterdam, Netherlands
Duration: Apr 28 2002May 2 2002

Other

Other2002 IEEE International Magnetics Conference, INTERMAG Europe 2002
CountryNetherlands
CityAmsterdam
Period4/28/025/2/02

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Surfaces, Coatings and Films

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    Picozzi, S., Continenza, A., & Freeman, A. J. (2002). Co2MnX (X=Si, Ge, Sn) Heusler compounds: An ab-initio study. In INTERMAG Europe 2002 - IEEE International Magnetics Conference [1001331] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INTMAG.2002.1001331