Covalent attachment of acetylene and methylacetylene functionality to Si(111) surfaces: Scaffolds for organic surface functionalization while retaining Si-C passivation of Si(111) surface sites

Patrick T. Hurley, E. Joseph Nemanick, Bruce S. Brunschwig, Nathan S Lewis

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59 Citations (Scopus)

Abstract

Si(111) surfaces have been functionalized with Si-C≡C-R species, where R = H or -CH3, using a two-step reaction sequence involving chlorination of H-Si(111) followed by treatment with Na-C≡C-H or CH3-C≡C-Na reagents. The resulting surfaces showed no detectable oxidation as evidenced by X-ray photoelectron spectroscopic (XPS) data in the Si 2p region, electrochemical measurements of Si-H oxidation, or infrared spectroscopy. The Si-C≡C-R-terminated surfaces exhibited a characteristic C≡C stretch in the infrared at 2179 cm-1, which was strongly polarized perpendicular to the Si(111) surface plane. XPS measurements in the C 1s region showed a low binding energy peak indicative of Si-C bonding, with a coverage that was, within experimental error, identical to that of the CH3-terminated Si(111) surface, which has been shown to fully terminate the Si atop sites on an unreconstructed Si(111) surface. The Si-C≡C-H-terminated surfaces were further functionalized by exposure to n-C4H9Li followed by exposure to para Br-C6H5-CF3, allowing for introduction of para -C6H5CF3 groups while maintaining the desirable chemical and electrical properties that accompany complete Si-C termination of the atop sites on the Si(111) surface.

Original languageEnglish
Pages (from-to)9990-9991
Number of pages2
JournalJournal of the American Chemical Society
Volume128
Issue number31
DOIs
Publication statusPublished - Aug 9 2006

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Acetylene
Passivation
Scaffolds
X-Rays
Halogenation
Spectrum Analysis
Photoelectrons
X rays
Oxidation
methylacetylene
Chlorination
Binding energy
Chemical properties
Infrared spectroscopy
Electric properties
Infrared radiation

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

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title = "Covalent attachment of acetylene and methylacetylene functionality to Si(111) surfaces: Scaffolds for organic surface functionalization while retaining Si-C passivation of Si(111) surface sites",
abstract = "Si(111) surfaces have been functionalized with Si-C≡C-R species, where R = H or -CH3, using a two-step reaction sequence involving chlorination of H-Si(111) followed by treatment with Na-C≡C-H or CH3-C≡C-Na reagents. The resulting surfaces showed no detectable oxidation as evidenced by X-ray photoelectron spectroscopic (XPS) data in the Si 2p region, electrochemical measurements of Si-H oxidation, or infrared spectroscopy. The Si-C≡C-R-terminated surfaces exhibited a characteristic C≡C stretch in the infrared at 2179 cm-1, which was strongly polarized perpendicular to the Si(111) surface plane. XPS measurements in the C 1s region showed a low binding energy peak indicative of Si-C bonding, with a coverage that was, within experimental error, identical to that of the CH3-terminated Si(111) surface, which has been shown to fully terminate the Si atop sites on an unreconstructed Si(111) surface. The Si-C≡C-H-terminated surfaces were further functionalized by exposure to n-C4H9Li followed by exposure to para Br-C6H5-CF3, allowing for introduction of para -C6H5CF3 groups while maintaining the desirable chemical and electrical properties that accompany complete Si-C termination of the atop sites on the Si(111) surface.",
author = "Hurley, {Patrick T.} and Nemanick, {E. Joseph} and Brunschwig, {Bruce S.} and Lewis, {Nathan S}",
year = "2006",
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T2 - Scaffolds for organic surface functionalization while retaining Si-C passivation of Si(111) surface sites

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AU - Nemanick, E. Joseph

AU - Brunschwig, Bruce S.

AU - Lewis, Nathan S

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AB - Si(111) surfaces have been functionalized with Si-C≡C-R species, where R = H or -CH3, using a two-step reaction sequence involving chlorination of H-Si(111) followed by treatment with Na-C≡C-H or CH3-C≡C-Na reagents. The resulting surfaces showed no detectable oxidation as evidenced by X-ray photoelectron spectroscopic (XPS) data in the Si 2p region, electrochemical measurements of Si-H oxidation, or infrared spectroscopy. The Si-C≡C-R-terminated surfaces exhibited a characteristic C≡C stretch in the infrared at 2179 cm-1, which was strongly polarized perpendicular to the Si(111) surface plane. XPS measurements in the C 1s region showed a low binding energy peak indicative of Si-C bonding, with a coverage that was, within experimental error, identical to that of the CH3-terminated Si(111) surface, which has been shown to fully terminate the Si atop sites on an unreconstructed Si(111) surface. The Si-C≡C-H-terminated surfaces were further functionalized by exposure to n-C4H9Li followed by exposure to para Br-C6H5-CF3, allowing for introduction of para -C6H5CF3 groups while maintaining the desirable chemical and electrical properties that accompany complete Si-C termination of the atop sites on the Si(111) surface.

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