Abstract
Criteria are established for evaluating whether self-diffusion in a material may be occurring by a site-interchange diffusion mechanism. The criteria include comparisons between defect formation and migration energies for the site-interchange model and a normal vacancy diffusion model. These criteria are applied to some material systems to illustrate their utility. A siteinterchange diffusion mechanism is probably occurring in lithium niobate, but this mechanism is not operative in silicon carbide or in some III-V compound semiconductors.
| Original language | English |
|---|---|
| Pages (from-to) | 1277-1279 |
| Number of pages | 3 |
| Journal | Journal of the American Ceramic Society |
| Volume | 72 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - Jul 1989 |
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Keywords
- Diffusion
- Lithium niobate
- Modeling
- Silicon carbide
- Stoichiometry
ASJC Scopus subject areas
- Ceramics and Composites
- Materials Chemistry
Cite this
Criteria for diffusion by a site-interchange mechanism. / Birnie, Dunbar P.
In: Journal of the American Ceramic Society, Vol. 72, No. 7, 07.1989, p. 1277-1279.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Criteria for diffusion by a site-interchange mechanism
AU - Birnie, Dunbar P
PY - 1989/7
Y1 - 1989/7
N2 - Criteria are established for evaluating whether self-diffusion in a material may be occurring by a site-interchange diffusion mechanism. The criteria include comparisons between defect formation and migration energies for the site-interchange model and a normal vacancy diffusion model. These criteria are applied to some material systems to illustrate their utility. A siteinterchange diffusion mechanism is probably occurring in lithium niobate, but this mechanism is not operative in silicon carbide or in some III-V compound semiconductors.
AB - Criteria are established for evaluating whether self-diffusion in a material may be occurring by a site-interchange diffusion mechanism. The criteria include comparisons between defect formation and migration energies for the site-interchange model and a normal vacancy diffusion model. These criteria are applied to some material systems to illustrate their utility. A siteinterchange diffusion mechanism is probably occurring in lithium niobate, but this mechanism is not operative in silicon carbide or in some III-V compound semiconductors.
KW - Diffusion
KW - Lithium niobate
KW - Modeling
KW - Silicon carbide
KW - Stoichiometry
UR - http://www.scopus.com/inward/record.url?scp=84865759131&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84865759131&partnerID=8YFLogxK
U2 - 10.1111/j.1151-2916.1989.tb09700.x
DO - 10.1111/j.1151-2916.1989.tb09700.x
M3 - Article
AN - SCOPUS:84865759131
VL - 72
SP - 1277
EP - 1279
JO - Journal of the American Ceramic Society
JF - Journal of the American Ceramic Society
SN - 0002-7820
IS - 7
ER -