Cross-linkable molecular hole-transporting semiconductor for solid-state dye-sensitized solar cells

Nanjia Zhou, Byunghong Lee, Amod Timalsina, Peijun Guo, Xinge Yu, Tobin J Marks, Antonio Facchetti, Robert P. H. Chang

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

In this study, we investigate the use of a cross-linkable organosilane semiconductor, 4,4′-bis[(p-trichlorosilylpropylphenyl)phenylamino]biphenyl (TPDSi2), as a hole-transporting material (HTM) for solid-state dye-sensitized solar cells (ssDSSCs) using the standard amphiphilic Z907 dye which is compatible with organic HTM deposition. The properties and performance of the resulting cells are then compared and contrasted with the ones based on poly(3-hexylthiophene) (P3HT), a conventional polymeric HTM, but with rather limited pore-filling capacity. When processed under N2, TPDSi 2 exhibits excellent infiltration into the mesoporous TiO2 layer and thus enables the fabrication of relatively thick devices (∼5 μm) for efficient photon harvesting. When exposed to ambient atmosphere (RHamb ∼ 20%), TPDSi2 readily undergoes cross-linking to afford a rigid, thermally stable hole-transporting layer. In addition, the effect of tert-butylpyridine (TBP) and lithium bis(trifluoromethylsulfonyl)imide salt (Li-TFSI) additives on the electrochemical properties of these HTMs is studied via a combination of cyclic voltammetry (CV) and ultraviolet photoemission spectroscopy (UPS) measurements. The results demonstrate that the additives significantly enhance the space charge limited current (SCLC) mobilities for both the P3HT and TPDSi2 HTMs and induce a shift in the TPDSi2 Fermi level, likely a p-doping effect. These combined effects of improved charge transport characteristics for the TPDSi2 devices enhance the power conversion efficiency (PCE) by more than 2-fold for ssDSSCs.

Original languageEnglish
Pages (from-to)16967-16975
Number of pages9
JournalJournal of Physical Chemistry C
Volume118
Issue number30
DOIs
Publication statusPublished - Jul 31 2014

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solar cells
dyes
Semiconductor materials
solid state
Imides
Photoelectron spectroscopy
Fermi level
Ultraviolet spectroscopy
Electrochemical properties
Electric space charge
Lithium
Infiltration
Conversion efficiency
Cyclic voltammetry
Charge transfer
imides
Coloring Agents
infiltration
Photons
Dyes

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Energy(all)

Cite this

Cross-linkable molecular hole-transporting semiconductor for solid-state dye-sensitized solar cells. / Zhou, Nanjia; Lee, Byunghong; Timalsina, Amod; Guo, Peijun; Yu, Xinge; Marks, Tobin J; Facchetti, Antonio; Chang, Robert P. H.

In: Journal of Physical Chemistry C, Vol. 118, No. 30, 31.07.2014, p. 16967-16975.

Research output: Contribution to journalArticle

Zhou, Nanjia ; Lee, Byunghong ; Timalsina, Amod ; Guo, Peijun ; Yu, Xinge ; Marks, Tobin J ; Facchetti, Antonio ; Chang, Robert P. H. / Cross-linkable molecular hole-transporting semiconductor for solid-state dye-sensitized solar cells. In: Journal of Physical Chemistry C. 2014 ; Vol. 118, No. 30. pp. 16967-16975.
@article{7174f2ca954d41f7903e0c2ac1a12365,
title = "Cross-linkable molecular hole-transporting semiconductor for solid-state dye-sensitized solar cells",
abstract = "In this study, we investigate the use of a cross-linkable organosilane semiconductor, 4,4′-bis[(p-trichlorosilylpropylphenyl)phenylamino]biphenyl (TPDSi2), as a hole-transporting material (HTM) for solid-state dye-sensitized solar cells (ssDSSCs) using the standard amphiphilic Z907 dye which is compatible with organic HTM deposition. The properties and performance of the resulting cells are then compared and contrasted with the ones based on poly(3-hexylthiophene) (P3HT), a conventional polymeric HTM, but with rather limited pore-filling capacity. When processed under N2, TPDSi 2 exhibits excellent infiltration into the mesoporous TiO2 layer and thus enables the fabrication of relatively thick devices (∼5 μm) for efficient photon harvesting. When exposed to ambient atmosphere (RHamb ∼ 20{\%}), TPDSi2 readily undergoes cross-linking to afford a rigid, thermally stable hole-transporting layer. In addition, the effect of tert-butylpyridine (TBP) and lithium bis(trifluoromethylsulfonyl)imide salt (Li-TFSI) additives on the electrochemical properties of these HTMs is studied via a combination of cyclic voltammetry (CV) and ultraviolet photoemission spectroscopy (UPS) measurements. The results demonstrate that the additives significantly enhance the space charge limited current (SCLC) mobilities for both the P3HT and TPDSi2 HTMs and induce a shift in the TPDSi2 Fermi level, likely a p-doping effect. These combined effects of improved charge transport characteristics for the TPDSi2 devices enhance the power conversion efficiency (PCE) by more than 2-fold for ssDSSCs.",
author = "Nanjia Zhou and Byunghong Lee and Amod Timalsina and Peijun Guo and Xinge Yu and Marks, {Tobin J} and Antonio Facchetti and Chang, {Robert P. H.}",
year = "2014",
month = "7",
day = "31",
doi = "10.1021/jp500489f",
language = "English",
volume = "118",
pages = "16967--16975",
journal = "Journal of Physical Chemistry C",
issn = "1932-7447",
publisher = "American Chemical Society",
number = "30",

}

TY - JOUR

T1 - Cross-linkable molecular hole-transporting semiconductor for solid-state dye-sensitized solar cells

AU - Zhou, Nanjia

AU - Lee, Byunghong

AU - Timalsina, Amod

AU - Guo, Peijun

AU - Yu, Xinge

AU - Marks, Tobin J

AU - Facchetti, Antonio

AU - Chang, Robert P. H.

PY - 2014/7/31

Y1 - 2014/7/31

N2 - In this study, we investigate the use of a cross-linkable organosilane semiconductor, 4,4′-bis[(p-trichlorosilylpropylphenyl)phenylamino]biphenyl (TPDSi2), as a hole-transporting material (HTM) for solid-state dye-sensitized solar cells (ssDSSCs) using the standard amphiphilic Z907 dye which is compatible with organic HTM deposition. The properties and performance of the resulting cells are then compared and contrasted with the ones based on poly(3-hexylthiophene) (P3HT), a conventional polymeric HTM, but with rather limited pore-filling capacity. When processed under N2, TPDSi 2 exhibits excellent infiltration into the mesoporous TiO2 layer and thus enables the fabrication of relatively thick devices (∼5 μm) for efficient photon harvesting. When exposed to ambient atmosphere (RHamb ∼ 20%), TPDSi2 readily undergoes cross-linking to afford a rigid, thermally stable hole-transporting layer. In addition, the effect of tert-butylpyridine (TBP) and lithium bis(trifluoromethylsulfonyl)imide salt (Li-TFSI) additives on the electrochemical properties of these HTMs is studied via a combination of cyclic voltammetry (CV) and ultraviolet photoemission spectroscopy (UPS) measurements. The results demonstrate that the additives significantly enhance the space charge limited current (SCLC) mobilities for both the P3HT and TPDSi2 HTMs and induce a shift in the TPDSi2 Fermi level, likely a p-doping effect. These combined effects of improved charge transport characteristics for the TPDSi2 devices enhance the power conversion efficiency (PCE) by more than 2-fold for ssDSSCs.

AB - In this study, we investigate the use of a cross-linkable organosilane semiconductor, 4,4′-bis[(p-trichlorosilylpropylphenyl)phenylamino]biphenyl (TPDSi2), as a hole-transporting material (HTM) for solid-state dye-sensitized solar cells (ssDSSCs) using the standard amphiphilic Z907 dye which is compatible with organic HTM deposition. The properties and performance of the resulting cells are then compared and contrasted with the ones based on poly(3-hexylthiophene) (P3HT), a conventional polymeric HTM, but with rather limited pore-filling capacity. When processed under N2, TPDSi 2 exhibits excellent infiltration into the mesoporous TiO2 layer and thus enables the fabrication of relatively thick devices (∼5 μm) for efficient photon harvesting. When exposed to ambient atmosphere (RHamb ∼ 20%), TPDSi2 readily undergoes cross-linking to afford a rigid, thermally stable hole-transporting layer. In addition, the effect of tert-butylpyridine (TBP) and lithium bis(trifluoromethylsulfonyl)imide salt (Li-TFSI) additives on the electrochemical properties of these HTMs is studied via a combination of cyclic voltammetry (CV) and ultraviolet photoemission spectroscopy (UPS) measurements. The results demonstrate that the additives significantly enhance the space charge limited current (SCLC) mobilities for both the P3HT and TPDSi2 HTMs and induce a shift in the TPDSi2 Fermi level, likely a p-doping effect. These combined effects of improved charge transport characteristics for the TPDSi2 devices enhance the power conversion efficiency (PCE) by more than 2-fold for ssDSSCs.

UR - http://www.scopus.com/inward/record.url?scp=84905445516&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84905445516&partnerID=8YFLogxK

U2 - 10.1021/jp500489f

DO - 10.1021/jp500489f

M3 - Article

AN - SCOPUS:84905445516

VL - 118

SP - 16967

EP - 16975

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

SN - 1932-7447

IS - 30

ER -