Crystal growth of ternary and quaternary alkali metal bismuth chalcogenides using Bridgman technique

T. Kyratsi, D. Y. Chung, K. S. Choi, J. S. Dick, W. Chen, C. Uher, Mercouri G Kanatzidis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Our exploratory research in new thermoelectric materials has identified the ternary and quaternary bismuth chalcogenides β-K2Bi8Se13, K2.5Bi8.5Se14 and K1+xPb4-2xBi7+xSe15, to have promising properties for thermoelectric applications. These materials have needlelike morphology so they are highly anisotropic in their electrical and thermal properties. In order to achieve long and well-oriented needles for which, consequently, the best thermoelectric performance is expected, we developed a modified Bridgman technique for their bulk crystal growth. The preliminary results of our crystal growth experiments as well as electrical conductivity, Seebeck coefficient and thermal conductivity for the compounds obtained from this technique are presented.

Original languageEnglish
Title of host publicationProceedings - IEEE International Symposium on Circuits and Systems
Volume4
Publication statusPublished - 2001
EventIEEE International Symposium on Circuits and Systems (ISCAS 2001) - Sydney, NSW, Australia
Duration: May 6 2001May 9 2001

Other

OtherIEEE International Symposium on Circuits and Systems (ISCAS 2001)
CountryAustralia
CitySydney, NSW
Period5/6/015/9/01

Fingerprint

Alkali Metals
Chalcogenides
Bismuth
Alkali metals
Crystallization
Crystal growth
Seebeck coefficient
Needles
Thermal conductivity
Electric properties
Thermodynamic properties
Experiments
Electric Conductivity

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Kyratsi, T., Chung, D. Y., Choi, K. S., Dick, J. S., Chen, W., Uher, C., & Kanatzidis, M. G. (2001). Crystal growth of ternary and quaternary alkali metal bismuth chalcogenides using Bridgman technique. In Proceedings - IEEE International Symposium on Circuits and Systems (Vol. 4)

Crystal growth of ternary and quaternary alkali metal bismuth chalcogenides using Bridgman technique. / Kyratsi, T.; Chung, D. Y.; Choi, K. S.; Dick, J. S.; Chen, W.; Uher, C.; Kanatzidis, Mercouri G.

Proceedings - IEEE International Symposium on Circuits and Systems. Vol. 4 2001.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kyratsi, T, Chung, DY, Choi, KS, Dick, JS, Chen, W, Uher, C & Kanatzidis, MG 2001, Crystal growth of ternary and quaternary alkali metal bismuth chalcogenides using Bridgman technique. in Proceedings - IEEE International Symposium on Circuits and Systems. vol. 4, IEEE International Symposium on Circuits and Systems (ISCAS 2001), Sydney, NSW, Australia, 5/6/01.
Kyratsi T, Chung DY, Choi KS, Dick JS, Chen W, Uher C et al. Crystal growth of ternary and quaternary alkali metal bismuth chalcogenides using Bridgman technique. In Proceedings - IEEE International Symposium on Circuits and Systems. Vol. 4. 2001
Kyratsi, T. ; Chung, D. Y. ; Choi, K. S. ; Dick, J. S. ; Chen, W. ; Uher, C. ; Kanatzidis, Mercouri G. / Crystal growth of ternary and quaternary alkali metal bismuth chalcogenides using Bridgman technique. Proceedings - IEEE International Symposium on Circuits and Systems. Vol. 4 2001.
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