Crystal growth of the perovskite semiconductor CsPbBr3: A new material for high-energy radiation detection

Constantinos C. Stoumpos, Christos D. Malliakas, John A. Peters, Zhifu Liu, Maria Sebastian, Jino Im, Thomas C. Chasapis, Arief C. Wibowo, Duck Young Chung, Arthur J. Freeman, Bruce W. Wessels, Mercouri G. Kanatzidis

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575 Citations (Scopus)

Abstract

The synthesis, crystal growth, and structural and optoelectronic characterization has been carried out for the perovskite compound CsPbBr 3. This compound is a direct band gap semiconductor which meets most of the requirements for successful detection of X- and γ-ray radiation, such as high attenuation, high resistivity, and significant photoconductivity response, with detector resolution comparable to that of commercial, state-of-the-art materials. A structural phase transition which occurs during crystal growth at higher temperature does not seem to affect its crystal quality. Its μτ product for both hole and electron carriers is approximately equal. The μτ product for electrons is comparable to cadmium zinc telluride (CZT) and that for holes is 10 times higher than CZT.

Original languageEnglish
Pages (from-to)2722-2727
Number of pages6
JournalCrystal Growth and Design
Volume13
Issue number7
DOIs
Publication statusPublished - Jul 3 2013

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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    Stoumpos, C. C., Malliakas, C. D., Peters, J. A., Liu, Z., Sebastian, M., Im, J., Chasapis, T. C., Wibowo, A. C., Chung, D. Y., Freeman, A. J., Wessels, B. W., & Kanatzidis, M. G. (2013). Crystal growth of the perovskite semiconductor CsPbBr3: A new material for high-energy radiation detection. Crystal Growth and Design, 13(7), 2722-2727. https://doi.org/10.1021/cg400645t