Crystal structure and properties of indium telluride [Ga(en) 3]In 3Te 7

Zhen Chen, Jing Li, D. M. Proserpio, Zi Xiang Huang

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Abstract

[Ga(en) 3]In 3Te 7(I) has been synthesized by solvothermal technique using Rb 2Te, GaCl 3, InCl 3 and Te as starting materials and ethylenediamine as solvent at 180°C for 7 days. The structure consists of a Zintl anion, 2[In 3Te 7] 3- and a complex cation, [Ga(en) 3] 3+. I belongs to the monoclinic, space group P2 1/c, (no.14), with unit cell dimensions: a = 1.0460(2)nm, b = 1.6981(3)nm, c = 1.4994(6)nm, β = 95.46(2)°, V = 2.651(1)nm 3, Z = 4. Optical studies were performed on the powder samples, which suggested that I is a semiconductor with a band gap of 1.65eV. The result of TGA thermal analysis on I indicated that the weight loss of enthylendiamine proceeded in three steps. The decomposition of I produced Ga 2Te 3, In 2Te 3, Te and ethylenediamine as the final residues.

Original languageEnglish
Pages (from-to)835-839
Number of pages5
JournalActa Chimica Sinica
Volume58
Issue number7
Publication statusPublished - 2000

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Keywords

  • Chalcogenides
  • Crystal structure
  • Inorganic polymer
  • Solvothermal synthesis

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

Chen, Z., Li, J., Proserpio, D. M., & Huang, Z. X. (2000). Crystal structure and properties of indium telluride [Ga(en) 3]In 3Te 7 . Acta Chimica Sinica, 58(7), 835-839.