Crystal structure and properties of indium telluride [Ga(en) 3]In 3Te 7

Zhen Chen; Jing Li; D. M. Proserpio; Zi Xiang Huang

Crystal structure and properties of indium telluride [Ga(en) ₃]In ₃Te ₇

Zhen Chen, Jing Li, D. M. Proserpio, Zi Xiang Huang

Rutgers University

Research output: Contribution to journal › Article

9 Citations (Scopus)

Abstract

[Ga(en) ₃]In ₃Te ₇(I) has been synthesized by solvothermal technique using Rb ₂Te, GaCl ₃, InCl ₃ and Te as starting materials and ethylenediamine as solvent at 180°C for 7 days. The structure consists of a Zintl anion, _∞ ²[In ₃Te ₇] ^3- and a complex cation, [Ga(en) ₃] ³⁺. I belongs to the monoclinic, space group P2 ₁/c, (no.14), with unit cell dimensions: a = 1.0460(2)nm, b = 1.6981(3)nm, c = 1.4994(6)nm, β = 95.46(2)°, V = 2.651(1)nm ³, Z = 4. Optical studies were performed on the powder samples, which suggested that I is a semiconductor with a band gap of 1.65eV. The result of TGA thermal analysis on I indicated that the weight loss of enthylendiamine proceeded in three steps. The decomposition of I produced Ga ₂Te ₃, In ₂Te ₃, Te and ethylenediamine as the final residues.

Original language	English
Pages (from-to)	835-839
Number of pages	5
Journal	Acta Chimica Sinica
Volume	58
Issue number	7
Publication status	Published - Dec 1 2000

Keywords

Chalcogenides
Crystal structure
Inorganic polymer
Solvothermal synthesis

ASJC Scopus subject areas

Chemistry(all)

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Chen, Z., Li, J., Proserpio, D. M., & Huang, Z. X. (2000). Crystal structure and properties of indium telluride [Ga(en) ₃]In ₃Te ₇ Acta Chimica Sinica, 58(7), 835-839.

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title = "Crystal structure and properties of indium telluride [Ga(en) 3]In 3Te 7 ",

abstract = "[Ga(en) 3]In 3Te 7(I) has been synthesized by solvothermal technique using Rb 2Te, GaCl 3, InCl 3 and Te as starting materials and ethylenediamine as solvent at 180°C for 7 days. The structure consists of a Zintl anion, ∞ 2[In 3Te 7] 3- and a complex cation, [Ga(en) 3] 3+. I belongs to the monoclinic, space group P2 1/c, (no.14), with unit cell dimensions: a = 1.0460(2)nm, b = 1.6981(3)nm, c = 1.4994(6)nm, β = 95.46(2)°, V = 2.651(1)nm 3, Z = 4. Optical studies were performed on the powder samples, which suggested that I is a semiconductor with a band gap of 1.65eV. The result of TGA thermal analysis on I indicated that the weight loss of enthylendiamine proceeded in three steps. The decomposition of I produced Ga 2Te 3, In 2Te 3, Te and ethylenediamine as the final residues.",

keywords = "Chalcogenides, Crystal structure, Inorganic polymer, Solvothermal synthesis",

author = "Zhen Chen and Jing Li and Proserpio, {D. M.} and Huang, {Zi Xiang}",

year = "2000",

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T1 - Crystal structure and properties of indium telluride [Ga(en) 3]In 3Te 7

AU - Chen, Zhen

AU - Li, Jing

AU - Proserpio, D. M.

AU - Huang, Zi Xiang

PY - 2000/12/1

Y1 - 2000/12/1

N2 - [Ga(en) 3]In 3Te 7(I) has been synthesized by solvothermal technique using Rb 2Te, GaCl 3, InCl 3 and Te as starting materials and ethylenediamine as solvent at 180°C for 7 days. The structure consists of a Zintl anion, ∞ 2[In 3Te 7] 3- and a complex cation, [Ga(en) 3] 3+. I belongs to the monoclinic, space group P2 1/c, (no.14), with unit cell dimensions: a = 1.0460(2)nm, b = 1.6981(3)nm, c = 1.4994(6)nm, β = 95.46(2)°, V = 2.651(1)nm 3, Z = 4. Optical studies were performed on the powder samples, which suggested that I is a semiconductor with a band gap of 1.65eV. The result of TGA thermal analysis on I indicated that the weight loss of enthylendiamine proceeded in three steps. The decomposition of I produced Ga 2Te 3, In 2Te 3, Te and ethylenediamine as the final residues.

AB - [Ga(en) 3]In 3Te 7(I) has been synthesized by solvothermal technique using Rb 2Te, GaCl 3, InCl 3 and Te as starting materials and ethylenediamine as solvent at 180°C for 7 days. The structure consists of a Zintl anion, ∞ 2[In 3Te 7] 3- and a complex cation, [Ga(en) 3] 3+. I belongs to the monoclinic, space group P2 1/c, (no.14), with unit cell dimensions: a = 1.0460(2)nm, b = 1.6981(3)nm, c = 1.4994(6)nm, β = 95.46(2)°, V = 2.651(1)nm 3, Z = 4. Optical studies were performed on the powder samples, which suggested that I is a semiconductor with a band gap of 1.65eV. The result of TGA thermal analysis on I indicated that the weight loss of enthylendiamine proceeded in three steps. The decomposition of I produced Ga 2Te 3, In 2Te 3, Te and ethylenediamine as the final residues.

KW - Chalcogenides

KW - Crystal structure

KW - Inorganic polymer

KW - Solvothermal synthesis

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