CsAg5Te3: a new metal-rich telluride with a unique tunnel structure

Jing Li; Hong You Guo; Xiang Zhang; Mercouri G. Kanatzidis

doi:10.1016/0925-8388(94)01359-4

CsAg₅Te₃: a new metal-rich telluride with a unique tunnel structure

Jing Li, Hong You Guo, Xiang Zhang, Mercouri G. Kanatzidis

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

The synthesis and structure of a new ternary silver telluride, CsAg₅Te₃, is described. The compound was prepared from a Cs₂TeCaTeTe flux but it can also be prepared from a direct combination of Cs₂Te and Ag₂Te under vacuum at 600 °C. The crystal data for CsAg₅Te₃ at 20 °C (Mo Kα radiation) are as follows: a = 14.672(2) A ̊ and c = 4.601(3) A ̊; V = 990.5(8) A ̊³; Z = 4; D_calc = 7.075 g cm^-3; space group, P4₂/mnm (No. 136); 2θ_max = 50°; number of independent data collected, 572; number of data observed with I > 3σ(I), 267; number of variables, 32; μ = 218.51 cm^-1; extinction coefficient, 0.585 × 10^-7; final R = 0.040; R_w = 0.046; goodness of fit, 1.42. The compound features a new structure type with Cs⁺-filled, relatively large tunnels running through the lattice. The material is a semiconductor with a band gap of about 0.65 eV.

Original language	English
Pages (from-to)	1-4
Number of pages	4
Journal	Journal of Alloys and Compounds
Volume	218
Issue number	1
DOIs	https://doi.org/10.1016/0925-8388(94)01359-4
Publication status	Published - Feb 15 1995

Keywords

Semiconductors
Ternary silver telluride
Tunnel structure

ASJC Scopus subject areas

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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title = "CsAg5Te3: a new metal-rich telluride with a unique tunnel structure",

abstract = "The synthesis and structure of a new ternary silver telluride, CsAg5Te3, is described. The compound was prepared from a Cs2TeCaTeTe flux but it can also be prepared from a direct combination of Cs2Te and Ag2Te under vacuum at 600 °C. The crystal data for CsAg5Te3 at 20 °C (Mo Kα radiation) are as follows: a = 14.672(2) A ̊ and c = 4.601(3) A ̊; V = 990.5(8) A ̊3; Z = 4; Dcalc = 7.075 g cm-3; space group, P42/mnm (No. 136); 2θmax = 50°; number of independent data collected, 572; number of data observed with I > 3σ(I), 267; number of variables, 32; μ = 218.51 cm-1; extinction coefficient, 0.585 × 10-7; final R = 0.040; Rw = 0.046; goodness of fit, 1.42. The compound features a new structure type with Cs+-filled, relatively large tunnels running through the lattice. The material is a semiconductor with a band gap of about 0.65 eV.",

keywords = "Semiconductors, Ternary silver telluride, Tunnel structure",

author = "Jing Li and Guo, {Hong You} and Xiang Zhang and Kanatzidis, {Mercouri G.}",

year = "1995",

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T2 - a new metal-rich telluride with a unique tunnel structure

AU - Li, Jing

AU - Guo, Hong You

AU - Zhang, Xiang

AU - Kanatzidis, Mercouri G.

PY - 1995/2/15

Y1 - 1995/2/15

N2 - The synthesis and structure of a new ternary silver telluride, CsAg5Te3, is described. The compound was prepared from a Cs2TeCaTeTe flux but it can also be prepared from a direct combination of Cs2Te and Ag2Te under vacuum at 600 °C. The crystal data for CsAg5Te3 at 20 °C (Mo Kα radiation) are as follows: a = 14.672(2) A ̊ and c = 4.601(3) A ̊; V = 990.5(8) A ̊3; Z = 4; Dcalc = 7.075 g cm-3; space group, P42/mnm (No. 136); 2θmax = 50°; number of independent data collected, 572; number of data observed with I > 3σ(I), 267; number of variables, 32; μ = 218.51 cm-1; extinction coefficient, 0.585 × 10-7; final R = 0.040; Rw = 0.046; goodness of fit, 1.42. The compound features a new structure type with Cs+-filled, relatively large tunnels running through the lattice. The material is a semiconductor with a band gap of about 0.65 eV.

AB - The synthesis and structure of a new ternary silver telluride, CsAg5Te3, is described. The compound was prepared from a Cs2TeCaTeTe flux but it can also be prepared from a direct combination of Cs2Te and Ag2Te under vacuum at 600 °C. The crystal data for CsAg5Te3 at 20 °C (Mo Kα radiation) are as follows: a = 14.672(2) A ̊ and c = 4.601(3) A ̊; V = 990.5(8) A ̊3; Z = 4; Dcalc = 7.075 g cm-3; space group, P42/mnm (No. 136); 2θmax = 50°; number of independent data collected, 572; number of data observed with I > 3σ(I), 267; number of variables, 32; μ = 218.51 cm-1; extinction coefficient, 0.585 × 10-7; final R = 0.040; Rw = 0.046; goodness of fit, 1.42. The compound features a new structure type with Cs+-filled, relatively large tunnels running through the lattice. The material is a semiconductor with a band gap of about 0.65 eV.

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