CsAg5Te3

a new metal-rich telluride with a unique tunnel structure

Jing Li, Hong You Guo, Xiang Zhang, Mercouri G Kanatzidis

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

The synthesis and structure of a new ternary silver telluride, CsAg5Te3, is described. The compound was prepared from a Cs2TeCaTeTe flux but it can also be prepared from a direct combination of Cs2Te and Ag2Te under vacuum at 600 °C. The crystal data for CsAg5Te3 at 20 °C (Mo Kα radiation) are as follows: a = 14.672(2) A ̊ and c = 4.601(3) A ̊; V = 990.5(8) A ̊3; Z = 4; Dcalc = 7.075 g cm-3; space group, P42/mnm (No. 136); 2θmax = 50°; number of independent data collected, 572; number of data observed with I > 3σ(I), 267; number of variables, 32; μ = 218.51 cm-1; extinction coefficient, 0.585 × 10-7; final R = 0.040; Rw = 0.046; goodness of fit, 1.42. The compound features a new structure type with Cs+-filled, relatively large tunnels running through the lattice. The material is a semiconductor with a band gap of about 0.65 eV.

Original languageEnglish
Pages (from-to)1-4
Number of pages4
JournalJournal of Alloys and Compounds
Volume218
Issue number1
DOIs
Publication statusPublished - Feb 15 1995

Fingerprint

Silver
Crystal lattices
Tunnels
Energy gap
Metals
Vacuum
Semiconductor materials
Fluxes
Radiation
Crystals

Keywords

  • Semiconductors
  • Ternary silver telluride
  • Tunnel structure

ASJC Scopus subject areas

  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Chemistry
  • Metals and Alloys

Cite this

CsAg5Te3 : a new metal-rich telluride with a unique tunnel structure. / Li, Jing; Guo, Hong You; Zhang, Xiang; Kanatzidis, Mercouri G.

In: Journal of Alloys and Compounds, Vol. 218, No. 1, 15.02.1995, p. 1-4.

Research output: Contribution to journalArticle

@article{91039eca75a84cb0a07e2d899aa856ad,
title = "CsAg5Te3: a new metal-rich telluride with a unique tunnel structure",
abstract = "The synthesis and structure of a new ternary silver telluride, CsAg5Te3, is described. The compound was prepared from a Cs2TeCaTeTe flux but it can also be prepared from a direct combination of Cs2Te and Ag2Te under vacuum at 600 °C. The crystal data for CsAg5Te3 at 20 °C (Mo Kα radiation) are as follows: a = 14.672(2) A ̊ and c = 4.601(3) A ̊; V = 990.5(8) A ̊3; Z = 4; Dcalc = 7.075 g cm-3; space group, P42/mnm (No. 136); 2θmax = 50°; number of independent data collected, 572; number of data observed with I > 3σ(I), 267; number of variables, 32; μ = 218.51 cm-1; extinction coefficient, 0.585 × 10-7; final R = 0.040; Rw = 0.046; goodness of fit, 1.42. The compound features a new structure type with Cs+-filled, relatively large tunnels running through the lattice. The material is a semiconductor with a band gap of about 0.65 eV.",
keywords = "Semiconductors, Ternary silver telluride, Tunnel structure",
author = "Jing Li and Guo, {Hong You} and Xiang Zhang and Kanatzidis, {Mercouri G}",
year = "1995",
month = "2",
day = "15",
doi = "10.1016/0925-8388(94)01359-4",
language = "English",
volume = "218",
pages = "1--4",
journal = "Journal of Alloys and Compounds",
issn = "0925-8388",
publisher = "Elsevier BV",
number = "1",

}

TY - JOUR

T1 - CsAg5Te3

T2 - a new metal-rich telluride with a unique tunnel structure

AU - Li, Jing

AU - Guo, Hong You

AU - Zhang, Xiang

AU - Kanatzidis, Mercouri G

PY - 1995/2/15

Y1 - 1995/2/15

N2 - The synthesis and structure of a new ternary silver telluride, CsAg5Te3, is described. The compound was prepared from a Cs2TeCaTeTe flux but it can also be prepared from a direct combination of Cs2Te and Ag2Te under vacuum at 600 °C. The crystal data for CsAg5Te3 at 20 °C (Mo Kα radiation) are as follows: a = 14.672(2) A ̊ and c = 4.601(3) A ̊; V = 990.5(8) A ̊3; Z = 4; Dcalc = 7.075 g cm-3; space group, P42/mnm (No. 136); 2θmax = 50°; number of independent data collected, 572; number of data observed with I > 3σ(I), 267; number of variables, 32; μ = 218.51 cm-1; extinction coefficient, 0.585 × 10-7; final R = 0.040; Rw = 0.046; goodness of fit, 1.42. The compound features a new structure type with Cs+-filled, relatively large tunnels running through the lattice. The material is a semiconductor with a band gap of about 0.65 eV.

AB - The synthesis and structure of a new ternary silver telluride, CsAg5Te3, is described. The compound was prepared from a Cs2TeCaTeTe flux but it can also be prepared from a direct combination of Cs2Te and Ag2Te under vacuum at 600 °C. The crystal data for CsAg5Te3 at 20 °C (Mo Kα radiation) are as follows: a = 14.672(2) A ̊ and c = 4.601(3) A ̊; V = 990.5(8) A ̊3; Z = 4; Dcalc = 7.075 g cm-3; space group, P42/mnm (No. 136); 2θmax = 50°; number of independent data collected, 572; number of data observed with I > 3σ(I), 267; number of variables, 32; μ = 218.51 cm-1; extinction coefficient, 0.585 × 10-7; final R = 0.040; Rw = 0.046; goodness of fit, 1.42. The compound features a new structure type with Cs+-filled, relatively large tunnels running through the lattice. The material is a semiconductor with a band gap of about 0.65 eV.

KW - Semiconductors

KW - Ternary silver telluride

KW - Tunnel structure

UR - http://www.scopus.com/inward/record.url?scp=0039665365&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0039665365&partnerID=8YFLogxK

U2 - 10.1016/0925-8388(94)01359-4

DO - 10.1016/0925-8388(94)01359-4

M3 - Article

VL - 218

SP - 1

EP - 4

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

SN - 0925-8388

IS - 1

ER -