CsAg5Te3: a new metal-rich telluride with a unique tunnel structure

Jing Li; Hong You Guo; Xiang Zhang; Mercouri G Kanatzidis

doi:10.1016/0925-8388(94)01359-4

CsAg₅Te₃: a new metal-rich telluride with a unique tunnel structure

Jing Li, Hong You Guo, Xiang Zhang, Mercouri G Kanatzidis

Research output: Contribution to journal › Article

20 Citations (Scopus)

Abstract

The synthesis and structure of a new ternary silver telluride, CsAg₅Te₃, is described. The compound was prepared from a Cs₂TeCaTeTe flux but it can also be prepared from a direct combination of Cs₂Te and Ag₂Te under vacuum at 600 °C. The crystal data for CsAg₅Te₃ at 20 °C (Mo Kα radiation) are as follows: a = 14.672(2) A ̊ and c = 4.601(3) A ̊; V = 990.5(8) A ̊³; Z = 4; D_calc = 7.075 g cm^-3; space group, P4₂/mnm (No. 136); 2θ_max = 50°; number of independent data collected, 572; number of data observed with I > 3σ(I), 267; number of variables, 32; μ = 218.51 cm^-1; extinction coefficient, 0.585 × 10^-7; final R = 0.040; R_w = 0.046; goodness of fit, 1.42. The compound features a new structure type with Cs⁺-filled, relatively large tunnels running through the lattice. The material is a semiconductor with a band gap of about 0.65 eV.

Original language	English
Pages (from-to)	1-4
Number of pages	4
Journal	Journal of Alloys and Compounds
Volume	218
Issue number	1
DOIs	https://doi.org/10.1016/0925-8388(94)01359-4
Publication status	Published - Feb 15 1995

Fingerprint

Keywords

Semiconductors
Ternary silver telluride
Tunnel structure

ASJC Scopus subject areas

Mechanical Engineering
Mechanics of Materials
Materials Chemistry
Metals and Alloys

Cite this

Li, J., Guo, H. Y., Zhang, X., & Kanatzidis, M. G. (1995). CsAg₅Te₃: a new metal-rich telluride with a unique tunnel structure. Journal of Alloys and Compounds, 218(1), 1-4. https://doi.org/10.1016/0925-8388(94)01359-4

@article{91039eca75a84cb0a07e2d899aa856ad,

title = "CsAg5Te3: a new metal-rich telluride with a unique tunnel structure",

abstract = "The synthesis and structure of a new ternary silver telluride, CsAg5Te3, is described. The compound was prepared from a Cs2TeCaTeTe flux but it can also be prepared from a direct combination of Cs2Te and Ag2Te under vacuum at 600 °C. The crystal data for CsAg5Te3 at 20 °C (Mo Kα radiation) are as follows: a = 14.672(2) A ̊ and c = 4.601(3) A ̊; V = 990.5(8) A ̊3; Z = 4; Dcalc = 7.075 g cm-3; space group, P42/mnm (No. 136); 2θmax = 50°; number of independent data collected, 572; number of data observed with I > 3σ(I), 267; number of variables, 32; μ = 218.51 cm-1; extinction coefficient, 0.585 × 10-7; final R = 0.040; Rw = 0.046; goodness of fit, 1.42. The compound features a new structure type with Cs+-filled, relatively large tunnels running through the lattice. The material is a semiconductor with a band gap of about 0.65 eV.",

keywords = "Semiconductors, Ternary silver telluride, Tunnel structure",

author = "Jing Li and Guo, {Hong You} and Xiang Zhang and Kanatzidis, {Mercouri G}",

year = "1995",

month = "2",

day = "15",

doi = "10.1016/0925-8388(94)01359-4",

language = "English",

volume = "218",

pages = "1--4",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier BV",

number = "1",

}

TY - JOUR

T1 - CsAg5Te3

T2 - a new metal-rich telluride with a unique tunnel structure

AU - Li, Jing

AU - Guo, Hong You

AU - Zhang, Xiang

AU - Kanatzidis, Mercouri G

PY - 1995/2/15

Y1 - 1995/2/15

N2 - The synthesis and structure of a new ternary silver telluride, CsAg5Te3, is described. The compound was prepared from a Cs2TeCaTeTe flux but it can also be prepared from a direct combination of Cs2Te and Ag2Te under vacuum at 600 °C. The crystal data for CsAg5Te3 at 20 °C (Mo Kα radiation) are as follows: a = 14.672(2) A ̊ and c = 4.601(3) A ̊; V = 990.5(8) A ̊3; Z = 4; Dcalc = 7.075 g cm-3; space group, P42/mnm (No. 136); 2θmax = 50°; number of independent data collected, 572; number of data observed with I > 3σ(I), 267; number of variables, 32; μ = 218.51 cm-1; extinction coefficient, 0.585 × 10-7; final R = 0.040; Rw = 0.046; goodness of fit, 1.42. The compound features a new structure type with Cs+-filled, relatively large tunnels running through the lattice. The material is a semiconductor with a band gap of about 0.65 eV.

AB - The synthesis and structure of a new ternary silver telluride, CsAg5Te3, is described. The compound was prepared from a Cs2TeCaTeTe flux but it can also be prepared from a direct combination of Cs2Te and Ag2Te under vacuum at 600 °C. The crystal data for CsAg5Te3 at 20 °C (Mo Kα radiation) are as follows: a = 14.672(2) A ̊ and c = 4.601(3) A ̊; V = 990.5(8) A ̊3; Z = 4; Dcalc = 7.075 g cm-3; space group, P42/mnm (No. 136); 2θmax = 50°; number of independent data collected, 572; number of data observed with I > 3σ(I), 267; number of variables, 32; μ = 218.51 cm-1; extinction coefficient, 0.585 × 10-7; final R = 0.040; Rw = 0.046; goodness of fit, 1.42. The compound features a new structure type with Cs+-filled, relatively large tunnels running through the lattice. The material is a semiconductor with a band gap of about 0.65 eV.

KW - Semiconductors

KW - Ternary silver telluride

KW - Tunnel structure

UR - http://www.scopus.com/inward/record.url?scp=0039665365&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0039665365&partnerID=8YFLogxK

U2 - 10.1016/0925-8388(94)01359-4

DO - 10.1016/0925-8388(94)01359-4

M3 - Article

AN - SCOPUS:0039665365

VL - 218

SP - 1

EP - 4

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

SN - 0925-8388

IS - 1

ER -

Access to Document

10.1016/0925-8388(94)01359-4