Abstract
The synthesis and structure of a new ternary silver telluride, CsAg5Te3, is described. The compound was prepared from a Cs2TeCaTeTe flux but it can also be prepared from a direct combination of Cs2Te and Ag2Te under vacuum at 600 °C. The crystal data for CsAg5Te3 at 20 °C (Mo Kα radiation) are as follows: a = 14.672(2) A ̊ and c = 4.601(3) A ̊; V = 990.5(8) A ̊3; Z = 4; Dcalc = 7.075 g cm-3; space group, P42/mnm (No. 136); 2θmax = 50°; number of independent data collected, 572; number of data observed with I > 3σ(I), 267; number of variables, 32; μ = 218.51 cm-1; extinction coefficient, 0.585 × 10-7; final R = 0.040; Rw = 0.046; goodness of fit, 1.42. The compound features a new structure type with Cs+-filled, relatively large tunnels running through the lattice. The material is a semiconductor with a band gap of about 0.65 eV.
| Original language | English |
|---|---|
| Pages (from-to) | 1-4 |
| Number of pages | 4 |
| Journal | Journal of Alloys and Compounds |
| Volume | 218 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Feb 15 1995 |
Fingerprint
Keywords
- Semiconductors
- Ternary silver telluride
- Tunnel structure
ASJC Scopus subject areas
- Mechanical Engineering
- Mechanics of Materials
- Materials Chemistry
- Metals and Alloys
Cite this
CsAg5Te3 : a new metal-rich telluride with a unique tunnel structure. / Li, Jing; Guo, Hong You; Zhang, Xiang; Kanatzidis, Mercouri G.
In: Journal of Alloys and Compounds, Vol. 218, No. 1, 15.02.1995, p. 1-4.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - CsAg5Te3
T2 - a new metal-rich telluride with a unique tunnel structure
AU - Li, Jing
AU - Guo, Hong You
AU - Zhang, Xiang
AU - Kanatzidis, Mercouri G
PY - 1995/2/15
Y1 - 1995/2/15
N2 - The synthesis and structure of a new ternary silver telluride, CsAg5Te3, is described. The compound was prepared from a Cs2TeCaTeTe flux but it can also be prepared from a direct combination of Cs2Te and Ag2Te under vacuum at 600 °C. The crystal data for CsAg5Te3 at 20 °C (Mo Kα radiation) are as follows: a = 14.672(2) A ̊ and c = 4.601(3) A ̊; V = 990.5(8) A ̊3; Z = 4; Dcalc = 7.075 g cm-3; space group, P42/mnm (No. 136); 2θmax = 50°; number of independent data collected, 572; number of data observed with I > 3σ(I), 267; number of variables, 32; μ = 218.51 cm-1; extinction coefficient, 0.585 × 10-7; final R = 0.040; Rw = 0.046; goodness of fit, 1.42. The compound features a new structure type with Cs+-filled, relatively large tunnels running through the lattice. The material is a semiconductor with a band gap of about 0.65 eV.
AB - The synthesis and structure of a new ternary silver telluride, CsAg5Te3, is described. The compound was prepared from a Cs2TeCaTeTe flux but it can also be prepared from a direct combination of Cs2Te and Ag2Te under vacuum at 600 °C. The crystal data for CsAg5Te3 at 20 °C (Mo Kα radiation) are as follows: a = 14.672(2) A ̊ and c = 4.601(3) A ̊; V = 990.5(8) A ̊3; Z = 4; Dcalc = 7.075 g cm-3; space group, P42/mnm (No. 136); 2θmax = 50°; number of independent data collected, 572; number of data observed with I > 3σ(I), 267; number of variables, 32; μ = 218.51 cm-1; extinction coefficient, 0.585 × 10-7; final R = 0.040; Rw = 0.046; goodness of fit, 1.42. The compound features a new structure type with Cs+-filled, relatively large tunnels running through the lattice. The material is a semiconductor with a band gap of about 0.65 eV.
KW - Semiconductors
KW - Ternary silver telluride
KW - Tunnel structure
UR - http://www.scopus.com/inward/record.url?scp=0039665365&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0039665365&partnerID=8YFLogxK
U2 - 10.1016/0925-8388(94)01359-4
DO - 10.1016/0925-8388(94)01359-4
M3 - Article
AN - SCOPUS:0039665365
VL - 218
SP - 1
EP - 4
JO - Journal of Alloys and Compounds
JF - Journal of Alloys and Compounds
SN - 0925-8388
IS - 1
ER -