Abstract
The synthesis and structure of a new ternary silver telluride, CsAg5Te3, is described. The compound was prepared from a Cs2TeCaTeTe flux but it can also be prepared from a direct combination of Cs2Te and Ag2Te under vacuum at 600 °C. The crystal data for CsAg5Te3 at 20 °C (Mo Kα radiation) are as follows: a = 14.672(2) A ̊ and c = 4.601(3) A ̊; V = 990.5(8) A ̊3; Z = 4; Dcalc = 7.075 g cm-3; space group, P42/mnm (No. 136); 2θmax = 50°; number of independent data collected, 572; number of data observed with I > 3σ(I), 267; number of variables, 32; μ = 218.51 cm-1; extinction coefficient, 0.585 × 10-7; final R = 0.040; Rw = 0.046; goodness of fit, 1.42. The compound features a new structure type with Cs+-filled, relatively large tunnels running through the lattice. The material is a semiconductor with a band gap of about 0.65 eV.
Original language | English |
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Pages (from-to) | 1-4 |
Number of pages | 4 |
Journal | Journal of Alloys and Compounds |
Volume | 218 |
Issue number | 1 |
DOIs | |
Publication status | Published - Feb 15 1995 |
Keywords
- Semiconductors
- Ternary silver telluride
- Tunnel structure
ASJC Scopus subject areas
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry