CsCdInQ3 (Q = Se, Te)

New photoconductive compounds as potential materials for hard radiation detection

Hao Li, Christos D. Malliakas, John A. Peters, Zhifu Liu, Jino Im, Hosub Jin, Collin D. Morris, Li Dong Zhao, Bruce W. Wessels, Arthur J Freeman, Mercouri G Kanatzidis

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Two new compounds CsCdInQ3 (Q = Se, Te) have been synthesized using a polychalcogenide flux. CsCdInQ3 (Q = Se, Te) crystals are promising candidates for X-ray and γ-ray detection. The compounds crystallize in the monoclinic C2/c space group with a layered structure, which is related to the CsInQ2 (Q = Se, Te) ternary compounds. The cell parameters are: a = 11.708(2) Å, b = 11.712(2) Å, c = 23.051(5) Å, β = 97.28(3) for CsCdInSe3 and a = 12.523(3) Å, b = 12.517(3) Å, c = 24.441(5) Å, β = 97.38(3) for CsCdInTe 3. Both the Se and Te analogues are wide-band-gap semiconductors with optical band gaps of 2.4 and 1.78 eV for CsCdInSe3 and CsCdInTe 3, respectively. High-purity polycrystalline raw material for crystal growth was synthesized by the vapor transfer method for CsCdInQ3. Large single crystals up to 1 cm have been grown using the vertical Bridgman method and exhibit photoconductive response. The electrical resistivity of the crystals is highly anisotropic. The electronic structure calculation within the density functional theory (DFT) framework indicates a small effective mass for the carriers. Photoconductivity measurements on the as grown CsCdInQ3 crystals gives high carrier mobility-lifetime (μτ) products comparable to other detector materials such as α-HgI2, PbI2, and CdxZn1-xTe (CZT).

Original languageEnglish
Pages (from-to)2089-2099
Number of pages11
JournalChemistry of Materials
Volume25
Issue number10
DOIs
Publication statusPublished - May 28 2013

Fingerprint

Radiation
Crystals
Polycrystalline materials
Crystal growth from melt
Carrier mobility
Optical band gaps
Photoconductivity
Crystallization
Crystal growth
Electronic structure
Density functional theory
Raw materials
Vapors
Single crystals
Fluxes
Detectors
X rays
Wide band gap semiconductors
red mercuric iodide

Keywords

  • chalcogenide
  • crystal growth
  • hard radiation detection
  • photoconductivity

ASJC Scopus subject areas

  • Materials Chemistry
  • Chemical Engineering(all)
  • Chemistry(all)

Cite this

CsCdInQ3 (Q = Se, Te) : New photoconductive compounds as potential materials for hard radiation detection. / Li, Hao; Malliakas, Christos D.; Peters, John A.; Liu, Zhifu; Im, Jino; Jin, Hosub; Morris, Collin D.; Zhao, Li Dong; Wessels, Bruce W.; Freeman, Arthur J; Kanatzidis, Mercouri G.

In: Chemistry of Materials, Vol. 25, No. 10, 28.05.2013, p. 2089-2099.

Research output: Contribution to journalArticle

Li, H, Malliakas, CD, Peters, JA, Liu, Z, Im, J, Jin, H, Morris, CD, Zhao, LD, Wessels, BW, Freeman, AJ & Kanatzidis, MG 2013, 'CsCdInQ3 (Q = Se, Te): New photoconductive compounds as potential materials for hard radiation detection', Chemistry of Materials, vol. 25, no. 10, pp. 2089-2099. https://doi.org/10.1021/cm400634v
Li, Hao ; Malliakas, Christos D. ; Peters, John A. ; Liu, Zhifu ; Im, Jino ; Jin, Hosub ; Morris, Collin D. ; Zhao, Li Dong ; Wessels, Bruce W. ; Freeman, Arthur J ; Kanatzidis, Mercouri G. / CsCdInQ3 (Q = Se, Te) : New photoconductive compounds as potential materials for hard radiation detection. In: Chemistry of Materials. 2013 ; Vol. 25, No. 10. pp. 2089-2099.
@article{915f117e1ff14399bc20b031302313b9,
title = "CsCdInQ3 (Q = Se, Te): New photoconductive compounds as potential materials for hard radiation detection",
abstract = "Two new compounds CsCdInQ3 (Q = Se, Te) have been synthesized using a polychalcogenide flux. CsCdInQ3 (Q = Se, Te) crystals are promising candidates for X-ray and γ-ray detection. The compounds crystallize in the monoclinic C2/c space group with a layered structure, which is related to the CsInQ2 (Q = Se, Te) ternary compounds. The cell parameters are: a = 11.708(2) {\AA}, b = 11.712(2) {\AA}, c = 23.051(5) {\AA}, β = 97.28(3) for CsCdInSe3 and a = 12.523(3) {\AA}, b = 12.517(3) {\AA}, c = 24.441(5) {\AA}, β = 97.38(3) for CsCdInTe 3. Both the Se and Te analogues are wide-band-gap semiconductors with optical band gaps of 2.4 and 1.78 eV for CsCdInSe3 and CsCdInTe 3, respectively. High-purity polycrystalline raw material for crystal growth was synthesized by the vapor transfer method for CsCdInQ3. Large single crystals up to 1 cm have been grown using the vertical Bridgman method and exhibit photoconductive response. The electrical resistivity of the crystals is highly anisotropic. The electronic structure calculation within the density functional theory (DFT) framework indicates a small effective mass for the carriers. Photoconductivity measurements on the as grown CsCdInQ3 crystals gives high carrier mobility-lifetime (μτ) products comparable to other detector materials such as α-HgI2, PbI2, and CdxZn1-xTe (CZT).",
keywords = "chalcogenide, crystal growth, hard radiation detection, photoconductivity",
author = "Hao Li and Malliakas, {Christos D.} and Peters, {John A.} and Zhifu Liu and Jino Im and Hosub Jin and Morris, {Collin D.} and Zhao, {Li Dong} and Wessels, {Bruce W.} and Freeman, {Arthur J} and Kanatzidis, {Mercouri G}",
year = "2013",
month = "5",
day = "28",
doi = "10.1021/cm400634v",
language = "English",
volume = "25",
pages = "2089--2099",
journal = "Chemistry of Materials",
issn = "0897-4756",
publisher = "American Chemical Society",
number = "10",

}

TY - JOUR

T1 - CsCdInQ3 (Q = Se, Te)

T2 - New photoconductive compounds as potential materials for hard radiation detection

AU - Li, Hao

AU - Malliakas, Christos D.

AU - Peters, John A.

AU - Liu, Zhifu

AU - Im, Jino

AU - Jin, Hosub

AU - Morris, Collin D.

AU - Zhao, Li Dong

AU - Wessels, Bruce W.

AU - Freeman, Arthur J

AU - Kanatzidis, Mercouri G

PY - 2013/5/28

Y1 - 2013/5/28

N2 - Two new compounds CsCdInQ3 (Q = Se, Te) have been synthesized using a polychalcogenide flux. CsCdInQ3 (Q = Se, Te) crystals are promising candidates for X-ray and γ-ray detection. The compounds crystallize in the monoclinic C2/c space group with a layered structure, which is related to the CsInQ2 (Q = Se, Te) ternary compounds. The cell parameters are: a = 11.708(2) Å, b = 11.712(2) Å, c = 23.051(5) Å, β = 97.28(3) for CsCdInSe3 and a = 12.523(3) Å, b = 12.517(3) Å, c = 24.441(5) Å, β = 97.38(3) for CsCdInTe 3. Both the Se and Te analogues are wide-band-gap semiconductors with optical band gaps of 2.4 and 1.78 eV for CsCdInSe3 and CsCdInTe 3, respectively. High-purity polycrystalline raw material for crystal growth was synthesized by the vapor transfer method for CsCdInQ3. Large single crystals up to 1 cm have been grown using the vertical Bridgman method and exhibit photoconductive response. The electrical resistivity of the crystals is highly anisotropic. The electronic structure calculation within the density functional theory (DFT) framework indicates a small effective mass for the carriers. Photoconductivity measurements on the as grown CsCdInQ3 crystals gives high carrier mobility-lifetime (μτ) products comparable to other detector materials such as α-HgI2, PbI2, and CdxZn1-xTe (CZT).

AB - Two new compounds CsCdInQ3 (Q = Se, Te) have been synthesized using a polychalcogenide flux. CsCdInQ3 (Q = Se, Te) crystals are promising candidates for X-ray and γ-ray detection. The compounds crystallize in the monoclinic C2/c space group with a layered structure, which is related to the CsInQ2 (Q = Se, Te) ternary compounds. The cell parameters are: a = 11.708(2) Å, b = 11.712(2) Å, c = 23.051(5) Å, β = 97.28(3) for CsCdInSe3 and a = 12.523(3) Å, b = 12.517(3) Å, c = 24.441(5) Å, β = 97.38(3) for CsCdInTe 3. Both the Se and Te analogues are wide-band-gap semiconductors with optical band gaps of 2.4 and 1.78 eV for CsCdInSe3 and CsCdInTe 3, respectively. High-purity polycrystalline raw material for crystal growth was synthesized by the vapor transfer method for CsCdInQ3. Large single crystals up to 1 cm have been grown using the vertical Bridgman method and exhibit photoconductive response. The electrical resistivity of the crystals is highly anisotropic. The electronic structure calculation within the density functional theory (DFT) framework indicates a small effective mass for the carriers. Photoconductivity measurements on the as grown CsCdInQ3 crystals gives high carrier mobility-lifetime (μτ) products comparable to other detector materials such as α-HgI2, PbI2, and CdxZn1-xTe (CZT).

KW - chalcogenide

KW - crystal growth

KW - hard radiation detection

KW - photoconductivity

UR - http://www.scopus.com/inward/record.url?scp=84878286999&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84878286999&partnerID=8YFLogxK

U2 - 10.1021/cm400634v

DO - 10.1021/cm400634v

M3 - Article

VL - 25

SP - 2089

EP - 2099

JO - Chemistry of Materials

JF - Chemistry of Materials

SN - 0897-4756

IS - 10

ER -