CsCu5Se3: A Copper-Rich Ternary Chalcogenide Semiconductor with Nearly Direct Band Gap for Photovoltaic Application

Zhiguo Xia, Huajing Fang, Xiuwen Zhang, Maxim S. Molokeev, Romain Gautier, Qingfeng Yan, Su Huai Wei, Kenneth R. Poeppelmeier

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Discovery of new semiconductor candidates with suitable band gaps is a challenge for optoelectronic application. A facile solvothermal synthesis of a new ternary chalcogenide semiconductor CsCu5Se3 is reported. The telluride CsCu5Te3 is also predicted to be stable. CsCu5Se3 is isostructural with CsCu5S3 (space group Pmma). The band gap calculations of these chalcogenide semiconductors using hybrid density functional theory indicate nearly direct band gaps, and their values (about 1.4 eV) were confirmed by the optical absorption spectroscopy. These alkali metal copper chalcogenides are interesting examples of copper-rich structures which are commonly associated with favorable photovoltaic application.

Original languageEnglish
Pages (from-to)1121-1126
Number of pages6
JournalChemistry of Materials
Volume30
Issue number3
DOIs
Publication statusPublished - Feb 13 2018

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Copper
Energy gap
Semiconductor materials
Alkali Metals
Chalcogenides
Alkali metals
Absorption spectroscopy
Optoelectronic devices
Light absorption
Density functional theory

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

Cite this

CsCu5Se3 : A Copper-Rich Ternary Chalcogenide Semiconductor with Nearly Direct Band Gap for Photovoltaic Application. / Xia, Zhiguo; Fang, Huajing; Zhang, Xiuwen; Molokeev, Maxim S.; Gautier, Romain; Yan, Qingfeng; Wei, Su Huai; Poeppelmeier, Kenneth R.

In: Chemistry of Materials, Vol. 30, No. 3, 13.02.2018, p. 1121-1126.

Research output: Contribution to journalArticle

Xia, Zhiguo ; Fang, Huajing ; Zhang, Xiuwen ; Molokeev, Maxim S. ; Gautier, Romain ; Yan, Qingfeng ; Wei, Su Huai ; Poeppelmeier, Kenneth R. / CsCu5Se3 : A Copper-Rich Ternary Chalcogenide Semiconductor with Nearly Direct Band Gap for Photovoltaic Application. In: Chemistry of Materials. 2018 ; Vol. 30, No. 3. pp. 1121-1126.
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