Abstract
The new layered compound CsHgInS3 was synthesized using solid state and flux synthesis techniques. The compound is a semiconductor and shows promising properties for X-ray and γray detection. It features a layered structure that crystallizes in the monoclinic space group C2/c with cell parameters: a = 11.2499(7) Å, b = 11.2565(6) Å, c = 22.146(1) Å, β = 97.30(5)°, V = 2781.8(4) Å3, and Z = 8. CsHgInS3 is isostructural to Rb2Cu2Sn 2S6, where the Hg, In, and Cs atoms occupy the Cu, Sn, and Rb sites, respectively. Large single crystals with dimension up to 5 mm were grown with a vertical Bridgman method as well as a horizontal traveling heater method. CsHgInS3 has a γray attenuation length comparable to commercial Cd1-xZnxTe and a band gap value of 2.30 eV. The electrical resistivity of CsHgInS3 is anisotropic with values of 98 Gω cm and 0.33 Gω cm perpendicular and parallel to the (001) plane, respectively. The mobility-lifetime product (μτ) of electrons and holes estimated from photoconductivity measurements on the as-grown crystals were (μτ)e = 3.6 × 10-5 cm2 V -1 and (μτ)h = 2.9 × 10-5 cm 2 V-1, respectively. Electronic structure calculations at the Density Functional Theory level were performed based on the refined crystal structure of CsHgInS3 and show a direct gap with the conduction band near the Fermi level being highly dispersive, suggesting a relatively small carrier effective mass for electrons.
| Original language | English |
|---|---|
| Pages (from-to) | 4434-4441 |
| Number of pages | 8 |
| Journal | Chemistry of Materials |
| Volume | 24 |
| Issue number | 22 |
| DOIs | |
| Publication status | Published - Nov 27 2012 |
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Keywords
- chalcogenide
- crystal growth
- semiconductors
- X-ray detection
ASJC Scopus subject areas
- Materials Chemistry
- Chemical Engineering(all)
- Chemistry(all)
Cite this
CsHgInS3 : A new quaternary semiconductor for γray detection. / Li, Hao; Malliakas, Christos D.; Liu, Zhifu; Peters, John A.; Jin, Hosub; Morris, Collin D.; Zhao, Lidong; Wessels, Bruce W.; Freeman, Arthur J; Kanatzidis, Mercouri G.
In: Chemistry of Materials, Vol. 24, No. 22, 27.11.2012, p. 4434-4441.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - CsHgInS3
T2 - A new quaternary semiconductor for γray detection
AU - Li, Hao
AU - Malliakas, Christos D.
AU - Liu, Zhifu
AU - Peters, John A.
AU - Jin, Hosub
AU - Morris, Collin D.
AU - Zhao, Lidong
AU - Wessels, Bruce W.
AU - Freeman, Arthur J
AU - Kanatzidis, Mercouri G
PY - 2012/11/27
Y1 - 2012/11/27
N2 - The new layered compound CsHgInS3 was synthesized using solid state and flux synthesis techniques. The compound is a semiconductor and shows promising properties for X-ray and γray detection. It features a layered structure that crystallizes in the monoclinic space group C2/c with cell parameters: a = 11.2499(7) Å, b = 11.2565(6) Å, c = 22.146(1) Å, β = 97.30(5)°, V = 2781.8(4) Å3, and Z = 8. CsHgInS3 is isostructural to Rb2Cu2Sn 2S6, where the Hg, In, and Cs atoms occupy the Cu, Sn, and Rb sites, respectively. Large single crystals with dimension up to 5 mm were grown with a vertical Bridgman method as well as a horizontal traveling heater method. CsHgInS3 has a γray attenuation length comparable to commercial Cd1-xZnxTe and a band gap value of 2.30 eV. The electrical resistivity of CsHgInS3 is anisotropic with values of 98 Gω cm and 0.33 Gω cm perpendicular and parallel to the (001) plane, respectively. The mobility-lifetime product (μτ) of electrons and holes estimated from photoconductivity measurements on the as-grown crystals were (μτ)e = 3.6 × 10-5 cm2 V -1 and (μτ)h = 2.9 × 10-5 cm 2 V-1, respectively. Electronic structure calculations at the Density Functional Theory level were performed based on the refined crystal structure of CsHgInS3 and show a direct gap with the conduction band near the Fermi level being highly dispersive, suggesting a relatively small carrier effective mass for electrons.
AB - The new layered compound CsHgInS3 was synthesized using solid state and flux synthesis techniques. The compound is a semiconductor and shows promising properties for X-ray and γray detection. It features a layered structure that crystallizes in the monoclinic space group C2/c with cell parameters: a = 11.2499(7) Å, b = 11.2565(6) Å, c = 22.146(1) Å, β = 97.30(5)°, V = 2781.8(4) Å3, and Z = 8. CsHgInS3 is isostructural to Rb2Cu2Sn 2S6, where the Hg, In, and Cs atoms occupy the Cu, Sn, and Rb sites, respectively. Large single crystals with dimension up to 5 mm were grown with a vertical Bridgman method as well as a horizontal traveling heater method. CsHgInS3 has a γray attenuation length comparable to commercial Cd1-xZnxTe and a band gap value of 2.30 eV. The electrical resistivity of CsHgInS3 is anisotropic with values of 98 Gω cm and 0.33 Gω cm perpendicular and parallel to the (001) plane, respectively. The mobility-lifetime product (μτ) of electrons and holes estimated from photoconductivity measurements on the as-grown crystals were (μτ)e = 3.6 × 10-5 cm2 V -1 and (μτ)h = 2.9 × 10-5 cm 2 V-1, respectively. Electronic structure calculations at the Density Functional Theory level were performed based on the refined crystal structure of CsHgInS3 and show a direct gap with the conduction band near the Fermi level being highly dispersive, suggesting a relatively small carrier effective mass for electrons.
KW - chalcogenide
KW - crystal growth
KW - semiconductors
KW - X-ray detection
UR - http://www.scopus.com/inward/record.url?scp=84870155586&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84870155586&partnerID=8YFLogxK
U2 - 10.1021/cm302838v
DO - 10.1021/cm302838v
M3 - Article
VL - 24
SP - 4434
EP - 4441
JO - Chemistry of Materials
JF - Chemistry of Materials
SN - 0897-4756
IS - 22
ER -