CsHgInS3

A new quaternary semiconductor for γray detection

Hao Li, Christos D. Malliakas, Zhifu Liu, John A. Peters, Hosub Jin, Collin D. Morris, Lidong Zhao, Bruce W. Wessels, Arthur J Freeman, Mercouri G Kanatzidis

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

The new layered compound CsHgInS3 was synthesized using solid state and flux synthesis techniques. The compound is a semiconductor and shows promising properties for X-ray and γray detection. It features a layered structure that crystallizes in the monoclinic space group C2/c with cell parameters: a = 11.2499(7) Å, b = 11.2565(6) Å, c = 22.146(1) Å, β = 97.30(5)°, V = 2781.8(4) Å3, and Z = 8. CsHgInS3 is isostructural to Rb2Cu2Sn 2S6, where the Hg, In, and Cs atoms occupy the Cu, Sn, and Rb sites, respectively. Large single crystals with dimension up to 5 mm were grown with a vertical Bridgman method as well as a horizontal traveling heater method. CsHgInS3 has a γray attenuation length comparable to commercial Cd1-xZnxTe and a band gap value of 2.30 eV. The electrical resistivity of CsHgInS3 is anisotropic with values of 98 Gω cm and 0.33 Gω cm perpendicular and parallel to the (001) plane, respectively. The mobility-lifetime product (μτ) of electrons and holes estimated from photoconductivity measurements on the as-grown crystals were (μτ)e = 3.6 × 10-5 cm2 V -1 and (μτ)h = 2.9 × 10-5 cm 2 V-1, respectively. Electronic structure calculations at the Density Functional Theory level were performed based on the refined crystal structure of CsHgInS3 and show a direct gap with the conduction band near the Fermi level being highly dispersive, suggesting a relatively small carrier effective mass for electrons.

Original languageEnglish
Pages (from-to)4434-4441
Number of pages8
JournalChemistry of Materials
Volume24
Issue number22
DOIs
Publication statusPublished - Nov 27 2012

Fingerprint

Semiconductor materials
Crystal growth from melt
Electrons
Photoconductivity
Fermi level
Conduction bands
Electronic structure
Density functional theory
Energy gap
Crystal structure
Single crystals
Fluxes
X rays
Atoms
Crystals

Keywords

  • chalcogenide
  • crystal growth
  • semiconductors
  • X-ray detection

ASJC Scopus subject areas

  • Materials Chemistry
  • Chemical Engineering(all)
  • Chemistry(all)

Cite this

Li, H., Malliakas, C. D., Liu, Z., Peters, J. A., Jin, H., Morris, C. D., ... Kanatzidis, M. G. (2012). CsHgInS3: A new quaternary semiconductor for γray detection. Chemistry of Materials, 24(22), 4434-4441. https://doi.org/10.1021/cm302838v

CsHgInS3 : A new quaternary semiconductor for γray detection. / Li, Hao; Malliakas, Christos D.; Liu, Zhifu; Peters, John A.; Jin, Hosub; Morris, Collin D.; Zhao, Lidong; Wessels, Bruce W.; Freeman, Arthur J; Kanatzidis, Mercouri G.

In: Chemistry of Materials, Vol. 24, No. 22, 27.11.2012, p. 4434-4441.

Research output: Contribution to journalArticle

Li, H, Malliakas, CD, Liu, Z, Peters, JA, Jin, H, Morris, CD, Zhao, L, Wessels, BW, Freeman, AJ & Kanatzidis, MG 2012, 'CsHgInS3: A new quaternary semiconductor for γray detection', Chemistry of Materials, vol. 24, no. 22, pp. 4434-4441. https://doi.org/10.1021/cm302838v
Li H, Malliakas CD, Liu Z, Peters JA, Jin H, Morris CD et al. CsHgInS3: A new quaternary semiconductor for γray detection. Chemistry of Materials. 2012 Nov 27;24(22):4434-4441. https://doi.org/10.1021/cm302838v
Li, Hao ; Malliakas, Christos D. ; Liu, Zhifu ; Peters, John A. ; Jin, Hosub ; Morris, Collin D. ; Zhao, Lidong ; Wessels, Bruce W. ; Freeman, Arthur J ; Kanatzidis, Mercouri G. / CsHgInS3 : A new quaternary semiconductor for γray detection. In: Chemistry of Materials. 2012 ; Vol. 24, No. 22. pp. 4434-4441.
@article{dda9997bbe94456699816b67facce3d3,
title = "CsHgInS3: A new quaternary semiconductor for γray detection",
abstract = "The new layered compound CsHgInS3 was synthesized using solid state and flux synthesis techniques. The compound is a semiconductor and shows promising properties for X-ray and γray detection. It features a layered structure that crystallizes in the monoclinic space group C2/c with cell parameters: a = 11.2499(7) {\AA}, b = 11.2565(6) {\AA}, c = 22.146(1) {\AA}, β = 97.30(5)°, V = 2781.8(4) {\AA}3, and Z = 8. CsHgInS3 is isostructural to Rb2Cu2Sn 2S6, where the Hg, In, and Cs atoms occupy the Cu, Sn, and Rb sites, respectively. Large single crystals with dimension up to 5 mm were grown with a vertical Bridgman method as well as a horizontal traveling heater method. CsHgInS3 has a γray attenuation length comparable to commercial Cd1-xZnxTe and a band gap value of 2.30 eV. The electrical resistivity of CsHgInS3 is anisotropic with values of 98 Gω cm and 0.33 Gω cm perpendicular and parallel to the (001) plane, respectively. The mobility-lifetime product (μτ) of electrons and holes estimated from photoconductivity measurements on the as-grown crystals were (μτ)e = 3.6 × 10-5 cm2 V -1 and (μτ)h = 2.9 × 10-5 cm 2 V-1, respectively. Electronic structure calculations at the Density Functional Theory level were performed based on the refined crystal structure of CsHgInS3 and show a direct gap with the conduction band near the Fermi level being highly dispersive, suggesting a relatively small carrier effective mass for electrons.",
keywords = "chalcogenide, crystal growth, semiconductors, X-ray detection",
author = "Hao Li and Malliakas, {Christos D.} and Zhifu Liu and Peters, {John A.} and Hosub Jin and Morris, {Collin D.} and Lidong Zhao and Wessels, {Bruce W.} and Freeman, {Arthur J} and Kanatzidis, {Mercouri G}",
year = "2012",
month = "11",
day = "27",
doi = "10.1021/cm302838v",
language = "English",
volume = "24",
pages = "4434--4441",
journal = "Chemistry of Materials",
issn = "0897-4756",
publisher = "American Chemical Society",
number = "22",

}

TY - JOUR

T1 - CsHgInS3

T2 - A new quaternary semiconductor for γray detection

AU - Li, Hao

AU - Malliakas, Christos D.

AU - Liu, Zhifu

AU - Peters, John A.

AU - Jin, Hosub

AU - Morris, Collin D.

AU - Zhao, Lidong

AU - Wessels, Bruce W.

AU - Freeman, Arthur J

AU - Kanatzidis, Mercouri G

PY - 2012/11/27

Y1 - 2012/11/27

N2 - The new layered compound CsHgInS3 was synthesized using solid state and flux synthesis techniques. The compound is a semiconductor and shows promising properties for X-ray and γray detection. It features a layered structure that crystallizes in the monoclinic space group C2/c with cell parameters: a = 11.2499(7) Å, b = 11.2565(6) Å, c = 22.146(1) Å, β = 97.30(5)°, V = 2781.8(4) Å3, and Z = 8. CsHgInS3 is isostructural to Rb2Cu2Sn 2S6, where the Hg, In, and Cs atoms occupy the Cu, Sn, and Rb sites, respectively. Large single crystals with dimension up to 5 mm were grown with a vertical Bridgman method as well as a horizontal traveling heater method. CsHgInS3 has a γray attenuation length comparable to commercial Cd1-xZnxTe and a band gap value of 2.30 eV. The electrical resistivity of CsHgInS3 is anisotropic with values of 98 Gω cm and 0.33 Gω cm perpendicular and parallel to the (001) plane, respectively. The mobility-lifetime product (μτ) of electrons and holes estimated from photoconductivity measurements on the as-grown crystals were (μτ)e = 3.6 × 10-5 cm2 V -1 and (μτ)h = 2.9 × 10-5 cm 2 V-1, respectively. Electronic structure calculations at the Density Functional Theory level were performed based on the refined crystal structure of CsHgInS3 and show a direct gap with the conduction band near the Fermi level being highly dispersive, suggesting a relatively small carrier effective mass for electrons.

AB - The new layered compound CsHgInS3 was synthesized using solid state and flux synthesis techniques. The compound is a semiconductor and shows promising properties for X-ray and γray detection. It features a layered structure that crystallizes in the monoclinic space group C2/c with cell parameters: a = 11.2499(7) Å, b = 11.2565(6) Å, c = 22.146(1) Å, β = 97.30(5)°, V = 2781.8(4) Å3, and Z = 8. CsHgInS3 is isostructural to Rb2Cu2Sn 2S6, where the Hg, In, and Cs atoms occupy the Cu, Sn, and Rb sites, respectively. Large single crystals with dimension up to 5 mm were grown with a vertical Bridgman method as well as a horizontal traveling heater method. CsHgInS3 has a γray attenuation length comparable to commercial Cd1-xZnxTe and a band gap value of 2.30 eV. The electrical resistivity of CsHgInS3 is anisotropic with values of 98 Gω cm and 0.33 Gω cm perpendicular and parallel to the (001) plane, respectively. The mobility-lifetime product (μτ) of electrons and holes estimated from photoconductivity measurements on the as-grown crystals were (μτ)e = 3.6 × 10-5 cm2 V -1 and (μτ)h = 2.9 × 10-5 cm 2 V-1, respectively. Electronic structure calculations at the Density Functional Theory level were performed based on the refined crystal structure of CsHgInS3 and show a direct gap with the conduction band near the Fermi level being highly dispersive, suggesting a relatively small carrier effective mass for electrons.

KW - chalcogenide

KW - crystal growth

KW - semiconductors

KW - X-ray detection

UR - http://www.scopus.com/inward/record.url?scp=84870155586&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84870155586&partnerID=8YFLogxK

U2 - 10.1021/cm302838v

DO - 10.1021/cm302838v

M3 - Article

VL - 24

SP - 4434

EP - 4441

JO - Chemistry of Materials

JF - Chemistry of Materials

SN - 0897-4756

IS - 22

ER -