Cubic AgPbmSbTe2+m: Bulk Thermoelectric Materials with High Figure of Merit

Kuei Fang Hsu, Sim Loo, Fu Guo, Wei Chen, Jeffrey S. Dyck, Ctirad Uher, Tim Hogan, E. K. Polychroniadis, Mercouri G Kanatzidis

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Abstract

The conversion of heat to electricity by thermoelectric devices may play a key role in the future for energy production and utilization. However, in order to meet that role, more efficient thermoelectric materials are needed that are suitable for high-temperature applications. We show that the material system AgPbmSbTe2+m may be suitable for this purpose. With m = 10 and 18 and doped appropriately, n-type semiconductors can be produced that exhibit a high thermoelectric figure of merit material ZTmax of ∼2.2 at 800 kelvin. In the temperature range 600 to 900 kelvin, the AgPbmSbTe2+m material is expected to outperform all reported bulk thermoelectrics, thereby earmarking it as a material system for potential use in efficient thermoelectric power generation from heat sources.

Original languageEnglish
Pages (from-to)818-821
Number of pages4
JournalScience
Volume303
Issue number5659
DOIs
Publication statusPublished - Feb 6 2004

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thermoelectric materials
figure of merit
thermoelectric power generation
n-type semiconductors
heat sources
electricity
heat
temperature
energy

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Cubic AgPbmSbTe2+m : Bulk Thermoelectric Materials with High Figure of Merit. / Hsu, Kuei Fang; Loo, Sim; Guo, Fu; Chen, Wei; Dyck, Jeffrey S.; Uher, Ctirad; Hogan, Tim; Polychroniadis, E. K.; Kanatzidis, Mercouri G.

In: Science, Vol. 303, No. 5659, 06.02.2004, p. 818-821.

Research output: Contribution to journalArticle

Hsu, KF, Loo, S, Guo, F, Chen, W, Dyck, JS, Uher, C, Hogan, T, Polychroniadis, EK & Kanatzidis, MG 2004, 'Cubic AgPbmSbTe2+m: Bulk Thermoelectric Materials with High Figure of Merit', Science, vol. 303, no. 5659, pp. 818-821. https://doi.org/10.1126/science.1092963
Hsu KF, Loo S, Guo F, Chen W, Dyck JS, Uher C et al. Cubic AgPbmSbTe2+m: Bulk Thermoelectric Materials with High Figure of Merit. Science. 2004 Feb 6;303(5659):818-821. https://doi.org/10.1126/science.1092963
Hsu, Kuei Fang ; Loo, Sim ; Guo, Fu ; Chen, Wei ; Dyck, Jeffrey S. ; Uher, Ctirad ; Hogan, Tim ; Polychroniadis, E. K. ; Kanatzidis, Mercouri G. / Cubic AgPbmSbTe2+m : Bulk Thermoelectric Materials with High Figure of Merit. In: Science. 2004 ; Vol. 303, No. 5659. pp. 818-821.
@article{2cd43e878cba4b72b5ef2a74936716b2,
title = "Cubic AgPbmSbTe2+m: Bulk Thermoelectric Materials with High Figure of Merit",
abstract = "The conversion of heat to electricity by thermoelectric devices may play a key role in the future for energy production and utilization. However, in order to meet that role, more efficient thermoelectric materials are needed that are suitable for high-temperature applications. We show that the material system AgPbmSbTe2+m may be suitable for this purpose. With m = 10 and 18 and doped appropriately, n-type semiconductors can be produced that exhibit a high thermoelectric figure of merit material ZTmax of ∼2.2 at 800 kelvin. In the temperature range 600 to 900 kelvin, the AgPbmSbTe2+m material is expected to outperform all reported bulk thermoelectrics, thereby earmarking it as a material system for potential use in efficient thermoelectric power generation from heat sources.",
author = "Hsu, {Kuei Fang} and Sim Loo and Fu Guo and Wei Chen and Dyck, {Jeffrey S.} and Ctirad Uher and Tim Hogan and Polychroniadis, {E. K.} and Kanatzidis, {Mercouri G}",
year = "2004",
month = "2",
day = "6",
doi = "10.1126/science.1092963",
language = "English",
volume = "303",
pages = "818--821",
journal = "Science",
issn = "0036-8075",
publisher = "American Association for the Advancement of Science",
number = "5659",

}

TY - JOUR

T1 - Cubic AgPbmSbTe2+m

T2 - Bulk Thermoelectric Materials with High Figure of Merit

AU - Hsu, Kuei Fang

AU - Loo, Sim

AU - Guo, Fu

AU - Chen, Wei

AU - Dyck, Jeffrey S.

AU - Uher, Ctirad

AU - Hogan, Tim

AU - Polychroniadis, E. K.

AU - Kanatzidis, Mercouri G

PY - 2004/2/6

Y1 - 2004/2/6

N2 - The conversion of heat to electricity by thermoelectric devices may play a key role in the future for energy production and utilization. However, in order to meet that role, more efficient thermoelectric materials are needed that are suitable for high-temperature applications. We show that the material system AgPbmSbTe2+m may be suitable for this purpose. With m = 10 and 18 and doped appropriately, n-type semiconductors can be produced that exhibit a high thermoelectric figure of merit material ZTmax of ∼2.2 at 800 kelvin. In the temperature range 600 to 900 kelvin, the AgPbmSbTe2+m material is expected to outperform all reported bulk thermoelectrics, thereby earmarking it as a material system for potential use in efficient thermoelectric power generation from heat sources.

AB - The conversion of heat to electricity by thermoelectric devices may play a key role in the future for energy production and utilization. However, in order to meet that role, more efficient thermoelectric materials are needed that are suitable for high-temperature applications. We show that the material system AgPbmSbTe2+m may be suitable for this purpose. With m = 10 and 18 and doped appropriately, n-type semiconductors can be produced that exhibit a high thermoelectric figure of merit material ZTmax of ∼2.2 at 800 kelvin. In the temperature range 600 to 900 kelvin, the AgPbmSbTe2+m material is expected to outperform all reported bulk thermoelectrics, thereby earmarking it as a material system for potential use in efficient thermoelectric power generation from heat sources.

UR - http://www.scopus.com/inward/record.url?scp=0842331448&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0842331448&partnerID=8YFLogxK

U2 - 10.1126/science.1092963

DO - 10.1126/science.1092963

M3 - Article

AN - SCOPUS:0842331448

VL - 303

SP - 818

EP - 821

JO - Science

JF - Science

SN - 0036-8075

IS - 5659

ER -