Cupric oxide inclusions in cuprous oxide crystals grown by the floating zone method

Laszlo Frazer, Kelvin B. Chang, Kenneth R Poeppelmeier, John B. Ketterson

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Phase-pure cuprous oxide (Cu2O) crystals are difficult to grow since cupric oxide can form within the crystal as the crystal is cooled to ambient conditions. Vacancies are the solute which causes precipitation of macroscopic defects. Therefore, even when a mostly phase-pure single crystal is used as a feed rod, cupric oxide inclusions persist in the recrystallized solid. Control of the thermal profile during crystal growth, however, can improve phase-purity; a slow counter-rotation rate of the feed and seed rods results in fewer inclusions. Cupric oxide can be removed by annealing, which produces a factor of 540 ±70 increase in phase-purity.

Original languageEnglish
Article number034901
JournalScience and Technology of Advanced Materials
Volume16
Issue number3
DOIs
Publication statusPublished - Jun 1 2015

Fingerprint

Crystals
Oxides
Crystallization
Vacancies
Seed
Crystal growth
Single crystals
Annealing
Defects
cuprous oxide
cupric oxide
Hot Temperature

Keywords

  • cuprous oxide
  • floating zone
  • inclusions
  • oxides

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Cupric oxide inclusions in cuprous oxide crystals grown by the floating zone method. / Frazer, Laszlo; Chang, Kelvin B.; Poeppelmeier, Kenneth R; Ketterson, John B.

In: Science and Technology of Advanced Materials, Vol. 16, No. 3, 034901, 01.06.2015.

Research output: Contribution to journalArticle

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