Abstract
Cu2I2Se6 is a new wide-bandgap semiconductor with high stability and great potential toward hard radiation and photon detection. Cu2I2Se6 crystallizes in the rhombohedral R3?m space group with a density of d = 5.287 g·cm-3 and a wide bandgap Eg of 1.95 eV. First-principles electronic band structure calculations at the density functional theory level indicate an indirect bandgap and a low electron effective mass me∗ of 0.32. The congruently melting compound was grown in centimeter-size Cu2I2Se6 single crystals using a vertical Bridgman method. A high electric resistivity of ?1012 ?·cm is readily achieved, and detectors made of Cu2I2Se6 single crystals demonstrate high photosensitivity to Ag Kα X-rays (22.4 keV) and show spectroscopic performance with energy resolutions under 241Am α-particles (5.5 MeV) radiation. The electron mobility is measured by a time-of-flight technique to be ?46 cm2·V-1·s-1. This value is comparable to that of one of the leading ?-ray detector materials, TlBr, and is a factor of 30 higher than mobility values obtained for amorphous Se for X-ray detection.
| Original language | English |
|---|---|
| Pages (from-to) | 1894-1899 |
| Number of pages | 6 |
| Journal | Journal of the American Chemical Society |
| Volume | 140 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - Feb 7 2018 |
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ASJC Scopus subject areas
- Catalysis
- Chemistry(all)
- Biochemistry
- Colloid and Surface Chemistry
Cite this
Cu2I2Se6 : A Metal-Inorganic Framework Wide-Bandgap Semiconductor for Photon Detection at Room Temperature. / Lin, Wenwen; Stoumpos, Constantinos C.; Kontsevoi, Oleg Y.; Liu, Zhifu; He, Yihui; Das, Sanjib; Xu, Yadong; McCall, Kyle M.; Wessels, Bruce W.; Kanatzidis, Mercouri G.
In: Journal of the American Chemical Society, Vol. 140, No. 5, 07.02.2018, p. 1894-1899.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Cu2I2Se6
T2 - A Metal-Inorganic Framework Wide-Bandgap Semiconductor for Photon Detection at Room Temperature
AU - Lin, Wenwen
AU - Stoumpos, Constantinos C.
AU - Kontsevoi, Oleg Y.
AU - Liu, Zhifu
AU - He, Yihui
AU - Das, Sanjib
AU - Xu, Yadong
AU - McCall, Kyle M.
AU - Wessels, Bruce W.
AU - Kanatzidis, Mercouri G
PY - 2018/2/7
Y1 - 2018/2/7
N2 - Cu2I2Se6 is a new wide-bandgap semiconductor with high stability and great potential toward hard radiation and photon detection. Cu2I2Se6 crystallizes in the rhombohedral R3?m space group with a density of d = 5.287 g·cm-3 and a wide bandgap Eg of 1.95 eV. First-principles electronic band structure calculations at the density functional theory level indicate an indirect bandgap and a low electron effective mass me∗ of 0.32. The congruently melting compound was grown in centimeter-size Cu2I2Se6 single crystals using a vertical Bridgman method. A high electric resistivity of ?1012 ?·cm is readily achieved, and detectors made of Cu2I2Se6 single crystals demonstrate high photosensitivity to Ag Kα X-rays (22.4 keV) and show spectroscopic performance with energy resolutions under 241Am α-particles (5.5 MeV) radiation. The electron mobility is measured by a time-of-flight technique to be ?46 cm2·V-1·s-1. This value is comparable to that of one of the leading ?-ray detector materials, TlBr, and is a factor of 30 higher than mobility values obtained for amorphous Se for X-ray detection.
AB - Cu2I2Se6 is a new wide-bandgap semiconductor with high stability and great potential toward hard radiation and photon detection. Cu2I2Se6 crystallizes in the rhombohedral R3?m space group with a density of d = 5.287 g·cm-3 and a wide bandgap Eg of 1.95 eV. First-principles electronic band structure calculations at the density functional theory level indicate an indirect bandgap and a low electron effective mass me∗ of 0.32. The congruently melting compound was grown in centimeter-size Cu2I2Se6 single crystals using a vertical Bridgman method. A high electric resistivity of ?1012 ?·cm is readily achieved, and detectors made of Cu2I2Se6 single crystals demonstrate high photosensitivity to Ag Kα X-rays (22.4 keV) and show spectroscopic performance with energy resolutions under 241Am α-particles (5.5 MeV) radiation. The electron mobility is measured by a time-of-flight technique to be ?46 cm2·V-1·s-1. This value is comparable to that of one of the leading ?-ray detector materials, TlBr, and is a factor of 30 higher than mobility values obtained for amorphous Se for X-ray detection.
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U2 - 10.1021/jacs.7b12549
DO - 10.1021/jacs.7b12549
M3 - Article
VL - 140
SP - 1894
EP - 1899
JO - Journal of the American Chemical Society
JF - Journal of the American Chemical Society
SN - 0002-7863
IS - 5
ER -