CuxUTe3

Stabilization of UTe3 in the ZrSe3 structure type via copper insertion. The artifact of Te-Te chains and evidence for distortions due to long range modulations

R. Patschke, J. D. Breshears, P. Brazis, C. R. Kannewurf, S. J L Billinge, Mercouri G Kanatzidis

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

The ternary phase, CuxUTe3 (x = 0.25 and 0.33), was synthesized from a 3/1/4 mixture of Cu/U/Te that was heated to 800 °C for 6 days and cooled at a rate of -4 °C h-1. It adopts the monoclinic space group P21/m with a = 6.0838(12) Å, b = 4.2140(8) Å, c = 10.361(2) Å, β = 98.83(3)°, and V = 262.47(9) Å3 (for x ∼ 0.25). The structure is built from UTe3 layers of ZrSe3-type that are connected in the [001] direction by Cu atoms. The Cu atoms stabilize α-UTe3 by inserting between the layers. CuxUTe3 can be prepared rationally via a soft chemistry route by reaction of Cu with α-UTe3. The structural analysis suggests the presence of straight chains of Te atoms (∼3.0 Å apart) along the a-axis but this is an artifact as shown by electron diffraction studies of CuxUTe3 that indicate the existence of a supercell along the a-axis. Pair distribution function analysis (PDF) was used to show that the Te-Te chains contain Te-Te dimers at 2.74 Å. Charge transport measurements suggest a narrow gap semiconductor but they also indicate anomalous behavior as a function of temperature with a n-type to p-type transition at ∼40 K.

Original languageEnglish
Pages (from-to)4755-4762
Number of pages8
JournalJournal of the American Chemical Society
Volume123
Issue number20
DOIs
Publication statusPublished - 2001

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Semiconductors
Artifacts
Copper
Stabilization
Modulation
Electrons
Atoms
Temperature
Structural analysis
Electron diffraction
Dimers
Distribution functions
Charge transfer
Semiconductor materials
Direction compound

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

CuxUTe3 : Stabilization of UTe3 in the ZrSe3 structure type via copper insertion. The artifact of Te-Te chains and evidence for distortions due to long range modulations. / Patschke, R.; Breshears, J. D.; Brazis, P.; Kannewurf, C. R.; Billinge, S. J L; Kanatzidis, Mercouri G.

In: Journal of the American Chemical Society, Vol. 123, No. 20, 2001, p. 4755-4762.

Research output: Contribution to journalArticle

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abstract = "The ternary phase, CuxUTe3 (x = 0.25 and 0.33), was synthesized from a 3/1/4 mixture of Cu/U/Te that was heated to 800 °C for 6 days and cooled at a rate of -4 °C h-1. It adopts the monoclinic space group P21/m with a = 6.0838(12) {\AA}, b = 4.2140(8) {\AA}, c = 10.361(2) {\AA}, β = 98.83(3)°, and V = 262.47(9) {\AA}3 (for x ∼ 0.25). The structure is built from UTe3 layers of ZrSe3-type that are connected in the [001] direction by Cu atoms. The Cu atoms stabilize α-UTe3 by inserting between the layers. CuxUTe3 can be prepared rationally via a soft chemistry route by reaction of Cu with α-UTe3. The structural analysis suggests the presence of straight chains of Te atoms (∼3.0 {\AA} apart) along the a-axis but this is an artifact as shown by electron diffraction studies of CuxUTe3 that indicate the existence of a supercell along the a-axis. Pair distribution function analysis (PDF) was used to show that the Te-Te chains contain Te-Te dimers at 2.74 {\AA}. Charge transport measurements suggest a narrow gap semiconductor but they also indicate anomalous behavior as a function of temperature with a n-type to p-type transition at ∼40 K.",
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AU - Breshears, J. D.

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AU - Kanatzidis, Mercouri G

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N2 - The ternary phase, CuxUTe3 (x = 0.25 and 0.33), was synthesized from a 3/1/4 mixture of Cu/U/Te that was heated to 800 °C for 6 days and cooled at a rate of -4 °C h-1. It adopts the monoclinic space group P21/m with a = 6.0838(12) Å, b = 4.2140(8) Å, c = 10.361(2) Å, β = 98.83(3)°, and V = 262.47(9) Å3 (for x ∼ 0.25). The structure is built from UTe3 layers of ZrSe3-type that are connected in the [001] direction by Cu atoms. The Cu atoms stabilize α-UTe3 by inserting between the layers. CuxUTe3 can be prepared rationally via a soft chemistry route by reaction of Cu with α-UTe3. The structural analysis suggests the presence of straight chains of Te atoms (∼3.0 Å apart) along the a-axis but this is an artifact as shown by electron diffraction studies of CuxUTe3 that indicate the existence of a supercell along the a-axis. Pair distribution function analysis (PDF) was used to show that the Te-Te chains contain Te-Te dimers at 2.74 Å. Charge transport measurements suggest a narrow gap semiconductor but they also indicate anomalous behavior as a function of temperature with a n-type to p-type transition at ∼40 K.

AB - The ternary phase, CuxUTe3 (x = 0.25 and 0.33), was synthesized from a 3/1/4 mixture of Cu/U/Te that was heated to 800 °C for 6 days and cooled at a rate of -4 °C h-1. It adopts the monoclinic space group P21/m with a = 6.0838(12) Å, b = 4.2140(8) Å, c = 10.361(2) Å, β = 98.83(3)°, and V = 262.47(9) Å3 (for x ∼ 0.25). The structure is built from UTe3 layers of ZrSe3-type that are connected in the [001] direction by Cu atoms. The Cu atoms stabilize α-UTe3 by inserting between the layers. CuxUTe3 can be prepared rationally via a soft chemistry route by reaction of Cu with α-UTe3. The structural analysis suggests the presence of straight chains of Te atoms (∼3.0 Å apart) along the a-axis but this is an artifact as shown by electron diffraction studies of CuxUTe3 that indicate the existence of a supercell along the a-axis. Pair distribution function analysis (PDF) was used to show that the Te-Te chains contain Te-Te dimers at 2.74 Å. Charge transport measurements suggest a narrow gap semiconductor but they also indicate anomalous behavior as a function of temperature with a n-type to p-type transition at ∼40 K.

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