Cyclic voltammetry of semiconductor photoelectrodes III

A comparison of experiment and theory for n-Si and p-Si electrodes

Patrick G. Santangelo, D. Marya Lieberman, Nathan S Lewis

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Cyclic voltammograms have been obtained under a variety of conditions using a semiconducting photoelectrode or a circuit containing a diode in series with a metallic electrode. Simulations of the voltammetry of both types of systems were performed using a model circuit in which electrode nonideality, double-layer capacitance, and parallel resistance effects were accounted for quantitatively. The simulated voltammograms were in excellent agreement with the experimental data for a diode/electrode circuit, yielding a reliable description of the shapes of the voltammograms as well as of the voltage dropped across the diode element as a function of the total potential dropped across the circuit. The digital simulations were in good agreement with the voltammetry of p-Si/CH3OH-CoCp2 +/0 contacts at high light intensities, but could not quantitatively describe the shapes of the voltammograms at low light intensities.

Original languageEnglish
Pages (from-to)4731-4738
Number of pages8
JournalJournal of Physical Chemistry B
Volume102
Issue number24
Publication statusPublished - Jun 11 1998

Fingerprint

Cyclic voltammetry
Semiconductor materials
Diodes
Electrodes
electrodes
Networks (circuits)
diodes
Voltammetry
luminous intensity
Experiments
High intensity light
digital simulation
Capacitance
capacitance
Electric potential
electric potential
simulation

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry

Cite this

Cyclic voltammetry of semiconductor photoelectrodes III : A comparison of experiment and theory for n-Si and p-Si electrodes. / Santangelo, Patrick G.; Lieberman, D. Marya; Lewis, Nathan S.

In: Journal of Physical Chemistry B, Vol. 102, No. 24, 11.06.1998, p. 4731-4738.

Research output: Contribution to journalArticle

@article{1dd1d62f42d241a9b97dd35ad9ebc47b,
title = "Cyclic voltammetry of semiconductor photoelectrodes III: A comparison of experiment and theory for n-Si and p-Si electrodes",
abstract = "Cyclic voltammograms have been obtained under a variety of conditions using a semiconducting photoelectrode or a circuit containing a diode in series with a metallic electrode. Simulations of the voltammetry of both types of systems were performed using a model circuit in which electrode nonideality, double-layer capacitance, and parallel resistance effects were accounted for quantitatively. The simulated voltammograms were in excellent agreement with the experimental data for a diode/electrode circuit, yielding a reliable description of the shapes of the voltammograms as well as of the voltage dropped across the diode element as a function of the total potential dropped across the circuit. The digital simulations were in good agreement with the voltammetry of p-Si/CH3OH-CoCp2 +/0 contacts at high light intensities, but could not quantitatively describe the shapes of the voltammograms at low light intensities.",
author = "Santangelo, {Patrick G.} and Lieberman, {D. Marya} and Lewis, {Nathan S}",
year = "1998",
month = "6",
day = "11",
language = "English",
volume = "102",
pages = "4731--4738",
journal = "Journal of Physical Chemistry B Materials",
issn = "1520-6106",
publisher = "American Chemical Society",
number = "24",

}

TY - JOUR

T1 - Cyclic voltammetry of semiconductor photoelectrodes III

T2 - A comparison of experiment and theory for n-Si and p-Si electrodes

AU - Santangelo, Patrick G.

AU - Lieberman, D. Marya

AU - Lewis, Nathan S

PY - 1998/6/11

Y1 - 1998/6/11

N2 - Cyclic voltammograms have been obtained under a variety of conditions using a semiconducting photoelectrode or a circuit containing a diode in series with a metallic electrode. Simulations of the voltammetry of both types of systems were performed using a model circuit in which electrode nonideality, double-layer capacitance, and parallel resistance effects were accounted for quantitatively. The simulated voltammograms were in excellent agreement with the experimental data for a diode/electrode circuit, yielding a reliable description of the shapes of the voltammograms as well as of the voltage dropped across the diode element as a function of the total potential dropped across the circuit. The digital simulations were in good agreement with the voltammetry of p-Si/CH3OH-CoCp2 +/0 contacts at high light intensities, but could not quantitatively describe the shapes of the voltammograms at low light intensities.

AB - Cyclic voltammograms have been obtained under a variety of conditions using a semiconducting photoelectrode or a circuit containing a diode in series with a metallic electrode. Simulations of the voltammetry of both types of systems were performed using a model circuit in which electrode nonideality, double-layer capacitance, and parallel resistance effects were accounted for quantitatively. The simulated voltammograms were in excellent agreement with the experimental data for a diode/electrode circuit, yielding a reliable description of the shapes of the voltammograms as well as of the voltage dropped across the diode element as a function of the total potential dropped across the circuit. The digital simulations were in good agreement with the voltammetry of p-Si/CH3OH-CoCp2 +/0 contacts at high light intensities, but could not quantitatively describe the shapes of the voltammograms at low light intensities.

UR - http://www.scopus.com/inward/record.url?scp=11744273406&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=11744273406&partnerID=8YFLogxK

M3 - Article

VL - 102

SP - 4731

EP - 4738

JO - Journal of Physical Chemistry B Materials

JF - Journal of Physical Chemistry B Materials

SN - 1520-6106

IS - 24

ER -