Cyclic voltammetry of semiconductor photoelectrodes III: A comparison of experiment and theory for n-Si and p-Si electrodes

Patrick G. Santangelo, D. Marya Lieberman, Nathan S Lewis

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Abstract

Cyclic voltammograms have been obtained under a variety of conditions using a semiconducting photoelectrode or a circuit containing a diode in series with a metallic electrode. Simulations of the voltammetry of both types of systems were performed using a model circuit in which electrode nonideality, double-layer capacitance, and parallel resistance effects were accounted for quantitatively. The simulated voltammograms were in excellent agreement with the experimental data for a diode/electrode circuit, yielding a reliable description of the shapes of the voltammograms as well as of the voltage dropped across the diode element as a function of the total potential dropped across the circuit. The digital simulations were in good agreement with the voltammetry of p-Si/CH3OH-CoCp2 +/0 contacts at high light intensities, but could not quantitatively describe the shapes of the voltammograms at low light intensities.

Original languageEnglish
Pages (from-to)4731-4738
Number of pages8
JournalJournal of Physical Chemistry B
Volume102
Issue number24
Publication statusPublished - Jun 11 1998

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ASJC Scopus subject areas

  • Physical and Theoretical Chemistry

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