Abstract
Cyclic voltammograms have been obtained under a variety of conditions using a semiconducting photoelectrode or a circuit containing a diode in series with a metallic electrode. Simulations of the voltammetry of both types of systems were performed using a model circuit in which electrode nonideality, double-layer capacitance, and parallel resistance effects were accounted for quantitatively. The simulated voltammograms were in excellent agreement with the experimental data for a diode/electrode circuit, yielding a reliable description of the shapes of the voltammograms as well as of the voltage dropped across the diode element as a function of the total potential dropped across the circuit. The digital simulations were in good agreement with the voltammetry of p-Si/CH3OH-CoCp2 +/0 contacts at high light intensities, but could not quantitatively describe the shapes of the voltammograms at low light intensities.
| Original language | English |
|---|---|
| Pages (from-to) | 4731-4738 |
| Number of pages | 8 |
| Journal | Journal of Physical Chemistry B |
| Volume | 102 |
| Issue number | 24 |
| Publication status | Published - Jun 11 1998 |
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ASJC Scopus subject areas
- Physical and Theoretical Chemistry
Cite this
Cyclic voltammetry of semiconductor photoelectrodes III : A comparison of experiment and theory for n-Si and p-Si electrodes. / Santangelo, Patrick G.; Lieberman, D. Marya; Lewis, Nathan S.
In: Journal of Physical Chemistry B, Vol. 102, No. 24, 11.06.1998, p. 4731-4738.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Cyclic voltammetry of semiconductor photoelectrodes III
T2 - A comparison of experiment and theory for n-Si and p-Si electrodes
AU - Santangelo, Patrick G.
AU - Lieberman, D. Marya
AU - Lewis, Nathan S
PY - 1998/6/11
Y1 - 1998/6/11
N2 - Cyclic voltammograms have been obtained under a variety of conditions using a semiconducting photoelectrode or a circuit containing a diode in series with a metallic electrode. Simulations of the voltammetry of both types of systems were performed using a model circuit in which electrode nonideality, double-layer capacitance, and parallel resistance effects were accounted for quantitatively. The simulated voltammograms were in excellent agreement with the experimental data for a diode/electrode circuit, yielding a reliable description of the shapes of the voltammograms as well as of the voltage dropped across the diode element as a function of the total potential dropped across the circuit. The digital simulations were in good agreement with the voltammetry of p-Si/CH3OH-CoCp2 +/0 contacts at high light intensities, but could not quantitatively describe the shapes of the voltammograms at low light intensities.
AB - Cyclic voltammograms have been obtained under a variety of conditions using a semiconducting photoelectrode or a circuit containing a diode in series with a metallic electrode. Simulations of the voltammetry of both types of systems were performed using a model circuit in which electrode nonideality, double-layer capacitance, and parallel resistance effects were accounted for quantitatively. The simulated voltammograms were in excellent agreement with the experimental data for a diode/electrode circuit, yielding a reliable description of the shapes of the voltammograms as well as of the voltage dropped across the diode element as a function of the total potential dropped across the circuit. The digital simulations were in good agreement with the voltammetry of p-Si/CH3OH-CoCp2 +/0 contacts at high light intensities, but could not quantitatively describe the shapes of the voltammograms at low light intensities.
UR - http://www.scopus.com/inward/record.url?scp=11744273406&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=11744273406&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:11744273406
VL - 102
SP - 4731
EP - 4738
JO - Journal of Physical Chemistry B Materials
JF - Journal of Physical Chemistry B Materials
SN - 1520-6106
IS - 24
ER -