Abstract
CuAlOx thin films were prepared at three substrate temperatures (TS =60, 300, and 600 °C) and two oxygen partial pressures (P O2 =0.5 and 2 mTorr) via dc reactive magnetron sputtering from Cu-Al 50-50 at. % alloy targets and subsequent annealing. As-deposited films with P O2 =0.5 mTorr were oxygen deficient; although the delafossite structure formed upon annealing, electrical properties were poor. Films deposited with P O2 =2 mTorr transformed into the delafossite structure and exhibited p -type conductivity after annealing under N2 at temperatures TA 750 °C. Conductivity generally increased with increasing TS and decreasing TA. A special case of P O2 =2 mTorr and low TS (60 °C) resulted in a partially crystalline oxide phase that transformed into the delafossite structure at TA =700 °C and yielded the highest conductivity of 1.8 S cm-1. In general, a TA near the phase formation boundary led to an increase in conductivity. Low-temperature hydrothermal annealing was also investigated and shown to produce mixed phase films exhibiting the delafossite structure along with CuO, AlOOH, and Al2 O3.
| Original language | English |
|---|---|
| Article number | 011018 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 29 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Jan 2011 |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
Cite this
DC reactive magnetron sputtering, annealing, and characterization of CuAlO2 thin films. / Stevens, Blake L.; Hoel, Cathleen A.; Swanborg, Carolyn; Tang, Yang; Zhou, Chuanle; Grayson, Matthew; Poeppelmeier, Kenneth R; Barnett, Scott A.
In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 29, No. 1, 011018, 01.2011.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - DC reactive magnetron sputtering, annealing, and characterization of CuAlO2 thin films
AU - Stevens, Blake L.
AU - Hoel, Cathleen A.
AU - Swanborg, Carolyn
AU - Tang, Yang
AU - Zhou, Chuanle
AU - Grayson, Matthew
AU - Poeppelmeier, Kenneth R
AU - Barnett, Scott A.
PY - 2011/1
Y1 - 2011/1
N2 - CuAlOx thin films were prepared at three substrate temperatures (TS =60, 300, and 600 °C) and two oxygen partial pressures (P O2 =0.5 and 2 mTorr) via dc reactive magnetron sputtering from Cu-Al 50-50 at. % alloy targets and subsequent annealing. As-deposited films with P O2 =0.5 mTorr were oxygen deficient; although the delafossite structure formed upon annealing, electrical properties were poor. Films deposited with P O2 =2 mTorr transformed into the delafossite structure and exhibited p -type conductivity after annealing under N2 at temperatures TA 750 °C. Conductivity generally increased with increasing TS and decreasing TA. A special case of P O2 =2 mTorr and low TS (60 °C) resulted in a partially crystalline oxide phase that transformed into the delafossite structure at TA =700 °C and yielded the highest conductivity of 1.8 S cm-1. In general, a TA near the phase formation boundary led to an increase in conductivity. Low-temperature hydrothermal annealing was also investigated and shown to produce mixed phase films exhibiting the delafossite structure along with CuO, AlOOH, and Al2 O3.
AB - CuAlOx thin films were prepared at three substrate temperatures (TS =60, 300, and 600 °C) and two oxygen partial pressures (P O2 =0.5 and 2 mTorr) via dc reactive magnetron sputtering from Cu-Al 50-50 at. % alloy targets and subsequent annealing. As-deposited films with P O2 =0.5 mTorr were oxygen deficient; although the delafossite structure formed upon annealing, electrical properties were poor. Films deposited with P O2 =2 mTorr transformed into the delafossite structure and exhibited p -type conductivity after annealing under N2 at temperatures TA 750 °C. Conductivity generally increased with increasing TS and decreasing TA. A special case of P O2 =2 mTorr and low TS (60 °C) resulted in a partially crystalline oxide phase that transformed into the delafossite structure at TA =700 °C and yielded the highest conductivity of 1.8 S cm-1. In general, a TA near the phase formation boundary led to an increase in conductivity. Low-temperature hydrothermal annealing was also investigated and shown to produce mixed phase films exhibiting the delafossite structure along with CuO, AlOOH, and Al2 O3.
UR - http://www.scopus.com/inward/record.url?scp=79952010867&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79952010867&partnerID=8YFLogxK
U2 - 10.1116/1.3525640
DO - 10.1116/1.3525640
M3 - Article
AN - SCOPUS:79952010867
VL - 29
JO - Journal of Vacuum Science and Technology A
JF - Journal of Vacuum Science and Technology A
SN - 0734-2101
IS - 1
M1 - 011018
ER -