DECHANNELING OF 5 MeV PROTONS FROM PLANAR CHANNELS IN SILICON AND ITS TEMPERATURE DEPENDENCE.

M. R. Altman, Leonard C Feldman, W. M. Gibson

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Authors investigated the dechanneling properties of 5 MeV protons in left brace 110 right brace planes in silicon. From measurements of the spectra of particles transmitted through a 60 mu thick crystal the half-thickness (x one-half ) for dechanneling is deduced for crystal temperatures between room temperature and 600 C. An absence of a significant temperature dependence of multiple scattering in the plane is observed and suggests that the multiple scattering is predominantly electronic. Calculations of the dechannelling length, x// one-half as a function of temperature, using the Monte-Carlo critical angle results of Barrett, are found to agree very well with the experimental results.

Original languageEnglish
Pages (from-to)171-180
Number of pages10
JournalRadiation Effects
Volume18
Issue number3-4
Publication statusPublished - 1973

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Silicon
Protons
temperature dependence
protons
Multiple scattering
silicon
scattering
crystals
Temperature
Crystals
temperature
room temperature
electronics

ASJC Scopus subject areas

  • Engineering(all)

Cite this

DECHANNELING OF 5 MeV PROTONS FROM PLANAR CHANNELS IN SILICON AND ITS TEMPERATURE DEPENDENCE. / Altman, M. R.; Feldman, Leonard C; Gibson, W. M.

In: Radiation Effects, Vol. 18, No. 3-4, 1973, p. 171-180.

Research output: Contribution to journalArticle

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