Abstract
Authors investigated the dechanneling properties of 5 MeV protons in left brace 110 right brace planes in silicon. From measurements of the spectra of particles transmitted through a 60 mu thick crystal the half-thickness (x one-half ) for dechanneling is deduced for crystal temperatures between room temperature and 600 C. An absence of a significant temperature dependence of multiple scattering in the plane is observed and suggests that the multiple scattering is predominantly electronic. Calculations of the dechannelling length, x// one-half as a function of temperature, using the Monte-Carlo critical angle results of Barrett, are found to agree very well with the experimental results.
| Original language | English |
|---|---|
| Pages (from-to) | 171-180 |
| Number of pages | 10 |
| Journal | Radiation Effects |
| Volume | 18 |
| Issue number | 3-4 |
| Publication status | Published - 1973 |
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DECHANNELING OF 5 MeV PROTONS FROM PLANAR CHANNELS IN SILICON AND ITS TEMPERATURE DEPENDENCE. / Altman, M. R.; Feldman, Leonard C; Gibson, W. M.
In: Radiation Effects, Vol. 18, No. 3-4, 1973, p. 171-180.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - DECHANNELING OF 5 MeV PROTONS FROM PLANAR CHANNELS IN SILICON AND ITS TEMPERATURE DEPENDENCE.
AU - Altman, M. R.
AU - Feldman, Leonard C
AU - Gibson, W. M.
PY - 1973
Y1 - 1973
N2 - Authors investigated the dechanneling properties of 5 MeV protons in left brace 110 right brace planes in silicon. From measurements of the spectra of particles transmitted through a 60 mu thick crystal the half-thickness (x one-half ) for dechanneling is deduced for crystal temperatures between room temperature and 600 C. An absence of a significant temperature dependence of multiple scattering in the plane is observed and suggests that the multiple scattering is predominantly electronic. Calculations of the dechannelling length, x// one-half as a function of temperature, using the Monte-Carlo critical angle results of Barrett, are found to agree very well with the experimental results.
AB - Authors investigated the dechanneling properties of 5 MeV protons in left brace 110 right brace planes in silicon. From measurements of the spectra of particles transmitted through a 60 mu thick crystal the half-thickness (x one-half ) for dechanneling is deduced for crystal temperatures between room temperature and 600 C. An absence of a significant temperature dependence of multiple scattering in the plane is observed and suggests that the multiple scattering is predominantly electronic. Calculations of the dechannelling length, x// one-half as a function of temperature, using the Monte-Carlo critical angle results of Barrett, are found to agree very well with the experimental results.
UR - http://www.scopus.com/inward/record.url?scp=0015564517&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0015564517&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0015564517
VL - 18
SP - 171
EP - 180
JO - Radiation Effects and Defects in Solids
JF - Radiation Effects and Defects in Solids
SN - 1042-0150
IS - 3-4
ER -