Defect analysis of ionically compensated quadruple and quintuple perovskite layered cuprates with Ti blocking layers

N. Mansourian-Hadavi, Thomas O Mason, D. Ko, Kenneth R Poeppelmeier

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

This work presents a modified defect model for pure and chemically substituted quadruple and quintuple pure perovskite layered cuprates, using data from the Jonker (thermopower vs In conductivity) and Brouwer (log conductivity vs logpO2) analyses. The closely matched in-plane bond lengths of the blocking and the active layers in these structures promote ionic compensation rather than electronic compensation upon aliovalent p-type doping. A comprehensive defect model that takes into account all the major defect species in an ionically compensated quadruple or quintuple perovskite provides a better means for understanding the electrical behavior of these novel materials. The presented model allows for the calculation of effective dopant and the oxygen interstitial concentrations in these materials.

Original languageEnglish
Pages (from-to)188-200
Number of pages13
JournalJournal of Solid State Chemistry
Volume164
Issue number2
DOIs
Publication statusPublished - 2002

Fingerprint

Perovskite
cuprates
Defects
defects
Doping (additives)
conductivity
Thermoelectric power
Bond length
interstitials
Oxygen
oxygen
electronics
perovskite
Compensation and Redress

ASJC Scopus subject areas

  • Inorganic Chemistry
  • Physical and Theoretical Chemistry
  • Materials Chemistry

Cite this

@article{fc4b3646a4bb4d15adf0ec01629dbf13,
title = "Defect analysis of ionically compensated quadruple and quintuple perovskite layered cuprates with Ti blocking layers",
abstract = "This work presents a modified defect model for pure and chemically substituted quadruple and quintuple pure perovskite layered cuprates, using data from the Jonker (thermopower vs In conductivity) and Brouwer (log conductivity vs logpO2) analyses. The closely matched in-plane bond lengths of the blocking and the active layers in these structures promote ionic compensation rather than electronic compensation upon aliovalent p-type doping. A comprehensive defect model that takes into account all the major defect species in an ionically compensated quadruple or quintuple perovskite provides a better means for understanding the electrical behavior of these novel materials. The presented model allows for the calculation of effective dopant and the oxygen interstitial concentrations in these materials.",
author = "N. Mansourian-Hadavi and Mason, {Thomas O} and D. Ko and Poeppelmeier, {Kenneth R}",
year = "2002",
doi = "10.1006/jssc.2001.9457",
language = "English",
volume = "164",
pages = "188--200",
journal = "Journal of Solid State Chemistry",
issn = "0022-4596",
publisher = "Academic Press Inc.",
number = "2",

}

TY - JOUR

T1 - Defect analysis of ionically compensated quadruple and quintuple perovskite layered cuprates with Ti blocking layers

AU - Mansourian-Hadavi, N.

AU - Mason, Thomas O

AU - Ko, D.

AU - Poeppelmeier, Kenneth R

PY - 2002

Y1 - 2002

N2 - This work presents a modified defect model for pure and chemically substituted quadruple and quintuple pure perovskite layered cuprates, using data from the Jonker (thermopower vs In conductivity) and Brouwer (log conductivity vs logpO2) analyses. The closely matched in-plane bond lengths of the blocking and the active layers in these structures promote ionic compensation rather than electronic compensation upon aliovalent p-type doping. A comprehensive defect model that takes into account all the major defect species in an ionically compensated quadruple or quintuple perovskite provides a better means for understanding the electrical behavior of these novel materials. The presented model allows for the calculation of effective dopant and the oxygen interstitial concentrations in these materials.

AB - This work presents a modified defect model for pure and chemically substituted quadruple and quintuple pure perovskite layered cuprates, using data from the Jonker (thermopower vs In conductivity) and Brouwer (log conductivity vs logpO2) analyses. The closely matched in-plane bond lengths of the blocking and the active layers in these structures promote ionic compensation rather than electronic compensation upon aliovalent p-type doping. A comprehensive defect model that takes into account all the major defect species in an ionically compensated quadruple or quintuple perovskite provides a better means for understanding the electrical behavior of these novel materials. The presented model allows for the calculation of effective dopant and the oxygen interstitial concentrations in these materials.

UR - http://www.scopus.com/inward/record.url?scp=0036325558&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036325558&partnerID=8YFLogxK

U2 - 10.1006/jssc.2001.9457

DO - 10.1006/jssc.2001.9457

M3 - Article

VL - 164

SP - 188

EP - 200

JO - Journal of Solid State Chemistry

JF - Journal of Solid State Chemistry

SN - 0022-4596

IS - 2

ER -