Defect mechanisms in the In2O3(ZnO)k system (k=3, 5, 7, 9)

E. Mitchell Hopper, Haowei Peng, Steven A. Hawks, Arthur J Freeman, Thomas O Mason

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The defect chemistry of several compounds in the In2O 3(ZnO)k series (k=3, 5, 7, and 9) was investigated in bulk specimens by analysis of the dependence of their conductivity on the oxygen partial pressure. The resulting Brouwer slopes were inconsistent with a doubly charged oxygen vacancy defect model, and varied with the phase. The k=3 phase had behavior similar to donor-doped In2O3, and the behavior of the other phases resembled that of donor-doped ZnO. The donor in both cases is proposed to be In occupying Zn sites. First principles calculations of the formation energy of intrinsic defects in this system support the proposed models. The present work expands prior theoretical analysis to include acceptor defects, such as cation vacancies (VZn, V In) and oxygen interstitials (Oi).

Original languageEnglish
Article number093712
JournalJournal of Applied Physics
Volume112
Issue number9
DOIs
Publication statusPublished - Nov 1 2012

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defects
oxygen
support systems
energy of formation
partial pressure
interstitials
chemistry
slopes
cations
conductivity

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Defect mechanisms in the In2O3(ZnO)k system (k=3, 5, 7, 9). / Mitchell Hopper, E.; Peng, Haowei; Hawks, Steven A.; Freeman, Arthur J; Mason, Thomas O.

In: Journal of Applied Physics, Vol. 112, No. 9, 093712, 01.11.2012.

Research output: Contribution to journalArticle

Mitchell Hopper, E. ; Peng, Haowei ; Hawks, Steven A. ; Freeman, Arthur J ; Mason, Thomas O. / Defect mechanisms in the In2O3(ZnO)k system (k=3, 5, 7, 9). In: Journal of Applied Physics. 2012 ; Vol. 112, No. 9.
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