TY - JOUR
T1 - Defect-Seeded Atomic Layer Deposition of Metal Oxides on the Basal Plane of 2D Layered Materials
AU - Mazza, Michael F.
AU - Cabán-Acevedo, Miguel
AU - Wiensch, Joshua D.
AU - Thompson, Annelise C.
AU - Lewis, Nathan S.
N1 - Funding Information:
M.C. acknowledges support from the Ford Foundation under the Postdoctoral Scholar Fellowship program. M.C. acknowledges support from the National Science Foundation CCI Solar Fuels Program under Grant No. CHE-1305124. M.F.M, J.D.W., and N.S.L. acknowledge support from the U.S. Department of Energy under award DE-FG02-03ER15483. A.C.T. acknowledges support from the Graduate Research Fellowship Program of the National Science Foundation. Research was in part carried out at the Molecular Materials Research Center in the Beckman Institute at the California Institute of Technology.
Publisher Copyright:
Copyright © 2020 American Chemical Society.
PY - 2020/4/8
Y1 - 2020/4/8
N2 - Atomic layer deposition (ALD) on mechanically exfoliated 2D layered materials spontaneously produces network patterns of metal oxide nanoparticles in triangular and linear deposits on the basal surface. The network patterns formed under a range of ALD conditions and were independent of the orientation of the substrate in the ALD reactor. The patterns were produced on MoS2 or HOPG when either tetrakis(dimethylamido)titanium or bis(ethylcyclopentadienyl)manganese were used as precursors, suggesting that the phenomenon is general for 2D materials. Transmission electron microscopy revealed the presence, prior to deposition, of dislocation networks along the basal plane of mechanically exfoliated 2D flakes, indicating that periodical basal plane defects related to disruptions in the van der Waals stacking of layers, such as perfect line dislocations and triangular extended stacking faults networks, introduce a surface reactivity landscape that leads to the emergence of patterned deposition.
AB - Atomic layer deposition (ALD) on mechanically exfoliated 2D layered materials spontaneously produces network patterns of metal oxide nanoparticles in triangular and linear deposits on the basal surface. The network patterns formed under a range of ALD conditions and were independent of the orientation of the substrate in the ALD reactor. The patterns were produced on MoS2 or HOPG when either tetrakis(dimethylamido)titanium or bis(ethylcyclopentadienyl)manganese were used as precursors, suggesting that the phenomenon is general for 2D materials. Transmission electron microscopy revealed the presence, prior to deposition, of dislocation networks along the basal plane of mechanically exfoliated 2D flakes, indicating that periodical basal plane defects related to disruptions in the van der Waals stacking of layers, such as perfect line dislocations and triangular extended stacking faults networks, introduce a surface reactivity landscape that leads to the emergence of patterned deposition.
KW - 2D layered materials
KW - Defect driven growth
KW - atomic layer deposition
KW - dislocation networks
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U2 - 10.1021/acs.nanolett.0c00179
DO - 10.1021/acs.nanolett.0c00179
M3 - Article
C2 - 32208708
AN - SCOPUS:85083003547
VL - 20
SP - 2632
EP - 2638
JO - Nano Letters
JF - Nano Letters
SN - 1530-6984
IS - 4
ER -