Abstract
Structural defect structure of indium tin oxide (ITO) was analyzed using high-resolution synchrotron x-ray diffraction, time of flight neutron powder diffraction and extended x-ray absorption fine structure. Correlation between structural results and electrical properties was made using measured electrical conductivity and thermopower. It was observed that the position of O i species in ITO samples were displaced along the direction towards the plane formed by d cations and away from the b cations. The structural results show atomic positions, cation distributions, and oxygen interstitial populations for oxidized and reduced materials.
Original language | English |
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Pages (from-to) | 3912-3920 |
Number of pages | 9 |
Journal | Journal of Applied Physics |
Volume | 96 |
Issue number | 7 |
DOIs | |
Publication status | Published - Oct 1 2004 |
ASJC Scopus subject areas
- Physics and Astronomy(all)