Defect structure studies of bulk and nano-indium-tin oxide

G. B. González; T. O. Mason; J. P. Quintana; O. Warschkow; D. E. Ellis; J. H. Hwang; J. P. Hodges; J. D. Jorgensen

doi:10.1063/1.1783610

Defect structure studies of bulk and nano-indium-tin oxide

G. B. González, T. O. Mason, J. P. Quintana, O. Warschkow, D. E. Ellis, J. H. Hwang, J. P. Hodges, J. D. Jorgensen

Northwestern University

Research output: Contribution to journal › Article › peer-review

153 Citations (Scopus)

Abstract

Structural defect structure of indium tin oxide (ITO) was analyzed using high-resolution synchrotron x-ray diffraction, time of flight neutron powder diffraction and extended x-ray absorption fine structure. Correlation between structural results and electrical properties was made using measured electrical conductivity and thermopower. It was observed that the position of O _i species in ITO samples were displaced along the direction towards the plane formed by d cations and away from the b cations. The structural results show atomic positions, cation distributions, and oxygen interstitial populations for oxidized and reduced materials.

Original language	English
Pages (from-to)	3912-3920
Number of pages	9
Journal	Journal of Applied Physics
Volume	96
Issue number	7
DOIs	https://doi.org/10.1063/1.1783610
Publication status	Published - Oct 1 2004

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Defect structure studies of bulk and nano-indium-tin oxide",

abstract = "Structural defect structure of indium tin oxide (ITO) was analyzed using high-resolution synchrotron x-ray diffraction, time of flight neutron powder diffraction and extended x-ray absorption fine structure. Correlation between structural results and electrical properties was made using measured electrical conductivity and thermopower. It was observed that the position of O i species in ITO samples were displaced along the direction towards the plane formed by d cations and away from the b cations. The structural results show atomic positions, cation distributions, and oxygen interstitial populations for oxidized and reduced materials.",

author = "Gonz{\'a}lez, {G. B.} and Mason, {T. O.} and Quintana, {J. P.} and O. Warschkow and Ellis, {D. E.} and Hwang, {J. H.} and Hodges, {J. P.} and Jorgensen, {J. D.}",

note = "Funding Information: The authors are grateful to Simine Short for collecting the neutron diffraction data. This research was initiated under US DOE Grant No. DE-FG02-84ER45097 and completed under NSF-MRSEC Grant No. DMR-0076097. The work at ANL was funded by the US DOE, Office of Science, Contract No. W-31-109-Eng-38. ORNL is managed by UT-Battelle, LLC, under contract DE-AC05-00OR22725 for the US Department of Energy. ",

year = "2004",

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doi = "10.1063/1.1783610",

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T1 - Defect structure studies of bulk and nano-indium-tin oxide

AU - González, G. B.

AU - Mason, T. O.

AU - Quintana, J. P.

AU - Warschkow, O.

AU - Ellis, D. E.

AU - Hwang, J. H.

AU - Hodges, J. P.

AU - Jorgensen, J. D.

N1 - Funding Information: The authors are grateful to Simine Short for collecting the neutron diffraction data. This research was initiated under US DOE Grant No. DE-FG02-84ER45097 and completed under NSF-MRSEC Grant No. DMR-0076097. The work at ANL was funded by the US DOE, Office of Science, Contract No. W-31-109-Eng-38. ORNL is managed by UT-Battelle, LLC, under contract DE-AC05-00OR22725 for the US Department of Energy.

PY - 2004/10/1

Y1 - 2004/10/1

N2 - Structural defect structure of indium tin oxide (ITO) was analyzed using high-resolution synchrotron x-ray diffraction, time of flight neutron powder diffraction and extended x-ray absorption fine structure. Correlation between structural results and electrical properties was made using measured electrical conductivity and thermopower. It was observed that the position of O i species in ITO samples were displaced along the direction towards the plane formed by d cations and away from the b cations. The structural results show atomic positions, cation distributions, and oxygen interstitial populations for oxidized and reduced materials.

AB - Structural defect structure of indium tin oxide (ITO) was analyzed using high-resolution synchrotron x-ray diffraction, time of flight neutron powder diffraction and extended x-ray absorption fine structure. Correlation between structural results and electrical properties was made using measured electrical conductivity and thermopower. It was observed that the position of O i species in ITO samples were displaced along the direction towards the plane formed by d cations and away from the b cations. The structural results show atomic positions, cation distributions, and oxygen interstitial populations for oxidized and reduced materials.

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SN - 0021-8979

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Defect structure studies of bulk and nano-indium-tin oxide

Abstract

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