Defect structure studies of bulk and nano-indium-tin oxide

G. B. González, T. O. Mason, J. P. Quintana, O. Warschkow, D. E. Ellis, J. H. Hwang, J. P. Hodges, J. D. Jorgensen

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Abstract

Structural defect structure of indium tin oxide (ITO) was analyzed using high-resolution synchrotron x-ray diffraction, time of flight neutron powder diffraction and extended x-ray absorption fine structure. Correlation between structural results and electrical properties was made using measured electrical conductivity and thermopower. It was observed that the position of O i species in ITO samples were displaced along the direction towards the plane formed by d cations and away from the b cations. The structural results show atomic positions, cation distributions, and oxygen interstitial populations for oxidized and reduced materials.

Original languageEnglish
Pages (from-to)3912-3920
Number of pages9
JournalJournal of Applied Physics
Volume96
Issue number7
DOIs
Publication statusPublished - Oct 1 2004

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    González, G. B., Mason, T. O., Quintana, J. P., Warschkow, O., Ellis, D. E., Hwang, J. H., Hodges, J. P., & Jorgensen, J. D. (2004). Defect structure studies of bulk and nano-indium-tin oxide. Journal of Applied Physics, 96(7), 3912-3920. https://doi.org/10.1063/1.1783610