Defect structure studies of bulk and nano-indium-tin oxide

G. B. González, Thomas O Mason, J. P. Quintana, O. Warschkow, D. E. Ellis, J. H. Hwang, J. P. Hodges, J. D. Jorgensen

Research output: Contribution to journalArticle

142 Citations (Scopus)

Abstract

Structural defect structure of indium tin oxide (ITO) was analyzed using high-resolution synchrotron x-ray diffraction, time of flight neutron powder diffraction and extended x-ray absorption fine structure. Correlation between structural results and electrical properties was made using measured electrical conductivity and thermopower. It was observed that the position of O i species in ITO samples were displaced along the direction towards the plane formed by d cations and away from the b cations. The structural results show atomic positions, cation distributions, and oxygen interstitial populations for oxidized and reduced materials.

Original languageEnglish
Pages (from-to)3912-3920
Number of pages9
JournalJournal of Applied Physics
Volume96
Issue number7
DOIs
Publication statusPublished - Oct 1 2004

Fingerprint

indium oxides
tin oxides
cations
defects
x ray absorption
interstitials
synchrotrons
x ray diffraction
fine structure
electrical properties
neutrons
electrical resistivity
high resolution
oxygen
diffraction

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

González, G. B., Mason, T. O., Quintana, J. P., Warschkow, O., Ellis, D. E., Hwang, J. H., ... Jorgensen, J. D. (2004). Defect structure studies of bulk and nano-indium-tin oxide. Journal of Applied Physics, 96(7), 3912-3920. https://doi.org/10.1063/1.1783610

Defect structure studies of bulk and nano-indium-tin oxide. / González, G. B.; Mason, Thomas O; Quintana, J. P.; Warschkow, O.; Ellis, D. E.; Hwang, J. H.; Hodges, J. P.; Jorgensen, J. D.

In: Journal of Applied Physics, Vol. 96, No. 7, 01.10.2004, p. 3912-3920.

Research output: Contribution to journalArticle

González, GB, Mason, TO, Quintana, JP, Warschkow, O, Ellis, DE, Hwang, JH, Hodges, JP & Jorgensen, JD 2004, 'Defect structure studies of bulk and nano-indium-tin oxide', Journal of Applied Physics, vol. 96, no. 7, pp. 3912-3920. https://doi.org/10.1063/1.1783610
González GB, Mason TO, Quintana JP, Warschkow O, Ellis DE, Hwang JH et al. Defect structure studies of bulk and nano-indium-tin oxide. Journal of Applied Physics. 2004 Oct 1;96(7):3912-3920. https://doi.org/10.1063/1.1783610
González, G. B. ; Mason, Thomas O ; Quintana, J. P. ; Warschkow, O. ; Ellis, D. E. ; Hwang, J. H. ; Hodges, J. P. ; Jorgensen, J. D. / Defect structure studies of bulk and nano-indium-tin oxide. In: Journal of Applied Physics. 2004 ; Vol. 96, No. 7. pp. 3912-3920.
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