Abstract
Structural defect structure of indium tin oxide (ITO) was analyzed using high-resolution synchrotron x-ray diffraction, time of flight neutron powder diffraction and extended x-ray absorption fine structure. Correlation between structural results and electrical properties was made using measured electrical conductivity and thermopower. It was observed that the position of O i species in ITO samples were displaced along the direction towards the plane formed by d cations and away from the b cations. The structural results show atomic positions, cation distributions, and oxygen interstitial populations for oxidized and reduced materials.
| Original language | English |
|---|---|
| Pages (from-to) | 3912-3920 |
| Number of pages | 9 |
| Journal | Journal of Applied Physics |
| Volume | 96 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - Oct 1 2004 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)
Cite this
Defect structure studies of bulk and nano-indium-tin oxide. / González, G. B.; Mason, Thomas O; Quintana, J. P.; Warschkow, O.; Ellis, D. E.; Hwang, J. H.; Hodges, J. P.; Jorgensen, J. D.
In: Journal of Applied Physics, Vol. 96, No. 7, 01.10.2004, p. 3912-3920.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Defect structure studies of bulk and nano-indium-tin oxide
AU - González, G. B.
AU - Mason, Thomas O
AU - Quintana, J. P.
AU - Warschkow, O.
AU - Ellis, D. E.
AU - Hwang, J. H.
AU - Hodges, J. P.
AU - Jorgensen, J. D.
PY - 2004/10/1
Y1 - 2004/10/1
N2 - Structural defect structure of indium tin oxide (ITO) was analyzed using high-resolution synchrotron x-ray diffraction, time of flight neutron powder diffraction and extended x-ray absorption fine structure. Correlation between structural results and electrical properties was made using measured electrical conductivity and thermopower. It was observed that the position of O i species in ITO samples were displaced along the direction towards the plane formed by d cations and away from the b cations. The structural results show atomic positions, cation distributions, and oxygen interstitial populations for oxidized and reduced materials.
AB - Structural defect structure of indium tin oxide (ITO) was analyzed using high-resolution synchrotron x-ray diffraction, time of flight neutron powder diffraction and extended x-ray absorption fine structure. Correlation between structural results and electrical properties was made using measured electrical conductivity and thermopower. It was observed that the position of O i species in ITO samples were displaced along the direction towards the plane formed by d cations and away from the b cations. The structural results show atomic positions, cation distributions, and oxygen interstitial populations for oxidized and reduced materials.
UR - http://www.scopus.com/inward/record.url?scp=7044265101&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=7044265101&partnerID=8YFLogxK
U2 - 10.1063/1.1783610
DO - 10.1063/1.1783610
M3 - Article
AN - SCOPUS:7044265101
VL - 96
SP - 3912
EP - 3920
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 7
ER -