Defects in CMOS gate dielectrics

Eric Garfunkel, Jacob Gavartin, Gennadi Bersuker

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

The electrical and optical behavior of semiconducting devices is often dominated by the quantity, energy, and physical location of defects. Five decades of research on Si-based devices have led to a reasonable (although not definitive) consensus concerning the nature of defects in complementary metal-oxide semiconductor (CMOS) gate stack dielectrics [1–3]. This understanding has resulted from a continuous interplay between theoretical computation of model structures and experimental measurements of films and devices using a variety of methods. Some of the defects involve changes in local structure or stoichiometry. For example, a slight excess of Si atoms in an otherwise perfect SiO2film will result in the appearance of Si–Si bonds. These bonds result in electronic states in the SiO2band gap that can become charged under certain conditions. Other defects involve dangling bonds, either at the Si=SiO2interface or in the bulk of the SiO2film. A third class of defect involves changes in local coordination (Si becoming three- or fivefold coordinated, or O becoming threefold coordinated). Yet another class involves impurity atoms in the film, hydrogen being predominant. Although most impurities degrade device performance, hydrogen can also improve device properties when present at appropriate concentrations and in the appropriate location (usually by bonding with uncoordinated=dangling bonds). The role of nitrogen incorporation into these films as industry has moved from SiO2to SiON dielectrics has been extensively studied [2]. Finally, the role of radiation damage in dielectrics has also received much attention over the past few decades, especially for space and some military applications.

Original languageEnglish
Title of host publicationDefects in Microelectronic Materials and Devices
PublisherCRC Press
Pages341-358
Number of pages18
ISBN (Electronic)9781420043778
ISBN (Print)9781420043761
Publication statusPublished - Jan 1 2008

Fingerprint

Gate dielectrics
CMOS
Metals
Defects
defects
Dangling bonds
Hydrogen
Impurities
impurities
Atoms
Military applications
Radiation damage
Electronic states
hydrogen
Model structures
radiation damage
Stoichiometry
atoms
stoichiometry
Nitrogen

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Garfunkel, E., Gavartin, J., & Bersuker, G. (2008). Defects in CMOS gate dielectrics. In Defects in Microelectronic Materials and Devices (pp. 341-358). CRC Press.

Defects in CMOS gate dielectrics. / Garfunkel, Eric; Gavartin, Jacob; Bersuker, Gennadi.

Defects in Microelectronic Materials and Devices. CRC Press, 2008. p. 341-358.

Research output: Chapter in Book/Report/Conference proceedingChapter

Garfunkel, E, Gavartin, J & Bersuker, G 2008, Defects in CMOS gate dielectrics. in Defects in Microelectronic Materials and Devices. CRC Press, pp. 341-358.
Garfunkel E, Gavartin J, Bersuker G. Defects in CMOS gate dielectrics. In Defects in Microelectronic Materials and Devices. CRC Press. 2008. p. 341-358
Garfunkel, Eric ; Gavartin, Jacob ; Bersuker, Gennadi. / Defects in CMOS gate dielectrics. Defects in Microelectronic Materials and Devices. CRC Press, 2008. pp. 341-358
@inbook{91dcae4ca4bf47019bc20052b1b942b5,
title = "Defects in CMOS gate dielectrics",
abstract = "The electrical and optical behavior of semiconducting devices is often dominated by the quantity, energy, and physical location of defects. Five decades of research on Si-based devices have led to a reasonable (although not definitive) consensus concerning the nature of defects in complementary metal-oxide semiconductor (CMOS) gate stack dielectrics [1–3]. This understanding has resulted from a continuous interplay between theoretical computation of model structures and experimental measurements of films and devices using a variety of methods. Some of the defects involve changes in local structure or stoichiometry. For example, a slight excess of Si atoms in an otherwise perfect SiO2film will result in the appearance of Si–Si bonds. These bonds result in electronic states in the SiO2band gap that can become charged under certain conditions. Other defects involve dangling bonds, either at the Si=SiO2interface or in the bulk of the SiO2film. A third class of defect involves changes in local coordination (Si becoming three- or fivefold coordinated, or O becoming threefold coordinated). Yet another class involves impurity atoms in the film, hydrogen being predominant. Although most impurities degrade device performance, hydrogen can also improve device properties when present at appropriate concentrations and in the appropriate location (usually by bonding with uncoordinated=dangling bonds). The role of nitrogen incorporation into these films as industry has moved from SiO2to SiON dielectrics has been extensively studied [2]. Finally, the role of radiation damage in dielectrics has also received much attention over the past few decades, especially for space and some military applications.",
author = "Eric Garfunkel and Jacob Gavartin and Gennadi Bersuker",
year = "2008",
month = "1",
day = "1",
language = "English",
isbn = "9781420043761",
pages = "341--358",
booktitle = "Defects in Microelectronic Materials and Devices",
publisher = "CRC Press",

}

TY - CHAP

T1 - Defects in CMOS gate dielectrics

AU - Garfunkel, Eric

AU - Gavartin, Jacob

AU - Bersuker, Gennadi

PY - 2008/1/1

Y1 - 2008/1/1

N2 - The electrical and optical behavior of semiconducting devices is often dominated by the quantity, energy, and physical location of defects. Five decades of research on Si-based devices have led to a reasonable (although not definitive) consensus concerning the nature of defects in complementary metal-oxide semiconductor (CMOS) gate stack dielectrics [1–3]. This understanding has resulted from a continuous interplay between theoretical computation of model structures and experimental measurements of films and devices using a variety of methods. Some of the defects involve changes in local structure or stoichiometry. For example, a slight excess of Si atoms in an otherwise perfect SiO2film will result in the appearance of Si–Si bonds. These bonds result in electronic states in the SiO2band gap that can become charged under certain conditions. Other defects involve dangling bonds, either at the Si=SiO2interface or in the bulk of the SiO2film. A third class of defect involves changes in local coordination (Si becoming three- or fivefold coordinated, or O becoming threefold coordinated). Yet another class involves impurity atoms in the film, hydrogen being predominant. Although most impurities degrade device performance, hydrogen can also improve device properties when present at appropriate concentrations and in the appropriate location (usually by bonding with uncoordinated=dangling bonds). The role of nitrogen incorporation into these films as industry has moved from SiO2to SiON dielectrics has been extensively studied [2]. Finally, the role of radiation damage in dielectrics has also received much attention over the past few decades, especially for space and some military applications.

AB - The electrical and optical behavior of semiconducting devices is often dominated by the quantity, energy, and physical location of defects. Five decades of research on Si-based devices have led to a reasonable (although not definitive) consensus concerning the nature of defects in complementary metal-oxide semiconductor (CMOS) gate stack dielectrics [1–3]. This understanding has resulted from a continuous interplay between theoretical computation of model structures and experimental measurements of films and devices using a variety of methods. Some of the defects involve changes in local structure or stoichiometry. For example, a slight excess of Si atoms in an otherwise perfect SiO2film will result in the appearance of Si–Si bonds. These bonds result in electronic states in the SiO2band gap that can become charged under certain conditions. Other defects involve dangling bonds, either at the Si=SiO2interface or in the bulk of the SiO2film. A third class of defect involves changes in local coordination (Si becoming three- or fivefold coordinated, or O becoming threefold coordinated). Yet another class involves impurity atoms in the film, hydrogen being predominant. Although most impurities degrade device performance, hydrogen can also improve device properties when present at appropriate concentrations and in the appropriate location (usually by bonding with uncoordinated=dangling bonds). The role of nitrogen incorporation into these films as industry has moved from SiO2to SiON dielectrics has been extensively studied [2]. Finally, the role of radiation damage in dielectrics has also received much attention over the past few decades, especially for space and some military applications.

UR - http://www.scopus.com/inward/record.url?scp=85056966368&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85056966368&partnerID=8YFLogxK

M3 - Chapter

SN - 9781420043761

SP - 341

EP - 358

BT - Defects in Microelectronic Materials and Devices

PB - CRC Press

ER -