Deposition and properties of yttria-stabilized zirconia thin films using reactive direct current magnetron sputtering

E. S. Thiele, L. S. Wang, Thomas O Mason, S. A. Barnett

Research output: Contribution to journalArticle

65 Citations (Scopus)

Abstract

Yttria-stabilized zirconia (YSZ) thin films were deposited by reactive magnetron sputter deposition from a composite Zr-Y target in Ar-O2 mixtures. Hysteresis was observed as a function of oxygen flow rate f. For a discharge current of 0.4 A and a total pressure P of 5 mTorr, for example, the target oxidized at f > 2.3 ml/min, with the reverse transition from an oxidized to a metallic target surface occurring at 1.95 ml/min. The deposition rate was 2.7 um/h in the metallicmodeandO.l,um/h in the oxide mode. Fully oxidized (Y2O3)0.1 (ZrO2)0.9 was obtained for f > 2.0 ml/min, even in the metallic mode. While films deposited with P = 3−20 mTorr were continuous, for P > 20 mTorr crazing was apparent as expected for a ceramic film in a tensile stress state. For P <3 mTorr, the films delaminated due to excessive compressive stress. X-ray diffraction and electron microscopy results showed that the films were polycrystalline cubic YSZ with a columnar structure and an average grain diameter of 15 nm. Fully dense films were obtained at a deposition temperature of 350°C. Temperature-dependent impedance spectroscopy analysis ofYSZ films with Ag electrodes showed that the oxygen ion conductivity was as expected for YSZ.

Original languageEnglish
Pages (from-to)3054-3060
Number of pages7
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume9
Issue number6
DOIs
Publication statusPublished - 1991

Fingerprint

Yttria stabilized zirconia
yttria-stabilized zirconia
Magnetron sputtering
magnetron sputtering
direct current
Thin films
thin films
Oxygen
Crazing
Sputter deposition
surface cracks
oxygen ions
Deposition rates
tensile stress
Compressive stress
Tensile stress
Oxides
Electron microscopy
Hysteresis
electron microscopy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Deposition and properties of yttria-stabilized zirconia thin films using reactive direct current magnetron sputtering. / Thiele, E. S.; Wang, L. S.; Mason, Thomas O; Barnett, S. A.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 9, No. 6, 1991, p. 3054-3060.

Research output: Contribution to journalArticle

@article{e26ef6d0cda14629a8273b7d505ab1cc,
title = "Deposition and properties of yttria-stabilized zirconia thin films using reactive direct current magnetron sputtering",
abstract = "Yttria-stabilized zirconia (YSZ) thin films were deposited by reactive magnetron sputter deposition from a composite Zr-Y target in Ar-O2 mixtures. Hysteresis was observed as a function of oxygen flow rate f. For a discharge current of 0.4 A and a total pressure P of 5 mTorr, for example, the target oxidized at f > 2.3 ml/min, with the reverse transition from an oxidized to a metallic target surface occurring at 1.95 ml/min. The deposition rate was 2.7 um/h in the metallicmodeandO.l,um/h in the oxide mode. Fully oxidized (Y2O3)0.1 (ZrO2)0.9 was obtained for f > 2.0 ml/min, even in the metallic mode. While films deposited with P = 3−20 mTorr were continuous, for P > 20 mTorr crazing was apparent as expected for a ceramic film in a tensile stress state. For P <3 mTorr, the films delaminated due to excessive compressive stress. X-ray diffraction and electron microscopy results showed that the films were polycrystalline cubic YSZ with a columnar structure and an average grain diameter of 15 nm. Fully dense films were obtained at a deposition temperature of 350°C. Temperature-dependent impedance spectroscopy analysis ofYSZ films with Ag electrodes showed that the oxygen ion conductivity was as expected for YSZ.",
author = "Thiele, {E. S.} and Wang, {L. S.} and Mason, {Thomas O} and Barnett, {S. A.}",
year = "1991",
doi = "10.1116/1.577172",
language = "English",
volume = "9",
pages = "3054--3060",
journal = "Journal of Vacuum Science and Technology A",
issn = "0734-2101",
publisher = "AVS Science and Technology Society",
number = "6",

}

TY - JOUR

T1 - Deposition and properties of yttria-stabilized zirconia thin films using reactive direct current magnetron sputtering

AU - Thiele, E. S.

AU - Wang, L. S.

AU - Mason, Thomas O

AU - Barnett, S. A.

PY - 1991

Y1 - 1991

N2 - Yttria-stabilized zirconia (YSZ) thin films were deposited by reactive magnetron sputter deposition from a composite Zr-Y target in Ar-O2 mixtures. Hysteresis was observed as a function of oxygen flow rate f. For a discharge current of 0.4 A and a total pressure P of 5 mTorr, for example, the target oxidized at f > 2.3 ml/min, with the reverse transition from an oxidized to a metallic target surface occurring at 1.95 ml/min. The deposition rate was 2.7 um/h in the metallicmodeandO.l,um/h in the oxide mode. Fully oxidized (Y2O3)0.1 (ZrO2)0.9 was obtained for f > 2.0 ml/min, even in the metallic mode. While films deposited with P = 3−20 mTorr were continuous, for P > 20 mTorr crazing was apparent as expected for a ceramic film in a tensile stress state. For P <3 mTorr, the films delaminated due to excessive compressive stress. X-ray diffraction and electron microscopy results showed that the films were polycrystalline cubic YSZ with a columnar structure and an average grain diameter of 15 nm. Fully dense films were obtained at a deposition temperature of 350°C. Temperature-dependent impedance spectroscopy analysis ofYSZ films with Ag electrodes showed that the oxygen ion conductivity was as expected for YSZ.

AB - Yttria-stabilized zirconia (YSZ) thin films were deposited by reactive magnetron sputter deposition from a composite Zr-Y target in Ar-O2 mixtures. Hysteresis was observed as a function of oxygen flow rate f. For a discharge current of 0.4 A and a total pressure P of 5 mTorr, for example, the target oxidized at f > 2.3 ml/min, with the reverse transition from an oxidized to a metallic target surface occurring at 1.95 ml/min. The deposition rate was 2.7 um/h in the metallicmodeandO.l,um/h in the oxide mode. Fully oxidized (Y2O3)0.1 (ZrO2)0.9 was obtained for f > 2.0 ml/min, even in the metallic mode. While films deposited with P = 3−20 mTorr were continuous, for P > 20 mTorr crazing was apparent as expected for a ceramic film in a tensile stress state. For P <3 mTorr, the films delaminated due to excessive compressive stress. X-ray diffraction and electron microscopy results showed that the films were polycrystalline cubic YSZ with a columnar structure and an average grain diameter of 15 nm. Fully dense films were obtained at a deposition temperature of 350°C. Temperature-dependent impedance spectroscopy analysis ofYSZ films with Ag electrodes showed that the oxygen ion conductivity was as expected for YSZ.

UR - http://www.scopus.com/inward/record.url?scp=84957224343&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84957224343&partnerID=8YFLogxK

U2 - 10.1116/1.577172

DO - 10.1116/1.577172

M3 - Article

AN - SCOPUS:84957224343

VL - 9

SP - 3054

EP - 3060

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

SN - 0734-2101

IS - 6

ER -