Depth-dependent defect analysis in RBS/channeling

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Rutherford backscattering combined with channeling is used as a measure of the crystalline quality of thin films. For lattice mismatched structures the channeling spectrum implicitly contains the quantitative depth distribution of dislocation defects through a deconvolution analysis that takes into account the rate of dechanneling with depth. We describe a sputtering/depth profiling procedure to extract the defect density which tests this deconvolution procedure. It is shown that the analysis can severely underestimate the defect density at large depths. We show, by further analysis, that this discrepancy can be resolved when energy loss straggling is taken into account. The sputtering/defect profiling procedure is applied to the important system of GaAs grown onto Si.

Original languageEnglish
Pages (from-to)417-419
Number of pages3
JournalNuclear Inst. and Methods in Physics Research, B
Volume45
Issue number1-4
DOIs
Publication statusPublished - Jan 2 1990

Fingerprint

Defect density
Deconvolution
Sputtering
Defects
Depth profiling
defects
Rutherford backscattering spectroscopy
Crystal lattices
Energy dissipation
sputtering
Crystalline materials
Thin films
backscattering
energy dissipation
thin films
gallium arsenide

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Depth-dependent defect analysis in RBS/channeling. / Savin, W.; Feldman, Leonard C.

In: Nuclear Inst. and Methods in Physics Research, B, Vol. 45, No. 1-4, 02.01.1990, p. 417-419.

Research output: Contribution to journalArticle

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