Abstract
Rutherford backscattering combined with channeling is used as a measure of the crystalline quality of thin films. For lattice mismatched structures the channeling spectrum implicitly contains the quantitative depth distribution of dislocation defects through a deconvolution analysis that takes into account the rate of dechanneling with depth. We describe a sputtering/depth profiling procedure to extract the defect density which tests this deconvolution procedure. It is shown that the analysis can severely underestimate the defect density at large depths. We show, by further analysis, that this discrepancy can be resolved when energy loss straggling is taken into account. The sputtering/defect profiling procedure is applied to the important system of GaAs grown onto Si.
| Original language | English |
|---|---|
| Pages (from-to) | 417-419 |
| Number of pages | 3 |
| Journal | Nuclear Inst. and Methods in Physics Research, B |
| Volume | 45 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - Jan 2 1990 |
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ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Instrumentation
- Surfaces and Interfaces
Cite this
Depth-dependent defect analysis in RBS/channeling. / Savin, W.; Feldman, Leonard C.
In: Nuclear Inst. and Methods in Physics Research, B, Vol. 45, No. 1-4, 02.01.1990, p. 417-419.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Depth-dependent defect analysis in RBS/channeling
AU - Savin, W.
AU - Feldman, Leonard C
PY - 1990/1/2
Y1 - 1990/1/2
N2 - Rutherford backscattering combined with channeling is used as a measure of the crystalline quality of thin films. For lattice mismatched structures the channeling spectrum implicitly contains the quantitative depth distribution of dislocation defects through a deconvolution analysis that takes into account the rate of dechanneling with depth. We describe a sputtering/depth profiling procedure to extract the defect density which tests this deconvolution procedure. It is shown that the analysis can severely underestimate the defect density at large depths. We show, by further analysis, that this discrepancy can be resolved when energy loss straggling is taken into account. The sputtering/defect profiling procedure is applied to the important system of GaAs grown onto Si.
AB - Rutherford backscattering combined with channeling is used as a measure of the crystalline quality of thin films. For lattice mismatched structures the channeling spectrum implicitly contains the quantitative depth distribution of dislocation defects through a deconvolution analysis that takes into account the rate of dechanneling with depth. We describe a sputtering/depth profiling procedure to extract the defect density which tests this deconvolution procedure. It is shown that the analysis can severely underestimate the defect density at large depths. We show, by further analysis, that this discrepancy can be resolved when energy loss straggling is taken into account. The sputtering/defect profiling procedure is applied to the important system of GaAs grown onto Si.
UR - http://www.scopus.com/inward/record.url?scp=0025235684&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0025235684&partnerID=8YFLogxK
U2 - 10.1016/0168-583X(90)90865-R
DO - 10.1016/0168-583X(90)90865-R
M3 - Article
AN - SCOPUS:0025235684
VL - 45
SP - 417
EP - 419
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
IS - 1-4
ER -