Depth dependent modification of optical constants arising from H+ implantation in n-type 4H-SiC measured using coherent acoustic phonons

Andrey Baydin, Halina Krzyzanowska, Munthala Dhanunjaya, S. V.S. Nageswara Rao, Jimmy L. Davidson, Leonard C. Feldman, Norman H. Tolk

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

Silicon carbide (SiC) is a promising material for new generation electronics including high power/high temperature devices and advanced optical applications such as room temperature spintronics and quantum computing. Both types of applications require the control of defects particularly those created by ion bombardment. In this work, modification of optical constants of 4H-SiC due to hydrogen implantation at 180 keV and at fluences ranging from 1014 to 1016 cm-2 is reported. The depth dependence of the modified optical constants was extracted from coherent acoustic phonon spectra. Implanted spectra show a strong dependence of the 4H-SiC complex refractive index depth profile on H+ fluence. These studies provide basic insight into the dependence of optical properties of 4H silicon carbide on defect densities created by ion implantation, which is of relevance to the fabrication of SiC-based photonic and optoelectronic devices.

Original languageEnglish
Article number036102
JournalAPL Photonics
Volume1
Issue number3
DOIs
Publication statusPublished - Jun 1 2016

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Computer Networks and Communications

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