Abstract
Ion-beam-analyses (IBA) on a boron doped plasma-deuterated single crystal diamond are reported. Such samples have been reported to show an as-yet unexplained (Nature Materials 2, 482 (2003)) conversion from p-type (when as grown-B doped) to n-type (when deuterated). The present results yield information on the degree of crystallinity and on the lattice location of the B and D in the sample. They show that the diamond epitaxy is good, that the location of the B (even after deuteration) is mostly substitutional. However, the deuterium is not aligned along the <100> crystallographic axis. The absolute concentrations of B and D indicate that the n-type conductivity is associated with a B-Dn complex with n ≥ 2, in agreement with earlier experiments and some theoretical models. A surface damage layer of about 2 nm following the plasma exposure is also reported.
Original language | English |
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Pages (from-to) | 1600-1604 |
Number of pages | 5 |
Journal | Diamond and Related Materials |
Volume | 14 |
Issue number | 10 |
DOIs | |
Publication status | Published - Oct 1 2005 |
Keywords
- Deuterium (hydrogen) in diamond
- Lattice location
- N-type diamond
- Nuclear reaction analysis
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Chemistry(all)
- Mechanical Engineering
- Materials Chemistry
- Electrical and Electronic Engineering