Semiconductor/liquid junctions have been investigated in nonaqueous solvents with outer sphere redox couples. Systematic variation in semiconductor composition in the n-GaAs//1// minus //x P//x anode series is correlated with changes in interface properties. Inefficiencies at n-GaAs anodes in CH//3CN solvent are ascribed to poor bulk transport properties, and use of crystals with sufficient minority carrier collection lengths are shown to improve the photocurrent-voltage behavior for the n-GaAs/ Fc/ Fc** plus / CH//3CN interface. n-Si anodes in CH//3OH solvent are shown to yield AM2 conversion efficiencies of incident light to electricity of 9. 5 plus or minus 0. 5% with outer sphere redox systems as electroactive species. Extension to other semiconductor substrates and the implication for rational design and study of semiconductor/liquid interfaces is discussed in detail.
|Title of host publication||Proceedings - The Electrochemical Society|
|Publisher||Electrochemical Soc Inc|
|Number of pages||20|
|Publication status||Published - 1984|
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