DESIGN OF EFFICIENT SEMICONDUCTOR/LIQUID JUNCTION INTERFACES IN NONAQUEOUS SOLVENTS.

Nathan S Lewis, Raul Dominguez, Chris M. Gronet, Charles M. Lieber, Mark D. Rosenblum, George W. Cogan, James F. Gibbons, Garret R. Moddel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Semiconductor/liquid junctions have been investigated in nonaqueous solvents with outer sphere redox couples. Systematic variation in semiconductor composition in the n-GaAs//1// minus //x P//x anode series is correlated with changes in interface properties. Inefficiencies at n-GaAs anodes in CH//3CN solvent are ascribed to poor bulk transport properties, and use of crystals with sufficient minority carrier collection lengths are shown to improve the photocurrent-voltage behavior for the n-GaAs/ Fc/ Fc** plus / CH//3CN interface. n-Si anodes in CH//3OH solvent are shown to yield AM2 conversion efficiencies of incident light to electricity of 9. 5 plus or minus 0. 5% with outer sphere redox systems as electroactive species. Extension to other semiconductor substrates and the implication for rational design and study of semiconductor/liquid interfaces is discussed in detail.

Original languageEnglish
Title of host publicationProceedings - The Electrochemical Society
PublisherElectrochemical Soc Inc
Pages460-479
Number of pages20
Volume84-12
Publication statusPublished - 1984

ASJC Scopus subject areas

  • Engineering(all)

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    Lewis, N. S., Dominguez, R., Gronet, C. M., Lieber, C. M., Rosenblum, M. D., Cogan, G. W., Gibbons, J. F., & Moddel, G. R. (1984). DESIGN OF EFFICIENT SEMICONDUCTOR/LIQUID JUNCTION INTERFACES IN NONAQUEOUS SOLVENTS. In Proceedings - The Electrochemical Society (Vol. 84-12, pp. 460-479). Electrochemical Soc Inc.