Design of Metastable Tin Titanium Nitride Semiconductor Alloys

Andre Bikowski, Sebastian Siol, Jing Gu, Aaron Holder, John S. Mangum, Brian Gorman, William Tumas, Stephan Lany, Andriy Zakutayev

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We report on design of optoelectronic properties in previously unreported metastable tin titanium nitride alloys with spinel crystal structure. Theoretical calculations predict that Ti alloying in metastable Sn3N4 compound should improve hole effective mass by up to 1 order of magnitude, while other optical bandgaps remains in the 1-2 eV range up to x ∼ 0.35 Ti composition. Experimental synthesis of these metastable alloys is predicted to be challenging due to high required nitrogen chemical potential (ΔμN ≥ +1.0 eV) but proven to be possible using combinatorial cosputtering from metal targets in the presence of nitrogen plasma. Characterization experiments confirm that thin films of such (Sn1-xTix)3N4 alloys can be synthesized up to x = 0.45 composition, with suitable optical band gaps (1.5-2.0 eV), moderate electron densities (1017 to 1018 cm-3), and improved photogenerated hole transport (by 5×). Overall, this study shows that it is possible to design the metastable nitride materials with properties suitable for potential use in solar energy conversion applications.

Original languageEnglish
Pages (from-to)6511-6517
Number of pages7
JournalChemistry of Materials
Volume29
Issue number15
DOIs
Publication statusPublished - Aug 8 2017

Fingerprint

Titanium nitride
Tin
Optical band gaps
Semiconductor materials
Nitrogen plasma
Chemical potential
Chemical analysis
Energy conversion
Alloying
Nitrides
Optoelectronic devices
Solar energy
Carrier concentration
Nitrogen
Crystal structure
Metals
Thin films
titanium nitride
Experiments

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

Cite this

Bikowski, A., Siol, S., Gu, J., Holder, A., Mangum, J. S., Gorman, B., ... Zakutayev, A. (2017). Design of Metastable Tin Titanium Nitride Semiconductor Alloys. Chemistry of Materials, 29(15), 6511-6517. https://doi.org/10.1021/acs.chemmater.7b02122

Design of Metastable Tin Titanium Nitride Semiconductor Alloys. / Bikowski, Andre; Siol, Sebastian; Gu, Jing; Holder, Aaron; Mangum, John S.; Gorman, Brian; Tumas, William; Lany, Stephan; Zakutayev, Andriy.

In: Chemistry of Materials, Vol. 29, No. 15, 08.08.2017, p. 6511-6517.

Research output: Contribution to journalArticle

Bikowski, A, Siol, S, Gu, J, Holder, A, Mangum, JS, Gorman, B, Tumas, W, Lany, S & Zakutayev, A 2017, 'Design of Metastable Tin Titanium Nitride Semiconductor Alloys', Chemistry of Materials, vol. 29, no. 15, pp. 6511-6517. https://doi.org/10.1021/acs.chemmater.7b02122
Bikowski A, Siol S, Gu J, Holder A, Mangum JS, Gorman B et al. Design of Metastable Tin Titanium Nitride Semiconductor Alloys. Chemistry of Materials. 2017 Aug 8;29(15):6511-6517. https://doi.org/10.1021/acs.chemmater.7b02122
Bikowski, Andre ; Siol, Sebastian ; Gu, Jing ; Holder, Aaron ; Mangum, John S. ; Gorman, Brian ; Tumas, William ; Lany, Stephan ; Zakutayev, Andriy. / Design of Metastable Tin Titanium Nitride Semiconductor Alloys. In: Chemistry of Materials. 2017 ; Vol. 29, No. 15. pp. 6511-6517.
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