Designing Principles of Molecular Quantum Interference Effect Transistors

Shuguang Chen, Guanhua Chen, Mark A Ratner

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

To explore the designing principles for the quantum interference effect transistors, a series of simulations are carried out on a 2,5-linked perylene molecular junction composed of two subsystems connected via destructive quantum interference. Simulation results suggest that the overall conductance of a large π-conjugated system is determined by its subsystem connected directly to the electrodes. A Büttiker probe can be treated as a resistor, and to first-order approximation, its effect is found equivalent to severing its surrounding bonds. These findings greatly simplify the design of molecular quantum interference effect transistors.

Original languageEnglish
Pages (from-to)2843-2847
Number of pages5
JournalJournal of Physical Chemistry Letters
Volume9
Issue number11
DOIs
Publication statusPublished - Jun 7 2018

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Transistors
transistors
Perylene
interference
Resistors
resistors
Electrodes
simulation
electrodes
probes
approximation

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Designing Principles of Molecular Quantum Interference Effect Transistors. / Chen, Shuguang; Chen, Guanhua; Ratner, Mark A.

In: Journal of Physical Chemistry Letters, Vol. 9, No. 11, 07.06.2018, p. 2843-2847.

Research output: Contribution to journalArticle

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