Detection of a piezoelectric effect in thin films of thermally grown SiO 2 via lock-in ellipsometry

Guy Lazovski, Ellen Wachtel, Igor Lubomirsky

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Abstract

We report the observation of structural piezoelectricity in partially ordered thin films of thermally grown silicon dioxide (SiO 2). The piezoelectric coefficient was determined to be 0.14-0.26 pm/V, and the piezoelectricity was found to originate in a layer with thickness at least 3.5 nm. This value is consistent with literature descriptions of SiO 2 residual ordering based on structural measurements and modeling. Our observation demonstrates that the residual ordering in thermally grown silicon SiO 2 is non-centrosymmetric and provides a rare example of diffusion controlled uniaxial growth producing macroscopic piezoelectricity.

Original languageEnglish
Article number262905
JournalApplied Physics Letters
Volume100
Issue number26
DOIs
Publication statusPublished - Jun 25 2012

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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