We report the observation of structural piezoelectricity in partially ordered thin films of thermally grown silicon dioxide (SiO 2). The piezoelectric coefficient was determined to be 0.14-0.26 pm/V, and the piezoelectricity was found to originate in a layer with thickness at least 3.5 nm. This value is consistent with literature descriptions of SiO 2 residual ordering based on structural measurements and modeling. Our observation demonstrates that the residual ordering in thermally grown silicon SiO 2 is non-centrosymmetric and provides a rare example of diffusion controlled uniaxial growth producing macroscopic piezoelectricity.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)