Detection of a piezoelectric effect in thin films of thermally grown SiO 2 via lock-in ellipsometry

Guy Lazovski, Ellen Wachtel, Igor Lubomirsky

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We report the observation of structural piezoelectricity in partially ordered thin films of thermally grown silicon dioxide (SiO 2). The piezoelectric coefficient was determined to be 0.14-0.26 pm/V, and the piezoelectricity was found to originate in a layer with thickness at least 3.5 nm. This value is consistent with literature descriptions of SiO 2 residual ordering based on structural measurements and modeling. Our observation demonstrates that the residual ordering in thermally grown silicon SiO 2 is non-centrosymmetric and provides a rare example of diffusion controlled uniaxial growth producing macroscopic piezoelectricity.

Original languageEnglish
Article number262905
JournalApplied Physics Letters
Volume100
Issue number26
DOIs
Publication statusPublished - Jun 25 2012

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piezoelectricity
ellipsometry
thin films
silicon dioxide
silicon
coefficients

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Detection of a piezoelectric effect in thin films of thermally grown SiO 2 via lock-in ellipsometry. / Lazovski, Guy; Wachtel, Ellen; Lubomirsky, Igor.

In: Applied Physics Letters, Vol. 100, No. 26, 262905, 25.06.2012.

Research output: Contribution to journalArticle

@article{dd4d82cacbba4490a56d059e2c1ab244,
title = "Detection of a piezoelectric effect in thin films of thermally grown SiO 2 via lock-in ellipsometry",
abstract = "We report the observation of structural piezoelectricity in partially ordered thin films of thermally grown silicon dioxide (SiO 2). The piezoelectric coefficient was determined to be 0.14-0.26 pm/V, and the piezoelectricity was found to originate in a layer with thickness at least 3.5 nm. This value is consistent with literature descriptions of SiO 2 residual ordering based on structural measurements and modeling. Our observation demonstrates that the residual ordering in thermally grown silicon SiO 2 is non-centrosymmetric and provides a rare example of diffusion controlled uniaxial growth producing macroscopic piezoelectricity.",
author = "Guy Lazovski and Ellen Wachtel and Igor Lubomirsky",
year = "2012",
month = "6",
day = "25",
doi = "10.1063/1.4731287",
language = "English",
volume = "100",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "26",

}

TY - JOUR

T1 - Detection of a piezoelectric effect in thin films of thermally grown SiO 2 via lock-in ellipsometry

AU - Lazovski, Guy

AU - Wachtel, Ellen

AU - Lubomirsky, Igor

PY - 2012/6/25

Y1 - 2012/6/25

N2 - We report the observation of structural piezoelectricity in partially ordered thin films of thermally grown silicon dioxide (SiO 2). The piezoelectric coefficient was determined to be 0.14-0.26 pm/V, and the piezoelectricity was found to originate in a layer with thickness at least 3.5 nm. This value is consistent with literature descriptions of SiO 2 residual ordering based on structural measurements and modeling. Our observation demonstrates that the residual ordering in thermally grown silicon SiO 2 is non-centrosymmetric and provides a rare example of diffusion controlled uniaxial growth producing macroscopic piezoelectricity.

AB - We report the observation of structural piezoelectricity in partially ordered thin films of thermally grown silicon dioxide (SiO 2). The piezoelectric coefficient was determined to be 0.14-0.26 pm/V, and the piezoelectricity was found to originate in a layer with thickness at least 3.5 nm. This value is consistent with literature descriptions of SiO 2 residual ordering based on structural measurements and modeling. Our observation demonstrates that the residual ordering in thermally grown silicon SiO 2 is non-centrosymmetric and provides a rare example of diffusion controlled uniaxial growth producing macroscopic piezoelectricity.

UR - http://www.scopus.com/inward/record.url?scp=84863326465&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863326465&partnerID=8YFLogxK

U2 - 10.1063/1.4731287

DO - 10.1063/1.4731287

M3 - Article

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 26

M1 - 262905

ER -