Determination of optical damage cross-sections and volumes surrounding ion bombardment tracks in GaAs using coherent acoustic phonon spectroscopy

A. Steigerwald, A. B. Hmelo, K. Varga, Leonard C Feldman, N. Tolk

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We report the results of coherent acoustic phonon spectroscopy analysis of band-edge optical modification of GaAs irradiated with 400 keV Ne ++ for doses between 10 11-10 13 cm -2. We relate this optical modification to the structural damage density as predicted by simulation and verified by ion channeling analysis. Crystal damage is observed to cause optical modification that reduces the amplitude of the optoacoustic signal. The depth-dependent nature of the optoacoustic measurement allows us to determine optical damage cross-sections along the ion track, which are found to vary as a function of position along the track. Unexpectedly, we find that this optical modification is primarily dependent on the structural damage density and insensitive to the specific defect configuration along the ion track, suggesting that a simple model of defect density along the track is sufficient to characterize the observed optical changes. The extent of optical modification is strongly probe frequency-dependent as the frequency is detuned from the GaAs band edge. As determined from the experimental measurements, the spatial extent of optical modification exceeds the spatial extent of the structural disorder by an order of magnitude.

Original languageEnglish
Article number013514
JournalJournal of Applied Physics
Volume112
Issue number1
DOIs
Publication statusPublished - Jul 1 2012

Fingerprint

bombardment
damage
acoustics
cross sections
spectroscopy
ions
defects
disorders
dosage
probes
causes
configurations
crystals
simulation

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Determination of optical damage cross-sections and volumes surrounding ion bombardment tracks in GaAs using coherent acoustic phonon spectroscopy. / Steigerwald, A.; Hmelo, A. B.; Varga, K.; Feldman, Leonard C; Tolk, N.

In: Journal of Applied Physics, Vol. 112, No. 1, 013514, 01.07.2012.

Research output: Contribution to journalArticle

@article{1ffc56c80d834ba88898465cf3ee2b22,
title = "Determination of optical damage cross-sections and volumes surrounding ion bombardment tracks in GaAs using coherent acoustic phonon spectroscopy",
abstract = "We report the results of coherent acoustic phonon spectroscopy analysis of band-edge optical modification of GaAs irradiated with 400 keV Ne ++ for doses between 10 11-10 13 cm -2. We relate this optical modification to the structural damage density as predicted by simulation and verified by ion channeling analysis. Crystal damage is observed to cause optical modification that reduces the amplitude of the optoacoustic signal. The depth-dependent nature of the optoacoustic measurement allows us to determine optical damage cross-sections along the ion track, which are found to vary as a function of position along the track. Unexpectedly, we find that this optical modification is primarily dependent on the structural damage density and insensitive to the specific defect configuration along the ion track, suggesting that a simple model of defect density along the track is sufficient to characterize the observed optical changes. The extent of optical modification is strongly probe frequency-dependent as the frequency is detuned from the GaAs band edge. As determined from the experimental measurements, the spatial extent of optical modification exceeds the spatial extent of the structural disorder by an order of magnitude.",
author = "A. Steigerwald and Hmelo, {A. B.} and K. Varga and Feldman, {Leonard C} and N. Tolk",
year = "2012",
month = "7",
day = "1",
doi = "10.1063/1.4732072",
language = "English",
volume = "112",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "1",

}

TY - JOUR

T1 - Determination of optical damage cross-sections and volumes surrounding ion bombardment tracks in GaAs using coherent acoustic phonon spectroscopy

AU - Steigerwald, A.

AU - Hmelo, A. B.

AU - Varga, K.

AU - Feldman, Leonard C

AU - Tolk, N.

PY - 2012/7/1

Y1 - 2012/7/1

N2 - We report the results of coherent acoustic phonon spectroscopy analysis of band-edge optical modification of GaAs irradiated with 400 keV Ne ++ for doses between 10 11-10 13 cm -2. We relate this optical modification to the structural damage density as predicted by simulation and verified by ion channeling analysis. Crystal damage is observed to cause optical modification that reduces the amplitude of the optoacoustic signal. The depth-dependent nature of the optoacoustic measurement allows us to determine optical damage cross-sections along the ion track, which are found to vary as a function of position along the track. Unexpectedly, we find that this optical modification is primarily dependent on the structural damage density and insensitive to the specific defect configuration along the ion track, suggesting that a simple model of defect density along the track is sufficient to characterize the observed optical changes. The extent of optical modification is strongly probe frequency-dependent as the frequency is detuned from the GaAs band edge. As determined from the experimental measurements, the spatial extent of optical modification exceeds the spatial extent of the structural disorder by an order of magnitude.

AB - We report the results of coherent acoustic phonon spectroscopy analysis of band-edge optical modification of GaAs irradiated with 400 keV Ne ++ for doses between 10 11-10 13 cm -2. We relate this optical modification to the structural damage density as predicted by simulation and verified by ion channeling analysis. Crystal damage is observed to cause optical modification that reduces the amplitude of the optoacoustic signal. The depth-dependent nature of the optoacoustic measurement allows us to determine optical damage cross-sections along the ion track, which are found to vary as a function of position along the track. Unexpectedly, we find that this optical modification is primarily dependent on the structural damage density and insensitive to the specific defect configuration along the ion track, suggesting that a simple model of defect density along the track is sufficient to characterize the observed optical changes. The extent of optical modification is strongly probe frequency-dependent as the frequency is detuned from the GaAs band edge. As determined from the experimental measurements, the spatial extent of optical modification exceeds the spatial extent of the structural disorder by an order of magnitude.

UR - http://www.scopus.com/inward/record.url?scp=84864135184&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84864135184&partnerID=8YFLogxK

U2 - 10.1063/1.4732072

DO - 10.1063/1.4732072

M3 - Article

VL - 112

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 1

M1 - 013514

ER -