Determination of Oxygen Atomic Positions in a Ga-In-Sn-O Ceramic Using Direct Methods and Electron Diffraction

W. Sinkler, L. D. Marks, D. D. Edwards, Thomas O Mason, Kenneth R Poeppelmeier, Z. Hu, J. D. Jorgensen

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

Direct methods using dynamical transmission electron diffraction (TED) intensities is applied to the solution of (Ga,In)2SnO5. Dynamical diffraction effects in the TED data lead to an emphasis of oxygen positions in the structure. Application of direct methods to dynamical diffraction intensities represents a valuable new technique for obtaining approximate atom positions of light elements in ceramics using an experiment which is simple to perform and does not require a single crystal.

Original languageEnglish
Pages (from-to)145-149
Number of pages5
JournalJournal of Solid State Chemistry
Volume136
Issue number1
DOIs
Publication statusPublished - Feb 15 1998

Fingerprint

Electron diffraction
electron diffraction
Diffraction
ceramics
Oxygen
light elements
oxygen
diffraction
Single crystals
Atoms
single crystals
atoms
Experiments

ASJC Scopus subject areas

  • Inorganic Chemistry
  • Physical and Theoretical Chemistry
  • Materials Chemistry

Cite this

Determination of Oxygen Atomic Positions in a Ga-In-Sn-O Ceramic Using Direct Methods and Electron Diffraction. / Sinkler, W.; Marks, L. D.; Edwards, D. D.; Mason, Thomas O; Poeppelmeier, Kenneth R; Hu, Z.; Jorgensen, J. D.

In: Journal of Solid State Chemistry, Vol. 136, No. 1, 15.02.1998, p. 145-149.

Research output: Contribution to journalArticle

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