Determination of substitutional dopant and hole concentrations in Zn-diffused single-crystal InP

R. S. Williams, P. A. Barnes, Leonard C Feldman

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

Proton-induced x-ray emission combined with channeling techniques has been used to evaluate Zn-diffused InP crystals. The measurements showed that the total Zn concentration was (1.00.3)×1019/cm3 with 505% of the dopant residing on lattice sites for samples prepared by sealed-ampoule diffusion at 700°C with a P overpressure. Hall measurements yielded a hole concentration of (5.00.5)×1018/cm3, indicating that most of the substitutional Zn in InP is electrically active and not associated in neutral substitutional complexes as previously suggested. Fine precipitates observed by transmission electron microscopy are assumed to contain the nonsubstitutional Zn.

Original languageEnglish
Pages (from-to)760-762
Number of pages3
JournalApplied Physics Letters
Volume36
Issue number9
DOIs
Publication statusPublished - 1980

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ampoules
overpressure
single crystals
precipitates
transmission electron microscopy
protons
crystals
x rays

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Determination of substitutional dopant and hole concentrations in Zn-diffused single-crystal InP. / Williams, R. S.; Barnes, P. A.; Feldman, Leonard C.

In: Applied Physics Letters, Vol. 36, No. 9, 1980, p. 760-762.

Research output: Contribution to journalArticle

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